
Advances in Silicon Carbide Processing and Applications
Artech House Publishers
Published in July 2004
Book
Hardback
228 pages
978-1-58053-740-7 (ISBN)
Description
Today sensors are found in everything from consumer goods such as cars and washing machines, to specialized hi-tech equipment used in medicine, aeronautics, and defense. Silicon carbide (SiC) is the material that is revolutionizing sensor technology and driving its use in a multitude of applications. This book is a comprehensive look at this cutting-edge technology and examines the application of SiC sensors in a broad cross section of industries. Leading experts explain the latest advances in manufacturing SiC materials and devices as well as their applications. Researchers and professional engineers alike can find the solutions they need to design and develop SiC sensors. Case studies show how to use innovative SiC technology to provide practical applications and products for industry.
More details
Edition
Unabridged edition
Language
English
Place of publication
Norwood
United States
Target group
Professional and scholarly
Edition type
Unabridged edition
ISBN-13
978-1-58053-740-7 (9781580537407)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions

Stephen Saddow
Advances in Silicon Carbide Processing and Applications
E-Book
01/2003
1st Edition
Artech House
€127.99
Available for download
Persons
Stephen E. Saddow is an associate professor electrical engineering at the University of South Florida, Tampa, Florida. He earned a Ph.D. in electrical engineering at the University of Maryland, College Park and an M.S. in electrical engineering at Polytechnic University. Anant K. Agarwal is a Senior Scientist at Cree Inc., Durham, North Carolina, managing the development of SiC power devices. He received a Ph.D. degree in Electrical Engineering, in 1984, from the Lehigh University, Bethlehem, Pa and an M.S. in Electrical Engineering, in 1980, from the University of Tennessee.
Content
Silicon Carbide. High Temperature SiC-FET Chemical Gas Sensors. Silicon Carbide Technology and Power Electronics Applications. Advances in Selective Doping of SiC Via Ion Implantation. Power SiC MOSFETs. Power and RF BJTs in 4H-SiC.