Nanolithography

- Contributor contact details - Woodhead Publishing Series in Electronic and Optical Materials - Preface - 1: Optical projection lithography - Abstract - 1.1 Introduction - 1.2 Lithography technology and trends - 1.3 Fundamentals of optical lithography - 1.4 Image evaluation - 1.5 Projection lithography systems - 1.6 Wavelengths for optical lithography - 1.7 Lithography in the deep ultraviolet (UV) - 1.8 Resolution enhancement technology - 1.9 Immersion lithography - 1.10 Multiple patterning optical lithography - 1.11 Conclusion - 2: Extreme ultraviolet (EUV) lithography - Abstract - 2.1 Introduction - 2.2 EUV sources - 2.3 EUV optics - 2.4 EUV masks - 2.5 EUV resists - 2.6 EUV integration and implementation challenges - 2.7 Conclusion and future trends - 2.8 Acknowledgments - 3: Electron beam lithography - Abstract - 3.1 Introduction - 3.2 Using pixel parallelism to address the throughput bottleneck - 3.3 The tradeoff between resolution and throughput - 3.4 Distributed systems - 3.5 Ultimate lithographic resolution - 3.6 Electron-beam patterning of photomasks for optical lithography - 3.7 Conclusion - 3.8 Acknowledgements - 4: Focused ion beams for nano-machining and imaging - Abstract - 4.1 Introduction - 4.2 An adumbrated history of focused ion beams (FIBs) - 4.3 Sources of ions: a quartet of types - 4.4 Charged particle optics - 4.5 Ion-matter interactions - 4.6 Milling - 4.7 Deposition - 4.8 Imaging - 4.9 Spectroscopy - 4.10 Conclusion and future trends - 5: Masks for micro- and nanolithography - Abstract - 5.1 Introduction - 5.2 Mask materials - 5.3 Mask process - 5.4 Mask metrology - 5.5 Defects and masks - 5.6 Conclusion - 6: Maskless photolithography - Abstract - 6.1 Introduction - 6.2 The use of photons as opposed to charged particles - 6.3 Forms of maskless photolithography - 6.4 Zone-plate-array lithography (ZPAL) - 6.5 Proximity-effect correction - 6.6 Extending the resolution of ZPAL - 6.7 Commercialization of ZPAL by LumArray, Inc. - 6.8 Conclusion - 7: Chemistry and processing of resists for nanolithography - Abstract - 7.1 Introduction - 7.2 Resists for optical lithography: synthesis and radiation induced chemistry of resists as a function of exposure technology - 7.3 Chemically amplified resist process considerations - 7.4 Chemically amplified resists for 193 nm lithography - 7.5 Resists for extreme ultraviolet lithography (EUVL) - 7.6 Resists for electron beam lithography - 7.7 Resists for selected forward looking lithographic technologies - 7.8 Resist resolution limitations - 7.9 Conclusion - 8: Directed assembly nanolithography - Abstract - 8.1 Introduction - 8.2 Block copolymers in lithography - 8.3 Directed self-assembly of block copolymers - 8.4 Programmable three-dimensional lithography - 8.5 Conclusion - 9: Nanoimprint lithography - Abstract - 9.1 Introduction - 9.2 An overview of imprint lithography - 9.3 Soft lithography - 9.4 Thermal imprint lithography - 9.5 Alternative thermal imprint processes - 9.6 Ultraviolet (UV) nanoimprint lithography overview - 9.7 Jet and flash imprint lithography - 9.8 Roll to roll imprint lithography - 9.9 Defectivity - 9.10 Conclusions - 9.11 Acknowledgments - 10: Nanostructures: fabrication and applications - Abstract - 10.1 Introduction - 10.2 Characterization of nanostructures - 10.3 Methods to create nanostructures: top-down fabrication of nanostructures - 10.4 Methods to create nanostructures: bottom-up fabrication of nanostructures - 10.5 Properties of nanostructures - 10.6 Applications of nanostructures - 11: Nanophotonics: devices for manipulating light at the nanoscale - Abstract - 11.1 Introduction - 11.2 Photonic crystals - 11.3 Ring resonators - 11.4 Extraordinary optical transmission through subwavelength apertures - 11.5 Optical nanoantennas - 11.6 Plasmonic focusing - 11.7 Near-field optical microscopy - 11.8 Plasmonic waveguides - 11.9 Enhancement of nonlinear processes - 11.10 Application in photovoltaics - 11.