Nonvolatile Memory Design
Magnetic, Resistive, and Phase Change
1st Edition
Published on 19. December 2017
208 pages
978-1-4398-0746-0 (ISBN)
Description
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.
More details
Language
English
Place of publication
Baton Rouge
United States
Publishing group
Taylor & Francis Inc
Target group
College/higher education
Senior undergraduate students/graduate students in electrical engineering, VLSI, microelectronic, semiconductor and materials; engineers working with nonvolatile memory products, design house/foundry that supplies nonvolatile memory IP, or working at a microprocessor/microcontroller that has on-chip embedded (nonvolatile) memory; researchers working on nonvolatile storage devices.
Illustrations
175 s/w Abbildungen, 10 s/w Tabellen
10 Tables, black and white; 175 Illustrations, black and white
File size
17,72 MB
ISBN-13
978-1-4398-0746-0 (9781439807460)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions
Book
03/2017
1st Edition
CRC Press
€157.20
Shipment within 10-20 days
Book
12/2011
1st Edition
CRC Press
€383.30
Shipment within 15-20 days
Persons
Li, Hai ; Chen, Yiran
Content
Introduction to Semiconductor Memories. Phase Change Memory (PCM). Toggle-Mode MRAM (TM-MRAM). Spin-Torque Transfer RAM (STT -RAM). Resistive RAM (R-RAM). Memresistor. The Future of Nonvolatile Memory.
