
Nonvolatile Memory Design
Magnetic, Resistive, and Phase Change
CRC Press
1st Edition
Published on 29. March 2017
Book
Paperback/Softback
204 pages
978-1-138-07663-1 (ISBN)
Description
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.
More details
Language
English
Place of publication
London
United Kingdom
Publishing group
Taylor & Francis Ltd
Target group
College/higher education
Senior undergraduate students/graduate students in electrical engineering, VLSI, microelectronic, semiconductor and materials; engineers working with nonvolatile memory products, design house/foundry that supplies nonvolatile memory IP, or working at a microprocessor/microcontroller that has on-chip embedded (nonvolatile) memory; researchers working on nonvolatile storage devices.
Illustrations
175 s/w Abbildungen, 10 s/w Tabellen
10 Tables, black and white; 175 Illustrations, black and white
Dimensions
Height: 234 mm
Width: 156 mm
Thickness: 11 mm
Weight
319 gr
ISBN-13
978-1-138-07663-1 (9781138076631)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
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Additional editions

E-Book
12/2017
1st Edition
CRC Press
€151.99
Available for download

E-Book
12/2017
CRC Press
€151.99
Available for download

Book
12/2011
1st Edition
CRC Press
€383.30
Shipment within 15-20 days
Persons
Hai Li
Content
Introduction to Semiconductor Memories. Phase Change Memory (PCM). Toggle-Mode MRAM (TM-MRAM). Spin-Torque Transfer RAM (STT -RAM). Resistive RAM (R-RAM). Memresistor. The Future of Nonvolatile Memory.