Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
Published on 1. November 2012
Book
Paperback/Softback
XXI, 554 pages
978-3-7091-7204-9 (ISBN)
Description
Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.
More details
Series
Edition
Softcover reprint of the original 1st ed. 2004
Language
English
Place of publication
Vienna
Austria
Publishing group
Springer Wien
Target group
Professional and scholarly
Research
Illustrations
40 s/w Abbildungen
XXI, 554 p. 40 illus.
Dimensions
Height: 254 mm
Width: 178 mm
Thickness: 32 mm
Weight
1090 gr
ISBN-13
978-3-7091-7204-9 (9783709172049)
DOI
10.1007/978-3-7091-0597-9
Schweitzer Classification
Other editions
Additional editions
E-Book
12/2012
Springer
€309.23
Available for download
Book
06/2004
Springer
€320.99
Shipment within 7-9 days
Content
Fundamental Concepts.- 1.1 Silicon and Its Imperfections.- 1.2 The Electron System.- 1.3 Phenomenological and Atomistic Approaches to Diffusion.- 1.4 Thermodynamics.- 1.5 Reaction Kinetics.- 1.6 Exchange of Matter Between Phases.- 2 Intrinsic Point Defects.- 2.1 Concentration in Thermal Equilibrium.- 2.2 Diffusion of Intrinsic Point Defects.- 2.3 Self-Diffusion and Tracer Diffusion.- 2.4 Vacancies.- 2.5 Self-Interstitials.- 2.6 Frenkel Pairs.- 2.7 Bulk Recombination and Bulk Processes.- 2.8 Surface Recombination and Surface Processes.- 2.9 Initial Conditions.- 3 Impurity Diffusion in Silicon.- 3.1 Basic Mechanisms.- 3.2 Impurity-Point-Defect Pairs.- 3.3 Diffusion of Substitutional Impurities via Mobile Complexes with Intrinsic Point Defects.- 3.4 Pair-Diffusion Models.- 3.5 Frank-Turnbull Mechanism.- 3.6 Kick-Out Mechanism.- 4 Isovalent Impurities.- 4.1 Carbon.- 4.2 Germanium.- 4.3 Tin.- 5 Dopants.- 5.1 Dopant Clusters.- 5.2 Ion Pairing.- 5.3 Boron.- 5.4 Aluminum.- 5.5 Gallium.- 5.6 Indium.- 5.7 Nitrogen.- 5.8 Phosphorus.- 5.9 Arsenic.- 5.10 Antimony.- 6 Chalcogens.- 6.1 Oxygen.- 6.2 Sulfur.- 6.3 Selenium.- 6.4 Tellurium.- 7 Halogens.- 7.1 Fluorine.- 7.2 Chlorine.- 7.3 Bromine.- List of Tables.- List of Figures.