Diffusion Processes in High Technology Materials

<ul><li>Point Defects and Diffusion in Silicon and Gallium Arsenide</li><li>Diffusion and Low Temperature Deformation by Diffusional Creep of Nanocrystalline Materials</li><li>Dopant and Ion Beam Enhanced Grain Growth in Polycrystalline Silicon Films</li><li>Interface Segregation and Cohesion</li><li>Oxidation of High Technology Materials</li><li>Interstitial-Substitutional Diffusion in Group III-V and Group IV Semiconductors: The Role of Dislocations</li><li>Diffusion Barriers - For Thin Film Metallizations</li><li>Contact Metallization for GaAs - A Report on the Development of a Non-Alloyed Ohmic Contact Scheme</li><li>High Density Interconnect for Advanced VLSI Packaging</li><li>Diffusion in Metallic Thin Films</li><li>High Resolution Transmission Electron Microscopy of Grain Boundaries</li><li>Tunneling Microscopy of Surface Diffusion</li><li>Characterization of Interfacial Chemistry by Analytical Electron Microscopy</li><li>Solute Interactions in Metals</li><li>Oxygen Diffusion in High T_c-Superconductors</li><li>Tracer Diffusion of ⁶⁰Co and ⁶³Ni in Amorphous NiZr Alloy</li><li>Tracer Diffusion in Pure and Boron-Doped Ni₃Al</li><li>The Behavior of Transition Metals in Silicon during Annealing Transients</li><li>Suppression of Vacancy Diffusion during Short Range Ordering</li><li>Crystallization and Diffusion Studies in Amorphous Ni-Zr Thin Films</li><li>Compound Formation and Interfacial Instability in the Au-Cu-Sn System at Low Temperature</li></ul>