
Bias Temperature Instability for Devices and Circuits
Tibor Grasser(Editor)
Springer (Publisher)
Published on 1. October 2016
Book
Paperback/Softback
XI, 810 pages
978-1-4939-5529-9 (ISBN)
Description
This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
More details
Edition
Softcover reprint of the original 1st ed. 2014
Language
English
Place of publication
New York
United States
Target group
Professional and scholarly
Illustrations
283 s/w Abbildungen, 318 farbige Abbildungen
XI, 810 p. 601 illus., 318 illus. in color.
Dimensions
Height: 235 mm
Width: 155 mm
Thickness: 41 mm
Weight
1373 gr
ISBN-13
978-1-4939-5529-9 (9781493955299)
DOI
10.1007/978-1-4614-7909-3
Schweitzer Classification
Other editions
Additional editions

Tibor Grasser
Bias Temperature Instability for Devices and Circuits
Book
10/2013
1st Edition
Springer
€160.49
Shipment within 15-20 days
Content
Introduction.- Characterization, Experimental Challenges.- Advanced Characterization.- Characterization of Nanoscale Devices.- Statistical Properties/Variability.- Theoretical Understanding.- Possible Defects: Experimental.- Possible Defects: First Principles.- Modeling.- Technological Impact.- Silicon dioxides/SiON.- High-k oxides.- Alternative technologies.- Circuits.