
Bias Temperature Instability for Devices and Circuits
Tibor Grasser(Editor)
Springer (Publisher)
1st Edition
Published on 23. October 2013
Book
Hardback
XI, 810 pages
978-1-4614-7908-6 (ISBN)
Description
This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
More details
Language
English
Place of publication
New York
United States
Target group
Professional and scholarly
Professional/practitioner
Illustrations
283 s/w Abbildungen, 318 farbige Abbildungen
XI, 810 p. 601 illus., 318 illus. in color.
Dimensions
Height: 241 mm
Width: 160 mm
Thickness: 47 mm
Weight
1534 gr
ISBN-13
978-1-4614-7908-6 (9781461479086)
DOI
10.1007/978-1-4614-7909-3
Schweitzer Classification
Other editions
Additional editions

Tibor Grasser
Bias Temperature Instability for Devices and Circuits
Book
10/2016
Springer
€117.69
Shipment within 15-20 days

Tibor Grasser
Bias Temperature Instability for Devices and Circuits
E-Book
10/2013
1st Edition
Springer
€106.99
Available for download
Content
Introduction.- Characterization, Experimental Challenges.- Advanced Characterization.- Characterization of Nanoscale Devices.- Statistical Properties/Variability.- Theoretical Understanding.- Possible Defects: Experimental.- Possible Defects: First Principles.- Modeling.- Technological Impact.- Silicon dioxides/SiON.- High-k oxides.- Alternative technologies.- Circuits.