Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization: Volume 46
Published on 12. June 1997
Book
Hardback
316 pages
978-0-12-752146-6 (ISBN)
Description
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.
More details
Series
Language
English
Place of publication
San Diego
United States
Publishing group
Elsevier Science Publishing Co Inc
Target group
Professional and scholarly
Researchers, graduate students, and professionals dealing with semiconductors; materials scientists; electrical engineers; engineers and physicists working in microelectronics.
Dimensions
Height: 229 mm
Width: 152 mm
Weight
620 gr
ISBN-13
978-0-12-752146-6 (9780127521466)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions
E-Book
06/1997
Academic Press
€190.00
Available for download
Persons
Prof. Dr. Eicke R. Weber, Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany
Content
Optical Characterization
M Fried, T. Lohner, and J. Gyulai, Ellipsometric Analysis
A. Seas and C. Christofides, Transmission and Reflection Spectoscopy on Ion Implanted Semiconductors
A. Othonos, Photoluminescence and Raman Scattering of Ion Implanted Semiconductors: Influence of Annealing
Thermal Wave Analyses
C. Cristofides, Photomodulated Thermoreflectance Investigation of Implanted Wafers: Annealing Kinetics of Defects
U. Zammit, Photothermal Delection Spectroscopy Characterization of Ion-Implanted and Annealed Si Films
A. Mandelis, A. Budiman, and M. Vargas, Photothermal Deep Level Transient Spectroscopy of Impurities and Defects in Semiconductors
Quantum Well Structures and Compound Systems
R. Kalish and S. Charbonneau, Ion Implantation into Quantum Well Structures
A.M. Myasnikov and N.N. Gerasimenko, Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors
M Fried, T. Lohner, and J. Gyulai, Ellipsometric Analysis
A. Seas and C. Christofides, Transmission and Reflection Spectoscopy on Ion Implanted Semiconductors
A. Othonos, Photoluminescence and Raman Scattering of Ion Implanted Semiconductors: Influence of Annealing
Thermal Wave Analyses
C. Cristofides, Photomodulated Thermoreflectance Investigation of Implanted Wafers: Annealing Kinetics of Defects
U. Zammit, Photothermal Delection Spectroscopy Characterization of Ion-Implanted and Annealed Si Films
A. Mandelis, A. Budiman, and M. Vargas, Photothermal Deep Level Transient Spectroscopy of Impurities and Defects in Semiconductors
Quantum Well Structures and Compound Systems
R. Kalish and S. Charbonneau, Ion Implantation into Quantum Well Structures
A.M. Myasnikov and N.N. Gerasimenko, Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors