Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization
Academic Press
Published on 12. June 1997
316 pages
978-0-08-086443-3 (ISBN)
Description
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.
- Provides basic knowledge of ion implantation-induced defects
- Focuses on physical mechanisms of defect annealing
- Utilizes electrical, physical, and optical characterization tools for processed semiconductors
- Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
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Constantinos Christofides | Gerard Ghibaudo
Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization: Volume 46
Book
06/1997
Academic Press
€198.08
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Persons
Content
Optical CharacterizationM Fried, T. Lohner, and J. Gyulai, Ellipsometric AnalysisA. Seas and C. Christofides, Transmission and Reflection Spectoscopy on Ion Implanted SemiconductorsA. Othonos, Photoluminescence and Raman Scattering of Ion Implanted Semiconductors: Influence of Annealing
Thermal Wave AnalysesC. Cristofides, Photomodulated Thermoreflectance Investigation of Implanted Wafers: Annealing Kinetics of DefectsU. Zammit, Photothermal Delection Spectroscopy Characterization of Ion-Implanted and Annealed Si FilmsA. Mandelis, A. Budiman, and M. Vargas, Photothermal Deep Level Transient Spectroscopy of Impurities and Defects in Semiconductors
Quantum Well Structures and Compound SystemsR. Kalish and S. Charbonneau, Ion Implantation into Quantum Well StructuresA.M. Myasnikov and N.N. Gerasimenko, Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors
