
Semiconductor Materials and Technology
Trans Tech Publications Ltd (Publisher)
Published on 25. August 1997
Software
Digital media
260 pages
978-3-03859-985-2 (ISBN)
Description
The subject area of electronic devices has undergone a rapid expansion in recent years. New developments are continually accurring all over the world. Progress in the field of electronic devices is, however, dependent upon the production and characterization of device grade material. The science and technology of electronic materials has attracted somewhat less attention, as compared with device development.
More details
Language
English
Place of publication
Switzerland
Publishing group
Trans Tech Publications
Target group
Professional and scholarly
Dimensions
Height: 142 mm
Width: 125 mm
Thickness: 10 mm
Weight
200 gr
ISBN-13
978-3-03859-985-2 (9783038599852)
DOI
10.4028/www.scientific.net/SSP.55
Schweitzer Classification
Other editions
Additional editions

R. M. Mehra | P. C. Mathur
Semiconductor Materials and Technology
Book
08/1997
Trans Tech
€96.00
Article exhausted; check different version

Trans Tech Publications Ltd | R.M. Mehra | P.C. Mathur
Semiconductor Materials and Technology (ICSMT)
E-Book
08/1997
Trans Tech Publications Ltd
€171.20
Available for download
Content
Epitaxial Growth and Characterization of Nitride SemiconductorsCrystalline Bi2Se3 Thin Films: Growth and PropertiesGrowth of High Purity GaAs Layers by Vapour Phase EpitaxyAmorphous Chalcogenide Semiconductors: The Role of Bismuth AdditionSuppression of Auger Recombination by Strain in Sb Based mid-IR LasersStudy of Gate Length, Channel Length and Gate-Source Spacing on the GaAs MESFET CharacteristicsPhysical Principles of New Devices Related to Giant Electric Field Effect in MDS StructureRaman Spectroscopic Investigation of ZnO and Doped ZnO Films, Nanoparticles and Bulk Material at Ambient and High PressuresMicroprocessing of Electronic Materials Using Short Wavelength LasersBand Gap Measurement of the Sintered Cdx Se1-x Films from Reflectance MeasurementZnTe Single Crystal Growth, Photoluminescence and Laser Ablation StudiesPhotoluminescence Study of Hydrogen Passivation of ZnTeNovel Lateral MOS Controlled Power Devices and Technologies for High Voltage Integrated CircuitsTin Oxide Gas SensorsStructure and Composition of Pulsed Laser Deposited ZnSe FilmsThe Phenomenology of Luminescence in Nanocrystalline SiliconStudies on Electrical Properties of CdS1-xSex Thin FilmsDevelopment and Characterization of Porous Silicon (a Review)Temperature-Dependent Behaviour of Chalcogenide Thin Film Contacts on Porous SiliconA Review on Template Synthesis: A Membrane Based Technology for Generation of Nano- / Micro-MaterialsIon Channeling Studies in InxGa1-xAs / GaAsElectronic Properties Study of Carbon NanostructureThermodynamic Equilibrium between Free Carriers and Excitons and Validity of Mass Action Law in GaAs Quantum WellsAnnealing Behaviour of High Energy 120Sn Implanted GaAsInfluence of Emitter-Base Junction Displacement on the Band Structure in Heterojunction Bipolar TransistorsElectrically Conducting Polymers: An OverviewElectronic Transport Properties of Mn-Doped a-Se80-xTe20Znx SystemA Comparative Study on Capacitance and Conductance-Voltage Response of Titanium Dioxide Based MOS Hydrogen SensorA New Electrochemical Technique for Deposition of Quaternary Compound Cu(InyGa1-y)Se2 Thin Films for Photovoltaic Applicationsn-Cd0.925Pb0.075S:Sb Photoelectrode / Electrolyte Solar CellsRole of Oxygen on Donor Formation in CZ-Silicon During 430-630 ?C Heat TreatmentPhotoinduced Metastabilities in Organopolysilane FilmsPosition of Dangling Bond States in Doped a-Si:HPotential Fluctuations and Staebler-Wronski EffectEnergy Spectrum of Semiconductor Quantum Wells with Error Function Profile: Tunneling Resonance Calculation and ExperimentLaser Induced Recrystallisation of Electrophoretically Deposited CdTe and CulnSe2 FilmsField Effect Studies on MIS-Structure of P-Type CulnTe2 Films Having Excess Cu and InDirect Microfabrication of Chalcogenide Glasses by Light and Electron-Beam ExposuresThe Impurity Doping in Widegap SemiconductorsPhonon Conductivity in Arsenic Doped Germanium at Low Temperature for Intermediate Donor ConcentrationReactive Plasma Processes for the Fabrication of Nano-Dimensional Semiconductor DevicesSynthesis and Optical Characteristics of Solution Grown HgxCd1-xS Thin FilmsMagnetoresistance Measurements on Single Element Photoconductive Hg1-xCdxTe DetectorsEffect of Heavy Doping on Dark Conductivity of TBP Doped n-Type a-Si:H FilmsBarrier Height of Ga-pSi(p) Schottky DiodesSintered Ternary FilmsHigh-Field Transport in Quantum-Well NanostructuresElectrical, Optical and Alloy Scattering Studies of MOCVD Grown InxGa1-xAs Epitaxial Layers on GaAs SubstratesSemiconducting Polymers for Environment and Micro-Biological DetectionElectrical Properties of Zirconium Sulphoselenide Single CrystalsProperties of Bismuth Molybdate as Ethanol Sensor Semiconductor MaterialComposition of (Bi2S3)1-x(CdS)x Semiconductor Thin Films by Proton Induced X-Ray Emission and Helium BackscatteringStudy of Mg Associated Levels in GaNOptical Properties of a-Se80-xTexGa20 Thin FilmsElectrical, Optical and Structural Properties of Copper Aluminium diSelenide Thin FilmsFabrication of a New Basic Structure (Al-Ga2Se3Si) for Photovoltaic ApplicationPrediction of Structural Units in Amorphous Ga(1-x)Sex