Gettering and Defect Engineering in Semiconductor Technology

Defect Engineering in VLSI-TechnologiesGettering in Silicon by Oxygen Related Defects, Stacking Faults and Thin Polycrystalline FilmsAdvances in the Understanding of Oxygen and Carbon in SiliconInvestigations of the Structure, Formation, and Annihilation of Thermally Induced Donors in SiliconEffect of Volume Defects on Gold Gettering in CZ-SIInvestigations of the Behaviour of Transition Metals in SiliconDefect Engineering for Bicmos-TechnologyInvestigation of Gettering Phenomena in Semiconductors by Simultaneous Charge Collection Microscopy and CathodoluminescenceImplantation Induced Defect Modification in P Doped Bipolar StructuresThe Properties of the Defects in Heavy Implanted SiliconDefect Formation and Lateral Oxidation during Locos ProcessingDefects and Their Influence on Parasitic Devices in Integrated CircuitsVolume Defect Formation in CZ SI Wafers and Related Electrical EffectsBuried Layer Processing for Advanced Bipolar TechnologyOxygen Precipitation in Silicon: Correlation of the Experimental Results Obtained with IR Spectroscopy, Preferential Etching and X-Ray TopographyGettering of Fast Diffusing Impurities by Radiation Defects in III-V SemiconductorsOn the Two-Step Nucleation in Internal Gettering for CMOS Fabrication ProcessCreation of Deep Denuded Zones in CZ Silicon WafersDefect Engineering for ULSI Epitaxial SiliconComputer-Simulation of Gold-Redistribution in SiliconAn Attempt to Simulate Oxygen Precipitation in SiliconDefect Formation in Dislocation-Free Silicon Containing Oxygen Influence of Preannealing on Oxygen PrecipitationSilicon Intrinsic Gettering Durability and EffectivenessEffect of Heat Treatment on Defect Formation in SiliconEffects of Rapid Thermal Annealing Treatments on Electrical and Structural Properties of SiliconDefect Reactions in SemiconductorsElectronic States in Plastically Deformed SiliconDefect Formation and Impurity Redistribution Due to the Electric Field and Elastic Stresses in Interface RegionsInteraction of Point Defects with Interstitial Clusters, Dislocations and Impurities During in SITU Electron Irradiation of Silicon Crystals in the Electron MicroscopeDependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted SiliconImpurity Gettering in Semicrystalline Silicon Solar CellsFormation and Defect Structure of Fe-B-Fe Complexes in SiliconElectrical Activity and Impurity Precipitation in Silicon Grain BoundariesPhoto-Thermal Ionization Spectroscopy of Point Defects in SemiconductorsKink-Point Defect Interaction and Mobility of Dislocations in SemiconductorsI. Conductivity Along Dislocations: Temperature Dependence and Nonlinear Effects II. Combined Resonance and Structure Peculiarities of Plastically Deformed SiliconRecrystallization and Defect Formation in Ion-Implanted Silicon Studied by Transmission Electron MicroscopyAuger Recombination in Heavily-Doped p+ SiliconPhoto-Capacitive Spectroscopy of Sulphur Atoms and Heat Treatment Defects in n-Si EPR Detection of Complex Platinum-Related Defects in SiliconDefect Kinetics and Impurity Diffusion During Hot Implants Into SiliconThe Peculiarities of Deep Level Defect Passivation in SI by Atomic Hydrogen Dislocation Motion in Compound SemiconductorsDislocation Structures after Microdeformation of CaAs Single CrystalsThe Effect on the Schottky Barrier Height of Diffusion of Pt into Si From PtSiElectron Pulse Irradiation of Semiconductor DevicesCharge Collection Microscopy in Gettering and Defect EngineeringLifetime in SiliconScanning Infra-Red Microscope Investigation of Oxide Particles in Czochralski Silicon Heat-Treated for Intrinsic Gettering Laser Scanning Tomography: A Study of the Defect Cluster Nucleation and Growth in SiliconThe Effect of Low-Energy Electron and Ion Beams on Properties of Near Surface Layers in Semiconductor CrystalsThe Capacitance Microscope: A Non-Contacting Stylus Technique for the Investigation of Semicionductor SurfacesSynchrotron Radiation X-Ray Studies on Strain in Semiconductor Crystals Positron Sudies of Thermal-Induced Defects in SiliconDLTS Investigations of the Carbon-Related Centers in SiThe Noise Spectroscopy of Defects and Impurities in Compensated SiliconDetermination of Generation Lifetime and Surface Generation Velocity by Sine-Voltage Sweep C-V MethodSilicon Plates Homogeneity Diagnostics Method by Means of Semiconductor-Electrolyte Structure Surface Photovoltage MeasurementElectrically Active Near-Surface Implantation Defects in Silicon and GaAsTrap-Spectroscopy in Insulating Layers Insulator Investigations in MIS Structures with Constant-Capacitance-DLTS TechniqueA Theoretical Model of the Surface Avalanche MethodApplication of High Tc Superconducting Thin Films in Microelectronics-Possibilities and IllusionsSemiconductor Dynamic MemoriesEffect of Vibration Frequency and Sample Composition on Acoustic Properties of Y-Ba-Cu-O High-TC SuperconductorsSOI-Films by Zone Melting Recrystallization of Polycrystalline SiliconHeterogeneous Ion Synthesis of Isolating Layers in SiSpectroscopic Ellipsometry Studies of Silicon on Insulator StructuresSilicon-on-Insulator Technology by Si-MBEDefect Microchemistry at the Si/SiO2 Interface Grown on Polycrystalline Silicon Sheets. Hydrogenation Effect StudyInterfacial Defects Study of the Gallium Arsenide on Silicon HeterostructureSome Aspects of Interface and Surface Eingineering of AIII-BV-Compound-SemiconductorsSOI by Silicon Dioxide Thermal BondingDefect Engineering in SOI-Structures Formed by High Dose Implantation of Reactive IonsStrain and Critical Thickness of MBE Grown CaF2-Insulators on Si(111)Defect Control in Thick SOI-Films Produced by Zone Melting RecrystallizationDefects and Their Influence on Parasitic Devices in Integrated CircuitsFormation and Structure of Iron-Impurity Complexes in SiliconDefect Formation in Dislocation-Free Silicon Containing Oxygen