Silicon Carbide and Related Materials 2018

Advances in In Situ SiC Growth Analysis Using Cone Beam Computed TomographyCold Split Kerf-Free Wafering Results for Doped 4H-SiC BoulesTracking of the Growth Interface during PVT-Growth of SiC Boules Using a X-Ray Computed Tomography SetupModified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal GrowthImpacts of TaC Coating on SiC PVT Process Control and Crystal QualityMajor Carrier Element Concentrations in SiC Powder and Bulk CrystalVariation of Vanadium Incorporation in Semi-Insulating SiC Single Crystals Grown by PVT MethodStudy on N and B Doping by Closed Sublimation Growth Using Separated Ta CruciblePolytype Control by Pretreatment of SiC Source Powder for 4H-SiC Single Crystal GrowthOptimization of the SiC Powder Source Size Distribution for the Sublimation Growth of Long Crystals BoulesNew Materials for Semi-Insulating SiC Single Crystal Growth by PVT MethodA Comparative Study of the Crystal Growth Techniques of Silicon Carbide, Technology Adaption and the Road to Low Cost Silicon Carbide MaterialsResearch on the Key Problems in the Industrialization of SiC Substrate MaterialsInfluence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC WafersStudy on Dislocation Behaviors during PVT Growth of 4H-SiCApplication of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT GrowthEffect of Melt-Back Process on the Quality of Grown Crystal in SiC Solution GrowthEvaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-Si? Wafer Fabricated by the Solution Growth MethodSolution Growth of 4-Inch Diameter SiC Single Crystal Using Si-Cr Based SolventHigh Quality 4H-SiC Epitaxial Layer by Tuning CVD ProcessContinuous Growth of Buffer/Drift Epitaxial Stack Based on 4H-SiC by Quick Change of N2 Flow Rate under High Growth Rate ConditionRepeatability of Epitaxial Growth of n-Type 4H-SiC Films by High Speed Wafer Rotation Vertical CVD ToolExtensive 99% Killer Defect Free 4H-SiC Epitaxial Layer toward High Current Large Chip DevicesInfluence of Substrate Properties on the Defectivity and Minority Carrier Lifetime in 4H-SiC Homoepitaxial LayersBasal Plane Dislocation Conversion Enhancement in 4H-SiC Homo-Epitaxial Layers by Ion Implantation into the WaferEffect of Surface Etching Conditions on Stacking Faults in 4H-SiC EpitaxyNew SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD ReactorGermanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC SubstratesA Study of CVD Growth Parameters to Fill 50-?m-Deep 4H-SiC TrenchesEffect of HCL on Surface Free Energy of SiC during CVD Trench FillingHigh Temperature SiC Reactor Cleaning Using Chlorine Trifluoride Gas Achieved by Purified Pyrolytic Carbon Coating FilmVapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD TemplatesNovel Carbon Treatment to Create an Oriented 3C-SiC Seed on SiliconModeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data BaseStructural Strain in Single Layer Graphene Fabricated on SiCEvaluation of the Impact of Al Atoms on SiO2/ SiC Interface Property by Using 4H-SiC n+-Channel Junctionless MOSFETCryogenic Characterization of NH3 Post Oxidation Annealed 4H-SiC Trench MOSFETsSurface Morphology of 4H-SiC after Thermal OxidationSubthreshold Drain Current Hysteresis of Planar SiC MOSFETsAccurate Dopant and Interface Characterization in Oxidized SiC with Refined Non-Contact C-V TechniqueFirst Principles Study of the Influence of the Local Steric Environment on the Incorporation and Migration of NO in a-SiO2Evidence for an Abrupt Transition between SiO2 and SiC from EELS and Ab Initio ModellingTheory of Carbon-Vacancy Diffusion at the SiO2/4H-SiC InterfaceDFT Calculation for Oxidation Reaction of SiC(0001)Characterization of SiO2/SiC Near-Interface Oxide Traps with Constant-Capacitance Deep-Level Transient SpectroscopyCharacterization of Near-Interface Traps at Dielectric/SiC Interfaces Using CCDLTSAtomic Coordination Analysis of Nitrogen Introduced in SiO2/ SiC Interface and SiO2 Layer by XAFS MeasurementSub-nm-Scale Depth Profiling of Nitrogen in NO- and N2-Annealed SiO2/4H-SiC(0001) StructuresSiO2/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance MeasurementsA Temperature Independent Effect of Near-Interface Traps in 4H-SiC MOS CapacitorsIdentification of Near-Interface Trap Distribution by Parameter EstimationImpact of Pit Defects on the Initial Electrical Characteristics of Planar-MOSFET DevicesObservation of Dislocation Conversion in 4H-SiC Epitaxial Wafer by Mirror Projection Electron MicroscopyMonitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron MicroscopeOptical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy MethodDynamics Analysis of Single Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diode Based on Free EnergyAnalysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature TreatmentDetecting Basal Plane Dislocations Converted in Highly Doped EpilayersDislocations Propagation Study Trough High-Resolution 4H-SiC Substrate MappingInitiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N DiodesEffect of Defects in Silicon Carbide Epitaxial Layers on Yield and ReliabilityEvaluation of Effect of Mechanical Stress on Stacking Fault Expansion in 4H-SiC P-i-N DiodeDeep Electronic Levels in n-Type and p-Type 3C-SiCCombined EPR and Photoluminescence Study of Electron and Proton Irradiated 3C-SiCEffects of Aluminum Incorporation on the Young?s Modulus of 3C-SiC EpilayersElectrically Active Levels Generated by Long Oxidation Times in 4H-SiCMinority Carrier Lifetime Measurements on 4H-SiC Epiwafers by Time-Resolved Photoluminescence and Microwave Detected PhotoconductivityCarrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC(Al)Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers4H-SiC p-Type Doping Determination from Secondary Electrons ImagingUltra-Fast and High-Precision Crystal Orientation Measurements on 4H-Si?Study of Nitrogen Doping Effect on Lattice Strain Variation in 4H-SiC Substrates by Synchrotron X-Ray Contour Mapping MethodNewly Resolved Phonon-Assisted Transitions and Fine Structure in the Low Temperature Wavelength Modulated Absorption and Photoluminescence Spectra of 6H SiCHigh Resolution Investigation of Stacking Fault Density by HRXRD and STEMElectrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC SubstratesNano and Micro-Scale Simulations of Si/4H-SiC and Si/3C-SiC NN-Heterojunction DiodesCharacterization of ?-Silicon Carbide and Potential Use as Irradiation Temperature MonitorTerahertz Emission from SiC Natural Superlattices in Strong Electrical FieldRecent Advances in the Doping of 4H-SiC by Channeled Ion ImplantationChanneled Implantations of p-Type Dopants into 4H-SiC at Different TemperaturesChanneling in 4H-SiC from an Application Point of ViewFabrication and Characterization of 3.3-kV SiC DMOSFET with Self-Aligned Channels Formed by Tilted Ion ImplantationComparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch RegionThermal Annealing of High Dose P Implantation in 4H-SiCHigh-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device FabricationEffects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC LayersIncreasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer LaserActivation Energy for the Post Implantation Annealing of 1019 cm-3 and 1020 cm-3 Ion Implanted Al in 4H SiC1300?C Annealing of 1?1020 Al+ Ion Implanted 3C-SiCRaman Spectroscopy Characterization of Ion Implanted 4H-SiCSurface Characterization of Ion Implanted 4H-SiC Epitaxial Layers with Ion Energy and Concentration VariationsOn the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect MeasurementsLateral Straggling of Ion Implantation Distributions in 4H-SiC Investigated by SIMSDecoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry OxidationDetermination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM MeasurementsCharacterization of Ba-Introduced Thin Gate Oxide on 4H-SiCStudy of the Post-Oxidation-Annealing (POA) Process on Deposited High-Temperature Oxide (HTO) Layers as Gate Dielectric in SiC MOSFETElectrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiCImproved SiO2/ 4H-SiC Interface Defect Density Using Forming Gas AnnealingImproved Field Effect Mobility in Si-Face 4H-SiC MOSFETs with a Deposited SiNx Interface LayerEvidence of Channel Mobility Anisotropy on 4H-SiC MOSFETs with Low Interface Trap DensityElectrical Properties of Thermal Oxide on 3C-SiC Layers Grown on SiliconFabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on SiliconComparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFETMicrostructural Analysis of Ti/Ni Bilayer Ohmic Contacts on 4H-SiC LayersOptimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiCLaser Annealing Simulations of Metallisations Deposited on 4H-SiCArgon Bombardment of 4H Silicon Carbide Substrates for Tailored Schottky Diode Barrier HeightsSurface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS AnalysisDeep Level Transient Spectroscopy (DLTS) Study of 4H-SiC Schottky Diodes and PiN DiodesChlorine Trifluoride Gas Distributor Design for Single-Crystalline C-Face 4H-Silicon Carbide Wafer EtcherHigh-Efficiency Planarization of SiC Wafers by Water-CARE (Catalyst-Referred Etching) Employing Photoelectrochemical OxidationImpact of Subsurface Damage on SiC Wafer ShapeStudy of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-PillarsSurge Current and Avalanche Robustness of Commercial 1200 V SiC Schottky DiodesInfluence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS DiodesThe Impact of Non-Ideal Ohmic Contacts on the Performance of High-Voltage SiC MPS DiodesOn the Development of 1700V SiC JBS Diodes in a 6-Inch FoundryMechanisms and Characteristics of Large-Area High-Current-Density 4H-SiC Trench Junction Barrier Schottky DiodesAdvanced Electrical Characterisation of High Voltage 4H-SiC PiN DiodesPerformance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low TemperaturesMulti-Barrier Height Characterization and DLTS Study on Ti/W 4H-SiC Schottky DiodeComparison of SiC MOSFET Characteristics Following Body-Diode Forward-Current StressAchieving Reduced Specific On-Resistance in 1.2 kV SiC Power MOSFETs at Elevated TemperatureTemperature Dependency of Silicon Carbide MOSFET On-Resistance Characterization and ModelingTemperature Dependence of dV/dt Impact on the SiC-MOSFET1.2 kV SiC Trench-Gate MOSFETs with Dual Shielding RegionsDesign Optimization of 1.2kV 4H-SiC Trench MOSFETInverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical CharacterizationSuppression of Short-Channel Effects in 4H-SiC Trench MOSFETs1.2-kV SiC Trench-Etched Double-Diffused MOS (TED-MOS)An Investigation into the Dynamic Behavior of 3.3kV MOSFETs Body DiodeExperimental Study of High-Temperature Switching Performance of 1.2kV SiC JBSFET in Comparison with 1.2kV SiC MOSFETDesign of a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated CircuitsImpact of Interface Trap Density of SiC-MOSFET in High-Temperature EnvironmentPerformance Improvement of >10kV SiC IGBTs with Retrograde p-WellDeep Trench Termination Structure with p-Type SiC Layer for Improved Reliability of High Voltage IGBTImproved Device Characteristics Obtained Using a Novel High-K Dielectric Stack for 4H-SiC n-IGBT: HfO2-SiO2- AlN15 kV n-GTOs in 4H-SiCSiC Charge-Balanced Devices Offering Breakthrough Performance Surpassing the 1-D Ron versus BV LimitImprovement of Switching Characteristics in 6.5-kV SiC IGBT with Novel Drift Layer StructureSimulation Study for the Structural Cell Design Optimization of 15kV SiC p-Channel IGBTsTCAD Model Calibration of High Voltage 4H-SiC Bipolar Junction TransistorsSilicon Carbide BJT Oscillator Design Using S-ParametersEffect of Temperature on the Electrical Characteristics of 4H-SiC Planar n/p-Type Junctionless FET: Physics Based SimulationCompact Modeling of SiC and GaN Junction FETs at High TemperatureHigh-Voltage SiC-JFET Fabrication and Full CharacterizationPerformance Limits of Vertical 4H-SiC and 2H-GaN Superjunction DevicesFirst Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC: A Proof of ConceptDevelopment of SOI FETs Based on Core-Shell Si/SiC Nanowires for Sensing in Liquid EnvironmentsCreation of Color Centers in SiC PN Diodes Using Proton Beam WritingFirst-Principles Study on Photoluminescence Quenching of Divacancy in 4H SiCRadiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation ModelsElectrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with ElectronsDirect Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image SensorsDependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation TemperatureChange in the Parameters of Electron-Irradiated 4H-SiC Schottky Diodes as a Function of the Time during Low-Temperature Isothermal AnnealingImpact of Device Structure on Neutron-Induced Single-Event Effect in SiC MOSFETsGate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm WafersNovel Method for Evaluation of Negative Bias Temperature Instability of SiC MOSFETs1200 V SiC MOSFETs with Stable VTH under High Temperature Gate Bias StressInfluence of High-Temperature Bias Stress on Room-Temperature VT Drift Measurements in SiC Power MOSFETsDesign Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS TransistorsDynamic Characterization and Robustness Test of High Voltage SiC MOSFETsAvalanche Ruggedness Characterization of 10 kV 4H-SiC MOSFETsAvalanche Robustness of 4600 V SiC DMOSFETsReliability and Ruggedness of Planar Silicon Carbide MOSFETsCapability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element AnalysisComparative Study on the Repetitive Unclamped-Inductive-Switching Capability(R-UIS) of 1200V 160mOhm SiC Planar Gate MOSFETsSuperior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETsOptimization of 1700V SiC MOSFET for Short Circuit RuggednessIndustrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and SolutionsDemonstration of 4H-SiC JFET Digital ICs Across 1000?C Temperature Range without Change to Input VoltagesA Monolithic 500?C D-Flip Flop Realized in Bipolar 4H-SiC TTL TechnologyA Study on Fastening the Switching Speed for Wide Bandgap Semiconductor Based Super CascodeImproving 5V Digital 4H-SiC CMOS ICs for Operating at 400?C Using PMOS Channel ImplantationHigh Temperature High Current Gain IC Compatible 4H-SiC Phototransistor4H-SiC Trench pMOSFETs for High-Frequency CMOS InvertersSiC Vertical-Channel n- and p-JFETs Fully Fabricated by Ion ImplantationImproved Offset Voltage Stability of 4H-SiC CMOS Operational Amplifier by Increasing Gamma Irradiation ResistanceComparative Study of Developed 1200V/50A Full SiC IEMOS and VMOS Power ModuleAn Efficient Simulation Methodology to Quantify the Impact of Parameter Fluctuations on the Electrothermal Behavior of Multichip SiC Power Modules6.5 kV Si/SiC Hybrid Power Module TechnologyDevelopment of a High-Speed Switching Silicon Carbide Power ModuleSiC Power Devices for Applications in Hybrid and Electric VehiclesPower Loss Comparison in a BOOST PFC Circuit Considering the Reverse Recovery of the Forward Diode