Defects and Diffusion in Semiconductors, 2003
Published on 11. November 2003
Software
Digital media
458 pages
978-3-0357-0941-4 (ISBN)
Description
This volume of the annual series contains nearly 800 selected abstracts of recent research in the semiconductor field: dating up to about September 2003 (depending upon individual source publication dates).
More details
Language
English
Place of publication
Switzerland
Publishing group
Trans Tech Publications
Target group
Professional and scholarly
Dimensions
Height: 142 mm
Width: 125 mm
Thickness: 10 mm
Weight
200 gr
ISBN-13
978-3-0357-0941-4 (9783035709414)
DOI
10.4028/www.scientific.net/DDF.221-223
Schweitzer Classification
Other editions
Additional editions
Trans Tech Publications Ltd | David J. Fisher
Defects and Diffusion in Semiconductors VI
E-Book
11/2003
Trans Tech Publications Ltd
€211.86
Available for download
Content
Stable Hydrogen Pair Trapped at Carbon Impurities in Silicon New Approach to Capacitance Studies of 'DX' CentersDiodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature Modeling of Dopant and Defect Interactions in Si Process Simulators Spectroscopic Study of Magnesium-Related Impurities in Silicon Makyoh Topography: A Simple Yet Powerful Optical Method for Surface Flatness and Defect Characterisation Electron Diffraction of 3-D Defects in Nanostructural II-VI Semiconductors A Finite Difference Calculation of Impurity Migration in Semiconductors by the Kick-Out Mechanism In-Diffusion Concentration Profiles of Dopants in Semiconductors Recent Advances in the Measurement of Interstitial Oxygen in Silicon by Infra-Red Spectroscopy Algorithm Animation for Superdiffusion of a Non-Equilibrium in Semiconductors