Silicon Carbide and Related Materials 2009

High Quality 100mm 4H-SiC Substrates with Low ResistivityGrowth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based MeltGrowth of 4H-SiC Crystals on the 8? Off-Axis 6H-SiC Seed by PVT MethodCharacterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed BacksideStatus of 3" 6H SiC Bulk Crystal GrowthObservation of Lattice Plane Bending during SiC PVT Bulk Growth Using In Situ High Energy X-Ray DiffractionSolution Growth and Crystallinity Characterization of Bulk 6H-SiCNon-Polar SiC Crystal Growth with m-Plane(1-100) and a-Plane(11-20) by PVT MethodPurifying Mechanism in the Acheson Process - A Thermodynamic StudyGrowth of Single-Phase 2H-SiC Layers by Vapor?Liquid?Solid ProcessOverview of 3C-SiC Crystalline GrowthStudy of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT TechniqueHeavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si MeltsImprovements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC CrystalsIs the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?The Effect of Phenol Resin Types and Mixing Ratios on the Synthesis of High-Purity ?-SiC Powder by the Sol-Gel Method Low-Pressure Fast Growth and Characterization of 4H-SiC EpilayersGrowth and Properties of SiC On-Axis Homoepitaxial LayersHigh-Performance Multi-Wafer SiC Epitaxy ? First Results of Using a 10x100mm ReactorConcentrated Chloride-Based Epitaxial Growth of 4H-SiC4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face SubstrateEpitaxial Growth of 4H-SiC with High Growth Rate Using CH3Cl and SiCl4 Chlorinated Growth PrecursorsChloride-Based CVD at High Growth Rates on 3? Vicinal Off-Angles SiC WafersUse of SiCl4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiCShort-Length Step Morphology on 4? Off Si-Face Epitaxial Surface Grown on 4H-SiC SubstrateImprovement of Surface Roughness for 4H-SiC Epilayers Grown on 4? Off-Axis SubstratesDoping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial GrowthInvestigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High TemperatureThe Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)SiC Epitaxial Growth on Si(100) Substrates Using Carbon TetrabromideGrowth Rate Effect on 3C-SiC Film Residual Stress on (100) Si SubstratesLow-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using OrganosilaneFundamental Study of the Temperature Ramp-Up Influence for 3C-SiC Hetero-Epitaxy on Silicon (100)Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon SubstratesTuning Residual Stress in 3C-SiC(100) on Si(100)Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid PhaseBow in 6 Inch High-Quality Off-Axis (111) 3C-SiC FilmsLow Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC SubstratesSublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC SeedsInvestigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation EpitaxyProperties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of SubstratesSiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor DepositionIdentification of Defects Limiting the Carrier Lifetime in n- Epitaxial Layers of 4H-SiC Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC EpilayersTemperature Dependence of the Carrier Lifetime in 4H-SiC EpilayersCharacterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay MethodCL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial LayersNonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals On the Correlation of the Structural Perfection and Nonequilibrium Carrier Parameters in 3C SiC HeterostructuresIncrease of SiC Substrate Resistance Induced by AnnealingBarrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiCFundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted TransitionsElectronic Structure and Momentum-Dependent Resonant Inelastic X-Ray Scattering in Broad Band MaterialsElectronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon CarbideModeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC StructuresCalculation of Lattice Constant of 4H-SiC as a Function of Impurity ConcentrationPolytypism Study in SiC Epilayers Using Electron Backscatter DiffractionRaman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si RatiosLow Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC HeterostructuresDetermination of the Optical Bandgap of Thin Amorphous (SiC)1-x(AlN)x FilmsElastic Properties of Dense Organosilicate Glasses Dependent on the C/Si RatioA Pictorial Tracking of Basal Plane Dislocations in SiC EpitaxyOn the Luminescence and Driving Force of Stacking Faults in 4H-SiCSystematic First Principles Calculations of the Effects of Stacking Fault Defects on the 4H-SiC Band StructureIn-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth RateCharacterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation DensityNucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-EpitaxyDislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in EpilayersOptical and Structural Properties of In-Grown Stacking Faults in 4H-SiC EpilayersStructural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC SubstratesStructure of Inclusions in 4? Offcut 4H-SiC EpitaxyTime Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial LayersCondition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal ProcessSingle Shockley Stacking Faults in As-Grown 4H-SiC EpilayersInfluence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS DiodesDislocation Activity in 4H-SiC in the Brittle DomainCorrelation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiCTemperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial LayersCharacterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial LayerRoom-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiCRaman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC SubstratesStacking Faults around the Hetero-Interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution GrowthThe Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation EpitaxyA Study of Structural Defects in 3C-SiC Hetero-Epitaxial FilmsMacrodefects in Cubic Silicon Carbide CrystalsMicrostructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron MicroscopyTEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC SeedsTEM and SEM-CL Studies of SiC NanowiresCharacteristics of Porous 3C-SiC Thin Films Formed with Nitrogen Doping ConcentrationsTheory of Neutral Divacancy in SiC: A Defect for SpintronicsThe Carbon Vacancy Related EI4 Defect in 4H-SiCFine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiCThe Formation of Alphabet Lines in 4H SiC after Low-Energy Electron IrradiationNew Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4He Ion Irradiated 4H SiCLTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC SubstratesThermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV ElectronsThermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy ElectronsShallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC EpilayersA Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam IrradiationMetastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiCDeep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy ElectronsOptical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence TechniquesElastic Waves in Nano-Columnar Porous 4H-SiC Measured by Brillouin ScatteringBreakdown of Impurity Al in SiC PolytypesDeep Levels Observed in High-Purity Semi-Insulating 4H-SiCThermal Activation and Cathodoluminescence Measurements of Tb3+-Doped a-(SiC)1-x(AlN)x Thin FilmsDetection and Electrical Characterization of Defects at the SiO2/4H-SiC InterfaceThermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray IrradiationSiC and GaN MOS Interfaces ? Similarities and DifferencesMultiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO2 InterfaceDynamical Simulations of Dry Oxidation and NO Annealing of SiO2/4H-SiC Interface on C-Face at 1500K: From First PrinciplesPreannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETsNitridation of the SiO2/SiC Interface by N+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETsSystematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted SubstratesEffect of NO Annealing on 6H- and 4H-SiC MOS Interface StatesSignificant Decrease of the Interface State Density by NH3 Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond ConfigurationImproved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) SurfacesImproved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate OxideInvestigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric OxideExperimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiCA C-V Method of Slow-Switching Interface Traps Identification in Silicon Carbide MOS StructuresEDMR and EPR Studies of 4H SiC MOSFETs and CapacitorsElectrical Properties and Gas Sensing Characteristics of the Al2O3/4H SiC Interface Studied by Impedance SpectroscopyCrystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)Study of the Evolution of Basal Plane Dislocations during Epitaxial Growth: Role of the Surface KineticsExperimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) SurfacesModal Composition of the SiC Surface Electromagnetic Response to the External Radiation at Lattice Resonant FrequencyStudy of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman SpectroscopySingle Shockley Faults Enlargement during Micro-Photoluminescence Defects MappingCharacterization of Defects in Semi-Insulating 6H-SiC Substrates Using IR Thermal Imaging CameraAnalysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC SubstratesGrowth Rate and Thickness Uniformity of Epitaxial GrapheneStructural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure Graphene Growth on C and Si-Face of 4H-SiC ? TEM and AFM StudiesDifferences between Graphene Grown on Si-Face and C-FaceEpitaxial Graphene Elaborated on 3C-SiC(111)/Si EpilayersGrowth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with CarbonGrowth and Characterization of Epitaxial Graphene on SiC Induced by Carbon Evaporation Epitaxial Graphene Growth Studied by Low-Energy Electron Microscopy and First-PrinciplesStrain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman SpectroscopyUniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current MappingDeep UV Raman Spectroscopy of Epitaxial Graphenes on Vicinal 6H-SiC SubstratesOptical Transmission of Epitaxial Graphene Layers on SiC in the Visible Spectral RangeDensity Functional Simulations of Physisorbed and Chemisorbed Single Graphene Layers on 4H-SiC (0001), (000-1) and 4H-SiC:H SurfaceHydrogen Intercalation below Epitaxial Graphene on SiC(0001)Quasi-Freestanding Graphene on SiC(0001)Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary SubstratesTransport Properties of Single-Layer Epitaxial Graphene on 6H-SiC (0001)Defect Control in Growth and Processing of 4H-SiC for Power Device ApplicationsEffects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiCInfluence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETsExperimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTsNovel Fabrication Technology for Devices with nearly Temperature-Independent Forward CharacteristicsCorrelation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiCInvestigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad MetallizationsOn the Viability of Au/3C-SiC Schottky Barrier DiodesComparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate OxidesSignificant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation AnnealingConsequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC StructuresThe Limits of Post Oxidation Annealing in NOElectrical Activation of B+-Ions Implanted into 4H-SiCManganese in 4H-SiCEffects of Implantation Temperature on Sheet and Contact Resistance of Heavily Al Implanted 4H-SiCUltra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap SemiconductorsEffect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiCInfluence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial SamplesEffects of Helium Implantation on the Mechanical Properties of 4H-SiCNovel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma AshingTEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiCComparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond FilmsReliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion BarriersSiC-Die-Attachment for High Temperature ApplicationsCharacteristics of Gold Wire Bonds with Ti- and Ni-Based Contact Metallization to n-SiC for High Temperature ApplicationsDevelopment of a Wire-Bond Technology for SiC High Temperature ApplicationsRecent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap MaterialsReactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiCMorphology Improvement of Step Bunching on 4H-SiC Wafers by Polishing TechniqueFabrication and Use of Atomically Smooth Steps on 6H-SiC for Calibration of z-Displacements in Scanning Probe MicroscopyHexagonality and Stacking Sequence Dependence of Etching Properties in Cl2-O2-SiC SystemReduction of Surface Roughness of 4H-SiC by Catalyst-Referred EtchingSelf-Formation of Specific Pyramidal Planes in 4H-SiC Formed by Chlorine Based AmbienceImpact of CF4 Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing4H-SiC Surface Morphology Etched Using ClF3 GasInfluence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICsInfluence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium NitrideImpact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiCGate Oxide Long-Term Reliability of 4H-SiC MOS DevicesModel Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model
In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-PressuresRapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP StepsDirect Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force MicroscopyElectrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS DevicesComparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiCReliability of Thin Thermally Grown SiO2 on 3C-SiC Studied by Scanning Probe MicroscopyEffects of Post-Deposition Annealing on CeO2 Gate Prepared by Metal-Organic Decomposition (MOD) Method on 4H-SiCNanostructuring Techniques for 3C-SiC(100) NEMS StructuresSiC on SOI Resonators: A Route for Electrically Driven MEMS in Harsh EnvironmentTemperature Facilitated ECR-Etching for Isotropic SiC StructuringUltra-Precision Machining of Stainless Steel and Nickel with Single Crystal 4H and 6H Boule SiCThinning of SiC Wafer by Plasma Chemical Vaporization MachiningProperty Modification of 3C-SiC MEMS on Ge-Modified Si(100) SubstratesResidual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal CantileversElectric Discharge Machining for Silicon Carbide in Gases of Ar, Ar-CH4 and Ar-CF4 MixturesEffect of In Situ Doped Nitrogen Concentrations on the Characteristics of Poly 3C-SiC Micro ResonatorsActive Devices for Power Electronics: SiC vs III-N Compounds ? The Case of Schottky RectifiersA New Generation of SiC Schottky Diodes with Improved Thermal Management and Reduced Capacitive LossesGermanium ? Silicon Carbide Heterojunction Diodes ? A Study in Device Characteristics with Increasing Layer Thickness and Deposition TemperatureFabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height4.6 kV, 10.5 mOhm?cm2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers 6.5 kV SiC PiN Diodes with Improved Forward CharacteristicsCorrelation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes Optimization of Bipolar SiC-Diodes by Analysis of Avalanche Breakdown Performance Analyses of High Leakage Currents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw DislocationsPreliminary Investigation of Laser Induced Photoconductivity in 4H-SiC PiN Diodes and HPSI Substrate Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation 4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth MethodFeasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations Fast Switching with SiC VJFETs - Influence of the Device TopologyPerformance of 15 mm2 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current Radiation Hardness Evaluation of SiC-BGSITPhysics of Hysteresis in MESFET Drain I-V Characteristics: Simulation Approach Characterization of SiC JFETs and its Application in Extreme Temperature (over 450?C) Circuit Design Amplitude Shift Keyed Radio Communications for Hostile EnvironmentsMinimization of Drain-to-Gate Interaction in a SiC JFET Inverter Using an External Gate-Source CapacitorDesign and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250?CCircuit Modeling of Vertical Buried-Grid SiC JFETs Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETsEffect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs Wafer-Level Hall Measurement on SiC MOSFETEffect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics 1360 V, 5.0 mOcm2 Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1) Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO2 Stacked Gate Dielectrics Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETsElectrical Characteristics of MOSFETs Using 3C-SiC with Buried Insulating Layer Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation9 kV, 1 cm2 SiC Gate Turn-Off ThyristorsLarge Area >8 kV SiC GTO Thyristors with Innovative Anode-Gate Designs10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiCSiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter 2.2 kV SiC BJTs with Low VCESAT Fast Switching and Short-Circuit CapabilityExperimental Study of Degradation in 4H-SiC BJTs by Means of Electrical Characterization and ElectroluminescenceOptical Insights into the Internal Electronic and Thermal Behavior of 4H-SiC Bipolar Devices A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching SpeedFast Switch-Off of High Voltage 4H?SiC npn BJTs from Deep Saturation Mode3kV 4H-SiC Thyristors for Pulsed Power ApplicationsOperation of Silicon Carbide BJTs Free from Bipolar DegradationTemperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTsImprovement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJTPerformance of Silicon Carbide Avalanche Photodiode Arrays and PhotomultipliersOptical Properties of Antireflective Subwavelength Structures on 4H-SiC for UV Photodetectors Impact Ionization in 4H-SiC Nuclear Radiation DetectorsCharacterisation of Low Noise 4H-SiC Avalanche PhotodiodesFabrication and Characteristics of Micro Heaters Based on Polycrystalline 3C-SiC for High Temperature and Voltage Silicon Carbide APD with Improved Detection Sensitivity and StabilitySilicon Carbide Based Energy Harvesting Module for Hostile EnvironmentsNew Generation of SiC Based Biodevices Implemented on 4? WafersSiC vs. Si - Evaluation of Potentials for Performance Improvement of Power Electronics Converter Systems by SiC Power SemiconductorsFully-Integrated 6H-SiC JFET Amplifiers for High-Temperature SensingApplication of SiC Normally-On JFETs in Photovoltaic Power Converters: Suitable Circuits and PotentialsFabrication of SiC JFET-Based Monolithic Integrated CircuitsElectrical and Thermal Performance of 1200 V, 100 A, 200?C 4H-SiC MOSFET-Based Power Switch ModulesPerformance and Reliability of SiC MOSFETs for High-Current Power ModulesInverter Loss Reduction Using 3kV SiC-JBS Diode and High-Speed Drive Circuit Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC MaterialCharacterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 ?C to +500 ?C Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction TemperaturesNMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications 600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFETA Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJTFabrication and Testing of 4H-SiC MESFETs for Analog Functions CircuitsMixed Mode Modeling and Characterization of a 4H-SiC Power DMOSFET Based DC-DC Power Converter SiC JFETs for Power Module ApplicationsSystem Improvements of Photovoltaic Inverters with SiC-TransistorsDiscussion of Turn on Current Peaks of SiC Switches in Half BridgesAlN Substrates and Epitaxy ResultsFree Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC SubstratesGrowth of Nanocrystalline Translucent h-BN Films Deposited by CVD at High Temperature on SiC SubstratesDeep-Level Defects in AlN Single Crystals: EPR StudiesQuality Control and Electrical Properties of Thin Amorphous (SiC)1-x(AlN)x Films Produced by Radio Frequency Dual Magnetron SputteringCalculations of the Spontaneous Polarizations and Dielectric Constants for AlN, GaN, InN, and SiC2DEG HEMT Mobility vs Inversion Channel MOSFET MobilityEvolution of the Electrical Behaviour of GaN and AlGaN Materials after High Temperature Annealing and Thermal Oxidation Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates Energy Optimization of As+ Ion Implantation on SiO2 Passivation Layer of AlGaN/GaN HEMTs Characteristics of Diamond SBD?s Fabricated on Half Inch Size CVD Wafer Made by the ?Direct Wafer Fabrication Technique? High Temperature Characteristics of Diamond SBDsField Effect Transistors Based on Catalyst-Free Grown 3C-SiC NanowiresNitrogen Centers in Nanodiamonds: EPR Studies Silicon-on-SiC, a Novel Semiconductor Structure for Power Devices