Physical Properties of III-V Semiconductor Compounds - InP, InAs, GaAs, GaP, InGaAs, and InGaAsP
Published on 28. January 2005
Software
Other digital
336 pages
978-3-527-60281-0 (ISBN)
Description
The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
More details
Language
English
Place of publication
Weinheim
Germany
Target group
Professional and scholarly
Dimensions
Height: 250 mm
Width: 130 mm
Thickness: 15 mm
Weight
666 gr
ISBN-13
978-3-527-60281-0 (9783527602810)
Copyright in bibliographic data is held by Nielsen Book Services Limited or its licensors: all rights reserved.
Schweitzer Classification
Content
Structural Properties. Mechanical, Elastic, and Lattice Vibrational Properties. Thermal Properties. Collective Effects and Some Response Characteristics. Electronic Energy-Band Structure. Electron and Hole Deformation Potentials. Optical Properties. Elastooptic and Electrooptic Effects. Carrier Transport Properties. Strain Problems in InGaAs(P)-Based Heterostructures. Concluding Remarks. Appendix. Indexes.