Principles of Semiconductor Processes and Device Technology
1st Edition
Published on 21. April 2026
352 pages
978-3-527-84798-3 (ISBN)
Description
Systematically summarizes the content of semiconductor physics, material characterization, device physics, device characterization, semiconductor processing technologies.
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Zhigang Zang | Qingkai Qian
Principles of Semiconductor Processes and Device Technology
Book
approx. 06/2026
1st Edition
Wiley-VCH
€129.00
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Persons
Prof. Zhigang Zang was the winner of the National Youth Talent Project, Chongqing Outstanding Youth Fund, and the first batch Chongqing's leading talents in innovation and entrepreneurship. He graduated from Kyushu University in Japan in June 2011 with a PhD in Engineering in Electronics and Materials Applied Science. From 2011 to 2013, he engaged in related research work at National Shizuoka University in Japan and Nanyang Technological University in Singapore. He was selected in Chongqing's "Young Top Talents" program in June 2017; he was a researcher and doctoral supervisor of Chongqing University's "Hundred Talents Plan" from March 2014 to 2018; he was a professor and doctoral supervisor of Chongqing University from 2018 to present. He was selected as a leading talent in Chongqing and a distinguished professor of "Bayu Scholars" in 2019.
Qingkai Qian (Associate Professor) received his B.S. and M.S. degrees, both in physics from Tsinghua University, Beijing, China, in 2012 and 2014, respectively. He obtained his Ph.D. degree in electronic and computer engineering from the Hong Kong University of Science and Technology, Hong Kong SAR, China in 2018. He was as a postdoctoral researcher in Department of Electrical Engineering, The Pennsylvania State University from 2019 to 2020. He joined College of Optoelectronic Engineering, Chongqing University in 2021, and currently is an Associate Professor. His research interests are the optoelectronic devices based on perovskites, low-dimensional materials, and their related optical property investigations based on first-principle calculations. He is currently young editorial board member of Rare Metals and Vacuum.
Qingkai Qian (Associate Professor) received his B.S. and M.S. degrees, both in physics from Tsinghua University, Beijing, China, in 2012 and 2014, respectively. He obtained his Ph.D. degree in electronic and computer engineering from the Hong Kong University of Science and Technology, Hong Kong SAR, China in 2018. He was as a postdoctoral researcher in Department of Electrical Engineering, The Pennsylvania State University from 2019 to 2020. He joined College of Optoelectronic Engineering, Chongqing University in 2021, and currently is an Associate Professor. His research interests are the optoelectronic devices based on perovskites, low-dimensional materials, and their related optical property investigations based on first-principle calculations. He is currently young editorial board member of Rare Metals and Vacuum.
Content
CHAPTER 1: SEMICONDUCTOR PHYSICS
1.1 Introduction
1.2 Properties of Semiconductors
1.3 Crystal Structure and Types of Semiconductors
1.4 Carrier Transport
1.5 Doping Process
1.6 Energy Band Theory
1.7 PN Junctions
CHAPTER 2: SYNTHESIS AND CHARACTERIZATION OF OPTOELECTRONIC MATERIALS
2.1 Introduction
2.2 Synthesis of Semiconductors
2.3 Characterization
CHAPTER 3: EUV LITHOGRAPHY PROCESS OF SEMICONDUCTOR DEVICES
3.1 Introduction
3.2 EUV Lithography System and Working Principles
3.3 Development of Resist for EUV Lithography
3.4 Mask Materials and Designs for EUV Lithography
3.5 Conclusions and Perspectives
CHAPTER 4: TRANSISTORS
4.1 Bipolar Transistors
4.2 Field-Effect Transistors
4.3 Thin-Film Transistors
CHAPTER 5: LUMINESCENT MATERIALS AND DEVICES
5.1 Introduction
5.2 Principle of Semiconductor Luminescence
5.3 Structure and Feature of LEDs
5.4 Process of LEDs
5.5 GaN LEDs
5.6 Perovskite LEDs
5.7 White LEDs
CHAPTER 6: SUPERLUMINESCENT LIGHT EMITTING DIODES
6.1 Introduction
6.2 History of SLED
6.3 Principle of Active-MMI SLED
6.4 Merit and Results of Active-MMI SLED
CHAPTER 7: SOLAR CELLS
7.1 Introduction
7. 2 Basic Principles of Solar Cells
7.3 Typical Solar Cells
7.4 Manufacturing of Solar Cells
7.5 Applications of Solar Cells
7.6 Conclusion
CHAPTER 8: PHOTODETECTORS
8.1 Introduction
8.2 Principle of Photodetectors
8.3 General Metrics of Photodetectors
8.4 Perovskite Photodetectors
8.5 Metal-Semiconductor-Metal Photodetectors
8.6 Organic Photomultiplication Detectors
CHAPTER 9: GRAPHENE AND GRAPHENE-BASED DEVICES
9.1 Introduction
9.2 Structure and Properties of Graphene
9.3 Preparation Methods of Graphene
9.4 Graphene-Based Devices
9.5 Future of Graphene-Based Devices
1.1 Introduction
1.2 Properties of Semiconductors
1.3 Crystal Structure and Types of Semiconductors
1.4 Carrier Transport
1.5 Doping Process
1.6 Energy Band Theory
1.7 PN Junctions
CHAPTER 2: SYNTHESIS AND CHARACTERIZATION OF OPTOELECTRONIC MATERIALS
2.1 Introduction
2.2 Synthesis of Semiconductors
2.3 Characterization
CHAPTER 3: EUV LITHOGRAPHY PROCESS OF SEMICONDUCTOR DEVICES
3.1 Introduction
3.2 EUV Lithography System and Working Principles
3.3 Development of Resist for EUV Lithography
3.4 Mask Materials and Designs for EUV Lithography
3.5 Conclusions and Perspectives
CHAPTER 4: TRANSISTORS
4.1 Bipolar Transistors
4.2 Field-Effect Transistors
4.3 Thin-Film Transistors
CHAPTER 5: LUMINESCENT MATERIALS AND DEVICES
5.1 Introduction
5.2 Principle of Semiconductor Luminescence
5.3 Structure and Feature of LEDs
5.4 Process of LEDs
5.5 GaN LEDs
5.6 Perovskite LEDs
5.7 White LEDs
CHAPTER 6: SUPERLUMINESCENT LIGHT EMITTING DIODES
6.1 Introduction
6.2 History of SLED
6.3 Principle of Active-MMI SLED
6.4 Merit and Results of Active-MMI SLED
CHAPTER 7: SOLAR CELLS
7.1 Introduction
7. 2 Basic Principles of Solar Cells
7.3 Typical Solar Cells
7.4 Manufacturing of Solar Cells
7.5 Applications of Solar Cells
7.6 Conclusion
CHAPTER 8: PHOTODETECTORS
8.1 Introduction
8.2 Principle of Photodetectors
8.3 General Metrics of Photodetectors
8.4 Perovskite Photodetectors
8.5 Metal-Semiconductor-Metal Photodetectors
8.6 Organic Photomultiplication Detectors
CHAPTER 9: GRAPHENE AND GRAPHENE-BASED DEVICES
9.1 Introduction
9.2 Structure and Properties of Graphene
9.3 Preparation Methods of Graphene
9.4 Graphene-Based Devices
9.5 Future of Graphene-Based Devices
