Spintronic Materials and Technology
Published on 25. October 2006
423 pages
978-1-040-20476-4 (ISBN)
Description
Few books exist that cover the hot field of second-generation spintronic devices, despite their potential to revolutionize the IT industry.Compiling the obstacles and progress of spin-controlled devices into one source, Spintronic Materials and Technology presents an in-depth examination of the most recent technological spintronic developmen
More details
Language
English
Place of publication
London
United Kingdom
Publishing group
Taylor & Francis Ltd
Target group
College/higher education
File size
16,14 MB
ISBN-13
978-1-040-20476-4 (9781040204764)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions
Yongbing Xu | Sarah Thompson
Spintronic Materials and Technology
Book
09/2019
1st Edition
CRC Press
€97.60
Shipment within 15-20 days
Yongbing Xu | Sarah Thompson
Spintronic Materials and Technology
Book
10/2006
1st Edition
CRC Press
€340.76
Shipment within 15-20 days
Content
Spintronic Materials and Characterizations. Magneto-Optical Studies of Magnetic Oxide Semiconductors. Synthesis and Characterization of Wide Band-Gap Semiconductor Spintronic Materials. Magnetic Properties of (Ga,Mn)As. Soft X-Ray Resonant Magnetic Scattering from Magnetic Nanostructures. The Effect for Ru Magnetization Switching and CPP-GMR Enhancement. The Spin Dependent Interfacial Transparency. Spin Torque and Domain Wall Magneto Resistance. Current-Driven Switching of Magnetization-Theory and Experiment. Domain Wall Scattering and Current-Induced Switching in Patterned Ferromagnetic Devices. Domain Wall Magnetoresistance in Magnetic Nanowires. Introduction to a Theory of Current-Driven Domain Wall Motion. Spin-Injection and Spin Devices. Silicon-Based Spin Electronic Devices: Toward a Spin Transistor. Spin-LEDs: Fundamentals and Applications. Spin Photo-Electronic Devices Based on Fe and the Heusler Alloy Co2MnGa. Ballistic Spin Tranport across a Schottky Barrier Induced by Photoexcitation. Ferromagnetic Metal/III-V Semiconductor Hybrid Spintronic Devices. The Spin-Valve Transistor.
