
Solar Cell Materials
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"All in all it is a magnificent book that I take pride inhaving on my bookshelf." (EnergyTechnology, 13 October 2014)More details
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Dr. Gavin Conibeer is Deputy Director of the Centre of Excellence for Advanced Silicon Photovoltaics and Photonics at the University of New South Wales (UNSW, Australia). He has a BSc (Eng) and MSc (London) and received his PhD at Southampton University (UK). His research interests include third generation photovoltaics, hot carrier cooling in semiconductors, phonon dispersion modulation in nanostructures, high efficiency thermoelectric devices and photoelectrochemical generation of hydrogen. As well as numerous publications, Dr. Conibeer has also given a short course on Third Generation Photovoltaics at UNSW and a unit on Photovoltaics for the Open University (UK).
Professor Arthur Willoughby is currently Professor Emeritus at the University of Southampton having retired from Southampton after many years teaching. He holds a BSc and PhD in Engineering, both from Imperial College, and was head of Engineering Materials at Southampton for more than 10 years. With research interests focussed around semiconductor materials, Arthur Willoughby is founding editor of Journal of Materials Science: Materials in Electronics for Springer as well as principal editor for Materials Letters for Elsevier. He has written multiple journal articles as well as book chapters for Springer and MRS, and is a series editor for the Wiley Series in Materials for Electronic and Optoelectronic Applications.
Content
Series Preface xiii
List of Contributors xv
1 Introduction 1 Gavin Conibeer and Arthur Willoughby
1.1 Introduction 1
1.2 The Sun 1
1.3 Book Outline 3
References 4
2 Fundamental Physical Limits to Photovoltaic Conversion 5 J.F. Guillemoles
2.1 Introduction 5
2.2 Thermodynamic Limits 8
2.2.1 The Sun is the Limit 9
2.2.2 Classical Thermodynamics Analysis of Solar Energy Conversion 10
2.3 Limitations of Classical Devices 12
2.3.1 Detailed Balance and Main Assumptions 13
2.3.2 p-n Junction 14
2.3.3 The Two-Level System Model 17
2.3.4 Multijunctions 19
2.4 Fundamental Limits of Some High-Efficiency Concepts 22
2.4.1 Beyond Unity Quantum Efficiency 23
2.4.2 Beyond Isothermal Conversion: Hot-Carrier Solar Cells (HCSC) 29
2.4.3 Beyond the Single Process/ Photon: Photon Conversion 32
2.5 Conclusion 33
Note 33
References 33
3 Physical Characterisation of Photovoltaic Materials 35 Daniel Bellet and Edith Bellet-Amalric
3.1 Introduction 35
3.2 Correspondence between Photovoltaic Materials Characterisation Needs and Physical Techniques 35
3.3 X-Ray Techniques 36
3.3.1 X-Ray Diffraction (XRD) 37
3.3.2 Grazing-Incidence X-Ray Diffraction (GIXRD) 40
3.3.3 X-Ray Reflectivity (XRR) 42
3.3.4 Other X-Ray Techniques 44
3.4 Electron Microscopy Methods 45
3.4.1 Electron-Specimen Interactions and Scanning Electron Microscopy (SEM) 48
3.4.2 Electron Backscattering Diffraction (EBSD) 49
3.4.3 Transmission Electron Microscopy (TEM) 51
3.4.4 Electron Energy Loss Spectroscopy (EELS) 52
3.5 Spectroscopy Methods 53
3.5.1 X-Ray Photoelectron Spectroscopy (XPS) 53
3.5.2 Secondary Ion Mass Spectrometry (SIMS) 55
3.5.3 Rutherford Backscattering Spectrometry (RBS) 56
3.5.4 Raman Spectroscopy 56
3.5.5 UV-VIS-NIR Spectroscopy 58
3.6 Concluding Remarks and Perspectives 59
Acknowledgements 60
References 60
4 Developments in Crystalline Silicon Solar Cells 65 Martin A. Green
4.1 Introduction 65
4.2 Present Market Overview 66
4.3 Silicon Wafers 67
4.3.1 Standard Process 67
4.3.2 Multicrystalline Silicon Ingots 70
4.3.3 Ribbon Silicon 71
4.4 Cell Processing 73
4.4.1 Screen-Printed Cells 73
4.4.2 Buried-Contact and Laser Doped, Selective-Emitter Solar Cells 76
4.4.3 HIT Cell 77
4.4.4 Rear-Contact Cell 78
4.4.5 PERL Solar Cell 79
4.5 Conclusion 82
Acknowledgements 82
References 82
5 Amorphous and Microcrystalline Silicon Solar Cells 85 R.E.I. Schropp
5.1 Introduction 85
5.2 Deposition Methods 87
5.2.1 Modifications of Direct PECVD Techniques 88
5.2.2 Remote PECVD Techniques 89
5.2.3 Inline HWCVD Deposition 91
5.3 Material Properties 91
5.3.1 Protocrystalline Silicon 92
5.3.2 Microcrystalline or Nanocrystalline Silicon 93
5.4 Single-Junction Cell 96
5.4.1 Amorphous (Protocrystalline) Silicon Cells 98
5.4.2 Microcrystalline (µc-Si:H) Silicon Cells 99
5.4.3 Higher Deposition Rate 101
5.5 Multijunction Cells 102
5.6 Modules and Production 103
Acknowledgments 106
References 106
6 III-V Solar Cells 113 N.J. Ekins-Daukes
6.1 Introduction 113
6.2 Homo- and Heterojunction III-V Solar Cells 115
6.2.1 GaAs Solar Cells 117
6.2.2 InP Solar Cells 120
6.2.3 InGaAsP 121
6.2.4 GaN 121
6.3 Multijunction Solar Cells 122
6.3.1 Monolithic Multijunction Solar Cells 123
6.3.2 Mechanically Stacked Multijunction Solar Cells 129
6.4 Applications 131
6.4.1 III-V Space Photovoltaic Systems 131
6.4.2 III-V Concentrator Photovoltaic Systems 132
6.5 Conclusion 134
References 134
7 Chalcogenide Thin-Film Solar Cells 145 M. Paire, S. Delbos, J. Vidal, N. Naghavi and J.F. Guillemoles
7.1 Introduction 145
7.2 CIGS 148
7.2.1 Device Fabrication 148
7.2.2 Material Properties 162
7.2.3 Device Properties 171
7.2.4 Outlook 181
7.3 Kesterites 185
7.3.1 Advantages of CZTS 185
7.3.2 Crystallographic and Optoelectronic Properties 187
7.3.3 Synthesis Strategies 190
Acknowledgements 196
References 196
8 Printed Organic Solar Cells 217 Claudia Hoth, Andrea Seemann, Roland Steim, Tayebeh Ameri, Hamed Azimi and Christoph J. Brabec
8.1 Introduction 217
8.2 Materials and Morphology 218
8.2.1 Organic Semiconductors 219
8.2.2 Control of Morphology in oBHJ Solar Cells 224
8.2.3 Monitoring Morphology 233
8.2.4 Numerical Simulations of Morphology 235
8.2.5 Alternative Approaches to Control the Morphology 235
8.3 Interfaces in Organic Photovoltaics 237
8.3.1 Origin of Voc 237
8.3.2 Determination of Polarity-Inverted and Noninverted Structure 238
8.3.3 Optical Spacer 239
8.3.4 Protection Layer between the Electrode and the Polymer 240
8.3.5 Selective Contact 240
8.3.6 Interface Material Review for OPV Cells 240
8.4 Tandem Technology 243
8.4.1 Theoretical Considerations 243
8.4.2 Review of Experimental Results 248
8.4.3 Design Rules for Donors in Bulk-Heterojunction Tandem Solar Cells 255
8.5 Electrode Requirements for Organic Solar Cells 257
8.5.1 Materials for Transparent Electrodes 258
8.5.2 Materials for Nontransparent Electrodes 263
8.6 Production of Organic Solar Cells 265
8.7 Summary and Outlook 273
References 273
9 Third-Generation Solar Cells 283 Gavin Conibeer
9.1 Introduction 283
9.2 Multiple-Energy-Level Approaches 285
9.2.1 Tandem Cells 285
9.2.2 Multiple-Exciton Generation (MEG) 291
9.2.3 Intermediate-Band Solar Cells (IBSC) 293
9.3 Modification of the Solar Spectrum 294
> 1 294
9.3.2 Upconversion of Below-Bandgap Photons 297
9.4 Thermal Approaches 302
9.4.1 Thermophotovoltaics (TPV) 303
9.4.2 Thermophotonics 303
9.4.3 Hot-Carrier Cells 303
9.5 Other Approaches 308
9.5.1 Nonreciprocal Devices 308
9.5.2 Quantum Antennae - Light as a Wave 308
9.6 Conclusions 309
Acknowledgements 309
References 310
Concluding Remarks 315 Gavin Conibeer and Arthur Willoughby
Index 319
2
Fundamental Physical Limits to Photovoltaic Conversion
J.F. Guillemoles
Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), France
2.1 INTRODUCTION
Where to stop the quest for better devices? What does better mean? The conversion efficiency arises prominently in this respect.
More efficient devices, everything kept equal, would first translate into cheaper solar electricity. Are there limits to reducing the cost of PV electricity? In 2012, modules were sold 0.5–0.7 €/W and the cost of solar electricity is around 20 cts/kWh. In the longer term, development of photovoltaics (PV) has to be based on a major technological breakthrough regarding the use of processes and materials at very low cost, or/and on the engineering of devices offering far higher performance, harvesting most of the available solar energy. Two approaches are targeted at this issue today: the first aims at low-cost materials and low-cost processes to reduce the surface cost of PV devices, possibly sacrificing some of the device efficiency, and the second, aiming at the maximal possible efficiency, at the same cost as today's modules (see Figure 2.1). There is a major difference between these two approaches: the conversion concepts, the materials and the processes.
Figure 2.1 Relation of the cost per watt of solar energy to the surface cost of manufacturing solar devices (modules) and the device efficiency. The light gray, dark gray, and white oval regions represent the ranges found for crystalline silicon (first-), thin-film (second-), and third-generation solar technologies, respectively. The white zone marks the anticipated range for very high efficiency devices. For comparison, limiting efficiencies derived from thermodynamic constraints are also indicated as horizontal bands (low range: no concentration, high range: maximal concentration). Stars indicate industrial production costs as they could be estimated in 2010 from available data: filled stars for c-Si modules and hollow stars for thin-film technologies. (Adapted with permission from Green, 2003. Copyright © 2003, Springer.)
If we think in terms of the manufacturing costs of PV modules, the target aimed at requires that the system needs to produce 1 MWh (comprising about 0.2 m2 of high-end c-Si modules lasting 25 yr) cost less than €30 for parity with the base load or €120 for grid parity. For a very low-cost device, for instance based on polymers or organic–inorganic hybrids, with an expectation for conversion efficiencies on a par with those achieved by the amorphous Si line (on the grounds of similar structural disorder and a low carrier mobility) and shorter life durations, the budget is €7.5/m2 (5-year life duration with 5% efficiency, including power electronics and installation), closer to the cost of structural materials than of functional electronic materials. Finally, for profitable electricity production, we need to pay attention to the system costs. Thus, one sees that it might be extremely difficult to attempt to reduce production costs far beyond what is currently being obtained with inorganic thin-film systems.
This chapter will deal with the scientific issues behind the photovoltaic conversion process, keeping in mind what would make a difference to having this technology more widely used.
The first of these questions is of course the efficiency of the processes. Since the appearance of the first PV devices, the question of the conversion efficiency limits arose, and for a good reason: not only does it have high scientific and technological visibility, it is also one of the major factors in lowering the cost of generating solar electricity. Interestingly, this question of efficiency limit took quite a bit of time before being settled [Landsberg and Badescu, 1998].
The paper of Schockley and Queisser, devising an approach based on a detailed balance approach of photovoltaic conversion is still one of the most quoted papers on PV, yielding the limit of single-junction, standard PV devices.
This question has also been approached on a more general basis, using thermodynamics (Landsberg and Tonge, 1980, Parrott 1992, De Vos 1992) to give device-independent or even process-independent limits (Section 2.1). These limits are essentially related to the source (the sun) characteristics and to the conditions of use (e.g. ambient temperature). Perhaps more useful, and practical, limits have been proposed for defined processes.
In very general terms, photovoltaic conversion in its simpler form supposes several steps:
1. solar photon transferred to the active part of the system; 2. absorption of the photons and energy transfer to the electronic system; 3. selective extraction of electrons to contacts (2 at least); 4. channelling of e-free energy to useful load whose impedance is adjusted.These steps are illustrated in Figure 2.2 and describe PV process as it is working in all working devices, with nonessential modifications for organic PV (in which electron and holes are coupled as excitons) and multijunction cells (where the incident spectrum on a cell is a part of the total solar spectrum).
Figure 2.2 Photovoltaic action proceeds in 3 steps. (a) photons have to be collected and coupled to the converting system; (b) the converting systems contains occupied (VB) and empty states (CB) separated by a gap between which light induces transitions are allowed; (c) upon photon absorption, two populations of charge carriers are created; (d).
In this process, the work per absorbed photon is equal to the electromotive force between the electrodes (i.e. the voltage) times the elementary charge, that is the difference in the quasi-Fermi levels in the two contacts. In the absence of current extraction and when the mobility is high enough this quasi Fermi level (QFL) separation is that of electrons and holes in the absorber (see Section 2.4 for a more complete discussion).
Because the QFL is generated by the incoming flux, it increases with the light flux. This can also be understood as a larger generation rate per unit volume will create a larger density of electron–holes pairs, and therefore a higher conduction-band electron QFL and a lower valence-band electron QFL (that is a larger chemical potential of holes in the VB). This large QFL separation can be obtained in different ways, everything else being equal:
– by decreasing the recombination pathways for photogenerated carriers, for instance increasing the carrier lifetime; – by increasing the generation of electron–hole pairs, for instance by concentration of the incident solar influx; – by decreasing the generation volume, for instance by thinning down the cells, which requires light trapping to keep the total generation constant.A large chemical potential can be seen as a large partial pressure: this helps the extraction of generated carriers and therefore a larger free energy per carrier can be collected, whereas, whatever the concentration of electron–hole pairs, their potential energy is always the same, near Eg. The collection of carriers depends on the chemical potential of the carriers in the contacts, that is, in fine, of the external conditions, and for instance the load into which the solar cell will deliver power.
The maximum power is delivered when the load impedance matches the differential impedance of the generator (as is true by the way for any generator).
Indeed, if the device has a current–voltage characteristic I(V), the power is maximum for
this yields:
(2.2)
which is the relation announced.
The current at V=0 (short-circuit) is noted Isc, while the voltage at I=0 (open circuit) is noted Voc.
One can write a relation such that:
(2.3)
where η is the efficiency, Pinc, the solar incident power and FF, the fill factor, is a number close to 0.85 and slowly dependent on the working point for an ideal cell.
Importantly, each carrier has to be collected at a specific contact, that is, ideally, the contact should be selective for one of the carriers, and prevent collection from the other. Selective contacts usually take the form of barriers for one of the contacts, as for instance in a p/n junction.
There are general relationships based on thermodynamics that fundamentally limit the efficiency of conversion of light into work. They have been discussed extensively in the literature and are presented in Section 2.2.
Photovoltaic conversion, as sketched in Figure 2.2, starts with a good coupling between the conversion device and the sun. We therefore start to explore limits to photon management. This limit is essentially given by the 2nd thermodynamic principle: a PV device does not become hotter than the sun (Section 2.2). It is then important to know how good the absorption of the material can be as this determines the dimensions and geometry of the device as its thickness has to be the best compromise between being
– large enough so that light is efficiently absorbed; – small enough so that excited carriers are transported to the...System requirements
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