
An Introduction to Surface Analysis by XPS and AES
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This accessible second edition of the bestselling book, An Introduction to Surface Analysis by XPS and AES, 2nd Edition explores the basic principles and applications of X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) techniques. It starts with an examination of the basic concepts of electron spectroscopy and electron spectrometer design, followed by a qualitative and quantitative interpretation of the electron spectrum.
Chapters examine recent innovations in instrument design and key applications in metallurgy, biomaterials, and electronics. Practical and concise, it includes compositional depth profiling; multi-technique analysis; and everything about samples--including their handling, preparation, stability, and more. Topics discussed in more depth include peak fitting, energy loss background analysis, multi-technique analysis, and multi-technique profiling. The book finishes with chapters on applications of electron spectroscopy in materials science and the comparison of XPS and AES with other analytical techniques.
* Extensively revised and updated with new material on NAPXPS, twin anode monochromators, gas cluster ion sources, valence band spectra, hydrogen detection, and quantification
* Explores key spectroscopic techniques in surface analysis
* Provides descriptions of latest instruments and techniques
* Includes a detailed glossary of key surface analysis terms
* Features an extensive bibliography of key references and additional reading
* Uses a non-theoretical style to appeal to industrial surface analysis sectors
An Introduction to Surface Analysis by XPS and AES, 2nd Edition is an excellent introductory text for undergraduates, first-year postgraduates, and industrial users of XPS and AES.
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Persons
John F. Watts FREng is Professor of Materials Science in the Department of Mechanical Engineering Sciences at the University of Surrey. He currently leads a Research Group applying surface analysis methods to investigations in materials science and is Editor-in-Chief of the Wiley journal Surface and Interface Analysis.
John Wolstenholme is now retired, having worked for Thermo Fisher Scientific (formally VG Scientific) for over 28 years in roles such as sales, marketing and applications. He remains as an active participant on the ISO Technical Committee 201, developing and revising International Standards relevant to electron spectroscopy.
Content
Preface to First Edition xi
Preface to Second Edition xiii
Acknowledgements xvii
1 Electron Spectroscopy: Some Basic Concepts 1
1.1 Analysis of Surfaces 1
1.2 Notation 3
1.2.1 Spectroscopists' Notation 3
1.2.2 X-ray Notation 4
1.3 X-ray Photoelectron Spectroscopy 4
1.4 Auger Electron Spectroscopy (AES) 8
1.5 Scanning Auger Microscopy 12
1.6 The Depth of Analysis in Electron Spectroscopy 13
1.7 Comparison of XPS and AES/SAM 16
1.8 The Availability of Surface Analytical Equipment 17
2 Electron Spectrometer Design 19
2.1 Introduction 19
2.2 The Vacuum System 19
2.3 X-ray Sources for XPS 22
2.3.1 Choice of X-ray Anode 23
2.3.2 X-ray Monochromators 27
2.3.3 Synchrotron Sources 30
2.4 The Electron Gun for AES 31
2.4.1 Electron Sources 31
2.4.1.1 Thermionic Emitter 32
2.4.1.2 Lanthanum Hexaboride Emitter 32
2.4.1.3 Cold Field Emitter 32
2.4.1.4 Hot Field Emitter 33
2.4.1.5 Comparison of Electron Emitters for AES 34
2.4.2 The Electron Column 35
2.4.3 Spot Size 35
2.5 Analysers for Electron Spectroscopy 37
2.5.1 The Cylindrical Mirror Analyser 38
2.5.2 The Hemispherical Sector Analyser 41
2.5.2.1 CAE Mode of Operation 42
2.5.2.2 CRR Mode of Operation 44
2.5.2.3 Comparison of CAE and CRR Modes 46
2.5.2.4 The Transfer Lens 47
2.5.3 Calibration of the Electron Spectrometer Energy Scale 48
2.6 Near Ambient Pressure XPS 49
2.7 Detectors 52
2.7.1 Channel Electron Multipliers 52
2.7.2 Microchannel Plates 54
2.7.3 Two-Dimensional Detectors 54
2.7.3.1 The Resistive-Anode Detector 55
2.7.3.2 The Delay-Line Detector 55
2.8 Small Area XPS 56
2.8.1 Lens-Defined Small Area XPS 56
2.8.2 Source-defined Small Area Analysis 57
2.9 XPS Imaging and Mapping 57
2.9.1 Serial Acquisition 58
2.9.2 Parallel Acquisition 59
2.9.2.1 Parallel Imaging Using a Hemispherical Spectrometer 59
2.9.2.2 Parallel Imaging Using a Spherical Mirror Analyser 60
2.9.2.3 Spatial Resolution and Chemical Imaging 61
2.10 Angle Resolved XPS 64
2.11 Automation 66
3 The Electron Spectrum: Qualitative and Quantitative Interpretation 69
3.1 Introduction 69
3.2 Qualitative Analysis 69
3.2.1 Unwanted Features in Electron Spectra 72
3.2.2 Data Acquisition 72
3.2.2.1 Core Level Spectra 72
3.2.2.2 Valence Band Spectra 73
3.3 Chemical State Information 74
3.3.1 X-ray Photoelectron Spectroscopy 74
3.3.2 Peak Fitting of XPS Spectra 78
3.3.3 Auger Electron Spectroscopy 81
3.3.4 X-AES 82
3.3.5 Chemical State Plots 84
3.3.6 Shakeup Satellites 86
3.3.7 Multiplet Splitting 87
3.3.8 Plasmons 87
3.4 Quantitative Analysis 88
3.4.1 Quantification in XPS 89
3.4.1.1 Calculating Atomic Concentration 89
3.4.1.2 Measuring Peak Intensity 92
3.4.2 Quantification in AES 94
4 Compositional Depth Profiling 97
4.1 Introduction 97
4.2 Non-destructive Depth Methods 98
4.2.1 Measurements at a Single Emission Angle 98
4.2.2 Angle Resolved XPS Measurements 99
4.2.3 Measurement of Overlayer Thickness Using ARXPS 101
4.2.4 Elastic Scattering 103
4.2.5 Multilayer Thickness Calculations Using ARXPS 104
4.2.6 Compositional Depth Profiles from ARXPS Measurements 107
4.2.7 Variation of Analysis Depth with Electron Kinetic Energy 110
4.2.8 Background Analysis 112
4.3 Depth Profiling by Sputtering with Energetic Ions 115
4.3.1 The Sputtering Process 115
4.3.2 Experimental Method 116
4.3.3 The Nature of the Ion Beam 118
4.3.3.1 Noble Gas Ions 118
4.3.3.2 Cluster Ions 119
4.3.3.3 Metal Ions 121
4.3.4 Sputter Yield and Etch Rate 122
4.3.5 Factors Affecting the Etch Rate 123
4.3.5.1 Material 123
4.3.5.2 Ion Current 123
4.3.5.3 Ion Energy 123
4.3.5.4 Nature of the Ion Beam 124
4.3.5.5 Angle of Incidence 124
4.3.6 Factors Affecting the Depth Resolution 124
4.3.6.1 Ion Beam Characteristics 124
4.3.6.2 Crater Quality 125
4.3.6.3 Beam Impurities 125
4.3.6.4 Information Depth 126
4.3.6.5 Original Surface Roughness 127
4.3.6.6 Induced Roughness 127
4.3.6.7 Preferential Sputtering 127
4.3.6.8 Redeposition of Sputtered Material 128
4.3.7 Calibration 128
4.3.8 Ion Gun Design 128
4.3.8.1 Electron Impact Ion Guns 128
4.3.8.2 Argon-Cluster Ion Guns 129
4.3.8.3 Liquid Metal Ion Guns 131
4.4 Sectioning 131
4.4.1 FIB Sectioning 131
4.4.2 Angle Lapping 132
4.4.3 Ball Cratering 133
5 Multi-technique Analysis 135
5.1 Introduction 135
5.2 Ultraviolet Photoelectron Spectroscopy (UPS) 135
5.3 Low Energy Ion Scattering Spectroscopy (LEISS) 137
5.4 Reflection Electron Energy Loss Spectroscopy (REELS) 139
5.4.1 Elastic Scattering 140
5.4.2 Inelastic Scattering 141
5.5 Work Function Measurements 142
5.6 Energy Dispersive X-ray Analysis (EDX) 143
6 The Sample 145
6.1 Sample Handling 145
6.2 Sample Preparation 147
6.3 Sample Mounting 149
6.4 Sample Stability 149
6.5 Contamination and Damage During Analysis 151
6.6 Controlling Sample Charging 152
6.6.1 Sample Charging in XPS 152
6.6.2 Sample Charging in AES 154
7 Applications of Electron Spectroscopy in Materials Science 157
7.1 Introduction 157
7.2 Metallurgy 157
7.2.1 Grain Boundary Segregation 158
7.2.2 Electronic Structure of Metallic Alloys 160
7.2.3 Surface Engineering 163
7.3 Corrosion Science 168
7.4 Ceramics 176
7.5 Microelectronics and Semiconductor Materials 181
7.5.1 Mapping Semiconductor Devices Using AES 182
7.5.2 XPS Failure Analysis of Microelectronic Devices 186
7.5.3 Depth Profiling of Semiconductor Materials 188
7.5.3.1 Transistor Gate Dielectrics 188
7.5.3.2 Inorganic Chemical State Profiling 189
7.5.3.3 Organic Semiconductor Profiling 190
7.6 Polymeric Materials 193
7.7 Adhesion Science 202
7.8 Nanotechnology 210
7.9 Biology 215
7.10 Energy 219
8 Comparison of XPS and AES with Other Analytical Techniques 223
Glossary 229
Bibliography 239
Appendix 1 247
Auger Electron Energies 247
Appendix 2 249
Table of Binding Energies Accessible with Al Ka Radiation 250
Appendix 3 255
Documentary Standards in Surface Analysis 255
The Scope of TC201 255
The Purpose of TC201 255
International Standards Relevant to Electron Spectroscopies 256
Index 259
1
Electron Spectroscopy: Some Basic Concepts
1.1 Analysis of Surfaces
All solid materials interact with their surroundings through their surfaces. The physical and chemical composition of these surfaces determine the nature of the interactions. Their surface chemistry will influence such factors as corrosion rates, catalytic activity, adhesive properties, wettability, contact potential, failure mechanisms, etc. Surfaces, therefore, influence many crucially important properties of the solid.
Despite the undoubted importance of surfaces, only a very small proportion of the atoms of most solids are found at the surface. Consider, for example, a 1 cm cube of a typical transition metal (e.g. nickel). The cube contains about 9 × 1022 atoms of which about 6 × 1015 are at the surface. The proportion of surface atoms is therefore approximately 1 in 108 or 10 ppb. If we want to detect impurities at the nickel surface at a concentration of 0.1% then we need to detect materials at a concentration level of 0.01 ppb within the cube. The exact proportion of atoms at the surface will depend upon the shape and surface roughness of the material as well as its composition. The above figures simply illustrate that a successful technique for analysing surfaces must have at least two characteristics:
- It must be extremely sensitive.
- It must be efficient at filtering out signal from the vast majority of the atoms present in the sample.
This book is largely concerned with X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). As will be shown, each of these techniques has the required characteristics but, in addition, they can answer other important questions:
- Which elements are present in the near-surface region of a solid?
- Which chemical states of these elements are present?
- How much of each chemical state of each element is present?
- What is the spatial distribution of the materials in the near surface region in three-dimensions and how does that vary with time?
- If material is present as a thin film at the surface:
- How thick is the film?
- How uniform is the thickness?
- How uniform is the chemical composition of the film?
In electron spectroscopy, we are concerned with the emission and energy analysis of low energy electrons, usually in the range 20-2000 eV1 (the use of X-ray anodes that generate X-rays having a photon energy much higher than 2000 eV is becoming more popular). These electrons are liberated from the sample being examined as a result of the photoemission process (in XPS) or the radiationless de-excitation of an ionised atom by the Auger emission process in AES and scanning Auger microscopy (SAM). The distinction between AES and SAM is worthy of consideration. AES is a broad term that implies excitation of Auger electrons using a beam of electrons but makes no claim to be a technique that features high spatial resolution. SAM, on the other hand, always makes use of a finely focussed electron beam, typically in the range 10-100 nm, and provides results in the form of spatially resolved images derived from Auger electron data.
In the simplest terms, an electron spectrometer consists of the sample under investigation, a source of primary radiation, and an electron energy analyser all contained within a vacuum chamber, preferably operating in the ultra-high vacuum (UHV) regime. In practice, there will often be a secondary UHV chamber fitted with various sample preparation facilities and perhaps ancillary analytical facilities. A data system will be used for data acquisition and subsequent processing. The source of the primary radiation for the two methods is different; XPS making use of soft X-rays, most commonly monochromated Al Ka X-rays, although a twin anode arrangement is still often used (the most popular being Al Ka combined with Mg Ka), whereas AES and SAM rely on the use of an electron gun. The specification for electron guns used in Auger analysis varies tremendously, particularly as far as the spatial resolution is concerned, which, for finely focused guns, may be between 5 µm and < 10 nm. In principle, the same energy analyser may be used for both XPS and AES; consequently, the two techniques are often to be found in the same analytical instrument.
Before considering the uses and applications of the two methods, it is helpful to review the physical principles of the two processes along with their strengths and weaknesses.
1.2 Notation
XPS and AES measure the energy of electrons emitted from a material. It is necessary therefore to have some formal way to describe which electrons are involved with each of the observed transitions. The notation used in XPS is different from that used in AES. XPS uses the so-called spectroscopists' or chemists' notation while Auger electrons are identified by the X-ray notation.
1.2.1 Spectroscopists' Notation
In this notation, the photoelectrons observed are described by means of their quantum numbers. Transitions are usually labelled according to the scheme nlj.
The first part of this notation is the principal quantum number, n. This takes integer values of 1, 2, 3, etc. The second part of the nomenclature, l, is the quantum number which describes the orbital angular momentum of the electron. This takes integer values 0, 1, 2, 3, etc. However, this quantum number is usually given a letter rather than a number as shown in Table 1.1.
Table 1.1 Notation given to the quantum numbers which describe orbital angular momentum.
Value of l Usual notation 0 s 1 p 2 d 3 fThe peaks in XPS spectra derived from orbitals whose angular momentum quantum number is greater than 0 are usually split into two. This is a result of the interaction of the electron angular momentum due to its spin with its orbital angular momentum. Each electron has a quantum number associated with its spin angular momentum2, s. The value of s can be either +½ or -½. The two angular momenta are added vectorially to produce the quantity j in the expression nlj, i.e. j = |l + s|. Thus, an electron from a p orbital can have a j value of ½ (l-s) or 3/2 (l + s); similarly, electrons from a d orbital can have j values of either 3/2 or 5/2. The relative intensity of the components of the doublets formed by the spin orbit coupling is dependent upon their relative populations (degeneracies) which are given by the expression (2j + 1) so, for an electron from a d orbital, the relative intensities of the 3/2 and 5/2 peaks are 2 : 3. The spacing between the components of the doublets depends upon the strength of the spin orbit coupling. For a given value of both n and l, the separation increases with the atomic number of the atom. For a given atom, it decreases both with increasing n and with increasing l.
1.2.2 X-ray Notation
In X-ray notation, the principal quantum numbers are given letters K, L, M, etc. while subscript numbers refer to the j values described above. The relationship between the notations is given in Table 1.2.
Table 1.2 The relationship between quantum numbers, spectroscopists' notation and X-ray notation.
Quantum numbers n l s Spectroscopy notation X-ray...System requirements
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