Multifunctional Oxide Heterostructures
1st Edition
Published on 29. August 2012
429 pages
978-0-19-164221-0 (ISBN)
Description
This book explores the rapidly developing field of oxide thin-films and heterostructures, which exhibit unusual physical properties interesting from the fundamental point of view and for device application. The chapters, written by world-recognized scientists, discuss topics that represent some of the key innovations in the field over recent years.
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Evgeny Y. Tsymbal | Elbio R. a. Dagotto | Chang-Beom Eom
Multifunctional Oxide Heterostructures
Book
08/2012
Oxford University Press
€138.40
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Content
- Cover
- Contents
- List of contributors
- PART I: FUNDAMENTALS
- 1 A brief introduction to strongly correlated electronic materials
- 1.1 Motivation
- 1.2 Introduction
- 1.3 Why correlated electrons?
- 1.4 Control of correlated electrons in complex oxides
- 1.5 Ordering of charge, spin, and orbital degrees of freedom
- 1.6 Model Hamiltonians
- 1.7 Intrinsically inhomogeneous states
- 1.8 Giant responses in correlated electron systems
- 1.9 Importance of quenched disorder and strain
- 1.10 Outlook for correlated-electron technology: spintronics, double perovskites, multiferroics, orbitronics, resistance switching
- 1.11 Conclusions
- Acknowledgments
- References
- 2 Magnetoelectric coupling and multiferroic materials
- 2.1 Introduction: magnetoelectric coupling and multiferroic materials
- 2.2 Magnetoelectric coupling
- 2.3 Magnetoelectric multiferroics
- Appendix 2.1 Magnetoelectric measurements
- Appendix 2.2 Critical exponents in isostructural phase transitions
- References
- PART II: OXIDE FILMS AND INTERFACES: GROWTH AND CHARACTERIZATION
- 3 Synthesis of epitaxial multiferroic oxide thin films
- 3.1 Introduction
- 3.2 Substrates
- 3.3 Strain engineering as a tool for controlling functional oxide thin films
- 3.4 Vicinal control of functional properties
- 3.5 Conclusions
- Acknowledgments
- References
- 4 Synchrotron X-ray scattering studies of oxide heterostructures
- 4.1 Introduction
- 4.2 Surface X-ray diffraction
- 4.3 Resonant scattering
- 4.4 Anisotropic effects
- 4.5 Summary
- Acknowledgments
- References
- 5 Scanning transmission electron microscopy of oxides
- 5.1 Introduction to STEM
- 5.2 STEM imaging
- 5.3 Mapping materials properties through EELS fine structure
- 5.4 Applications: interfaces in manganite/cuprate heterostructures
- 5.5 Summary
- Acknowledgments
- References
- 6 Advanced modes of piezoresponse force microscopy for ferroelectric nanostructures
- 6.1 Introduction
- 6.2 Ferroelectric structures and size effects
- 6.3 Advanced modes of PFM
- 6.4 Summary
- Acknowledgments
- References
- PART III: OXIDE FILMS AND INTERFACES: FUNCTIONAL PROPERTIES
- 7 General considerations of the electrostatic boundary conditions in oxide heterostructures
- 7.1 Introduction
- 7.2 The polar discontinuity picture
- 7.3 Metallic conductivity between two insulators
- 7.4 The local charge neutrality picture
- 7.5 Equivalence of the two pictures
- 7.6 Further discussions
- 7.7 Summary
- Acknowledgments
- References
- 8 Strongly correlated heterostructures
- 8.1 Introduction
- 8.2 Theoretical description
- 8.3 Mott-insulator/band-insulator heterostructures
- 8.4 Superlattices of under-doped-cuprate/over-doped-cuprate
- 8.5 Other directions
- 8.6 Summary
- Acknowledgments
- References
- 9 Manganite multilayers
- 9.1 Motivation
- 9.2 Introduction to manganites
- 9.3 Theoretical description of manganite multilayers
- 9.4 Synthesis and structure of manganite multilayers
- 9.5 Recent progress on manganite multilayers
- 9.6 Conclusions and outlook
- Acknowledgments
- References
- 10 Thermoelectric oxides: films and heterostructures
- 10.1 Introduction
- 10.2 p-type layered cobalt oxide: Ca[sub(3)]Co[sub(4)]O[sub(9)] films
- 10.3 Heavily electron doped SrTiO[sub(3)] films
- 10.4 Two-dimensional electron gas
- 10.5 Field effect thermopower modulation
- 10.6 Summary
- References
- PART IV: APPLICATIONS
- 11 High-? gate dielectrics for advanced CMOS
- 11.1 Introduction
- 11.2 High-? dielectric materials
- 11.3 Metal-gate electrodes
- 11.4 High-?/metal-gate silicon FETs
- 11.5 High-?/metal-gate nonsilicon FETs
- Acknowledgments
- References
- 12 FeFET and ferroelectric random access memories
- 12.1 Overview of ferroelectric random access memories (FeRAMs)
- 12.2 Ferroelectric films used for FeRAMs
- 12.3 Cell structure and operation principle of capacitor-type FeRAMs
- 12.4 Cell structure and operation principle of FET-type FeRAMs
- References
- 13 LaAlO[sub(3)]/SrTiO[sub(3)]-based device concepts
- 13.1 Introduction
- 13.2 Field-effect devices
- 13.3 Reconfigurable nanoscale devices
- 13.4 Future prospects
- References
- Index
- A
- B
- C
- D
- E
- F
- G
- H
- I
- J
- K
- L
- M
- N
- O
- P
- Q
- R
- S
- T
- U
- V
- W
- X
- Y
- Z
