Strain-Induced Effects in Advanced MOSFETs
1st Edition
Published on 6. January 2011
XIV, 252 pages
978-3-7091-0382-1 (ISBN)
Description
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
More details
Series
Language
English
Place of publication
Vienna
Austria
Publishing group
Springer Wien
Target group
Professional and scholarly
Product notice
Reflowable
Illustrations
XIV, 252 p. 101 illus.
File size
7,06 MB
ISBN-13
978-3-7091-0382-1 (9783709103821)
DOI
10.1007/978-3-7091-0382-1
Schweitzer Classification
Other editions
Additional editions
Viktor Sverdlov
Strain-Induced Effects in Advanced MOSFETs
Book
11/2010
Springer
€160.49
Shipment within 10-15 days
Content
1 Introduction
2 Scaling, Power Consumption, and Mobility Enhancement Techniques
3 Strain and Stress
4 Basic Properties of the Silicon Lattice
5 Band Structure of Relaxed Silicon
6 Perturbative Methods for Band Structure Calculations in Silicon
7 Strain Effects on the Silicon Crystal Structure
8 Strain Effects on the Silicon Band Structure
9 Strain Effects on the Conduction Band of Silicon
10 Electron Subbands in Silicon in the Effective Mass Approximation
11 Electron Subbands in Thin Silicon Films
12 Demands of Transport Modeling in Advanced MOSFETs
