Random Telegraph Signals in Semiconductor Devices 2016
Published on 1. November 2016
215 pages
978-0-7503-1272-1 (ISBN)
Description
Following their first observation in small area silicon MOSFETs in 1984, Random Telegraph Signals were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. However, as devices move to the nanometer scale, particularly memory devices and logic circuits, and in the development of alternatives to silicon MOSFETS, random telegraph signals have become an issue of major concern to the semiconductor industry. Moreover, following the move to the nanoscale, the devices will become more susceptible to single-trap random telegraph signal effects. It is clear that the successors to planar silicon transistors, including nanowire devices, tunnel field effect transistors, and carbon nanotubes are equally sensitive or even more so than current CMOS devices. It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single trap phenomema, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up to date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of random telegraph signals to applied technology.
More details
Series
Language
English
Place of publication
Bristol
United Kingdom
Publishing group
Taylor & Francis Ltd
Target group
College/higher education
Edition type
Digital original
Illustrations
150 black and white and colour.
ISBN-13
978-0-7503-1272-1 (9780750312721)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions
Eddy Simoen | Cor Claeys
Random Telegraph Signals in Semiconductor Devices
Book
11/2016
Institute of Physics Publishing
€152.50
Shipment within 10-20 days
Eddy Simoen | Cor Claeys
Random Telegraph Signals in Semiconductor Devices
Book
11/2016
Institute of Physics Publishing
€50.95
No shipping information available
Persons
Eddy Simoen is Senior Researcher at imec and Professor at Ghent University, Belgium.Cor Claeys is Director of Advanced Semiconductor Technologies at imec, and Professor at KU Leuven, Belgium
Content
1) Introduction 2) RTS phenomenology a. RTS time constants i. Shockley-Read-Hall framework ii. Trap energy, capture barrier and location from SRH approachiii. Non SRH behavior: Coulomb blockade effects iv. Tunneling transitions b. RTS amplitude behavior c. RTS in the gate current of a MOS device d. RTS in the junction leakage current of a MOSFETe. Multiple and complex RTS3) RTS modeling, simulation and parameter extractiona. Time constant modeling and simulationb. Extraction trap position from RTN time constantsc. RTS amplitude modellingd. Atomistic numerical modeling of the RTS amplitudee. Novel measurement and analysis methodsf. Ab initio modeling of RTS in gate dielectrics4) Impact device processing and scaling on RTS a. Processing effects on RTS b. RTS in fin-type architectures c. Nanometric scaling aspects of RTSi. Scaling trend RTS amplitude ii. Silicon Gate-All-Around Nanowiresiii. High-mobility channel materialsiv. RTS in Tunnel FETsd. RTS in "beyond-silicon" devices i. Carbon Nanotubes (CNT) FETs ii. Other advanced devices 5) Operational and Reliability aspects of RTS a. Switching AC operation of RTS b. Impact of uniform and hot-carrier degradation c. BTI and RTS: oxide trapping?d. Statistical RTS measurement methodse. Device and circuit simulation of dynamic variability 6) RTS in memory and imager circuits a. RTS in Flash and SRAM cellsb. RTS in DRAM and logic circuitsc. RTS in novel ReRAM and PC memoriesd. RTS in CMOS Imagers and CCDs
