Technology Computer Aided Design
Simulation for VLSI MOSFET
1st Edition
Published on 3. September 2018
462 pages
978-1-4665-1266-5 (ISBN)
Description
Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus.
* Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits
* Introduces the advantages of TCAD simulations for device and process technology characterization
* Presents the fundamental physics and mathematics incorporated in the TCAD tools
* Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus)
* Provides characterization of performances of VLSI MOSFETs through TCAD tools
* Offers familiarization to compact modeling for VLSI circuit simulation
R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
* Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits
* Introduces the advantages of TCAD simulations for device and process technology characterization
* Presents the fundamental physics and mathematics incorporated in the TCAD tools
* Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus)
* Provides characterization of performances of VLSI MOSFETs through TCAD tools
* Offers familiarization to compact modeling for VLSI circuit simulation
R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
Reviews / Votes
"A unique book combines both device and process simulation so far as I know. It combines principle and practice together and thus is quite suitable for use in classroom or as a self-study reference. It exposes the reader to the realm of device and process simulation, a field being critical important in VLSI but not easily being accessible to the reader due to the lack of comprehensive material available. ... Yes, I would like to read this book. Even though I do not teach such a course directly, my yearly VLSI course indeed covers a chapter related to the VLSI manufacturing process and another to device modeling. This book definitely gives much more insight into these. It will give me a thorough understanding of these two important topics. ... Because of its uniqueness, this book would be most likely to have a successful market. ... A unique book combines both device and process simulation. It is an excellent resource for both the student and professional to these essential topics related to VLSI systems."--Ming-Bo Lin, Department of Electronic Engineering of National Taiwan University of Science and Technology, Taipei, Taiwan
"The materials provided bring up-to-date various aspects of TCAD simulation of VLSI MOSFETs, through providing an overview of TCAD software tools and the physical models included. It highlights the role and importance of TCAD tools in the development and prediction of VLSI MOS transistors' design, characterization and fabrication. The materials comprise detailed examples with source codes of different types of MOSFETs using Silvaco TCAD device simulation tools, illustrating the key aspects of Silvaco TCAD tools and showing its capability and effectiveness to understand the physical behavior and potential of a device structure. In addition, the book presents a comprehensive overview of compact modeling of MOS transistors for use in VLSI circuit simulation. This approach serves the purpose of the book which is to be tended for students of electrical and electronics engineering disciplines. The book is ideal for students and may also be used as a reference for researchers and professionals working in the area of electronic devices. ... I am confident that the materials presented serve the purpose of this book quite well, and provide the target audience with a good reference on TCAD Simulation for VLSI MOSFET. ... This book does an excellent job in providing the target audience with a comprehensive knowledge and the systematic approach for the design, characterization and fabrication of VLSI MOS transistors using TCAD tools. The book provides a practical and an easy way to gain an understanding of the fundamental physics and mathematics involved with TCAD tools. The book comprises detailed examples with source codes of different types of MOSFETs using TCAD device simulation tools so one can easily understand what is going on. Moreover, the book presents a comprehensive overview of compact modeling of MOS transistors for use in VLSI circuit simulation. If you are using or going to use TCAD software for VLSI MOSFET devices design and analysis, this is the book for you.""
--Dr. Mahmoud Al-Sa'di, Assistant Professor of Physics - Electronics, Berlin, Germany
"The editor is correct in the assessment that any course related to TCAD simulation introducing the 'IC chain' commercial tools has to be through user manuals which is not very practical for class room teaching. Therefore, there seems to be a strong case for a text which can navigate students/researchers/professionals through various simulation phases systematically illustrating simulation principles, TCAD tool usages with judiciously selected case studies. 2. The authors involved are mostly known users of TCAD tools of Silvaco and are therefore competent to undertake the task."
--Professor A. B. Bhattacharyya, Jaypee Institute of Information Technology, Noida, India "A unique book combines both device and process simulation so far as I know. It combines principle and practice together and thus is quite suitable for use in classroom or as a self-study reference. It exposes the reader to the realm of device and process simulation, a field being critical important in VLSI but not easily being accessible to the reader due to the lack of comprehensive material available. ... Yes, I would like to read this book. Even though I do not teach such a course directly, my yearly VLSI course indeed covers a chapter related to the VLSI manufacturing process and another to device modeling. This book definitely gives much more insight into these. It will give me a thorough understanding of these two important topics. ... Because of its uniqueness, this book would be most likely to have a successful market. ... A unique book combines both device and process simulation. It is an excellent resource for both the student and professional to these essential topics related to VLSI systems."
--Ming-Bo Lin, Department of Electronic Engineering of National Taiwan University of Science and Technology, Taipei, Taiwan
"The materials provided bring up-to-date various aspects of TCAD simulation of VLSI MOSFETs, through providing an overview of TCAD software tools and the physical models included. It highlights the role and importance of TCAD tools in the development and prediction of VLSI MOS transistors' design, characterization and fabrication. The materials comprise detailed examples with source codes of different types of MOSFETs using Silvaco TCAD device simulation tools, illustrating the key aspects of Silvaco TCAD tools and showing its capability and effectiveness to understand the physical behavior and potential of a device structure. In addition, the book presents a comprehensive overview of compact modeling of MOS transistors for use in VLSI circuit simulation. This approach serves the purpose of the book which is to be tended for students of electrical and electronics engineering disciplines. The book is ideal for students and may also be used as a reference for researchers and professionals working in the area of electronic devices. ... I am confident that the materials presented serve the purpose of this book quite well, and provide the target audience with a good reference on TCAD Simulation for VLSI MOSFET. ... This book does an excellent job in providing the target audience with a comprehensive knowledge and the systematic approach for the design, characterization and fabrication of VLSI MOS transistors using TCAD tools. The book provides a practical and an easy way to gain an understanding of the fundamental physics and mathematics involved with TCAD tools. The book comprises detailed examples with source codes of different types of MOSFETs using TCAD device simulation tools so one can easily understand what is going on. Moreover, the book presents a comprehensive overview of compact modeling of MOS transistors for use in VLSI circuit simulation. If you are using or going to use TCAD software for VLSI MOSFET devices design and analysis, this is the book for you.""
--Dr. Mahmoud Al-Sa'di, Assistant Professor of Physics - Electronics, Berlin, Germany
"The editor is correct in the assessment that any course related to TCAD simulation introducing the 'IC chain' commercial tools has to be through user manuals which is not very practical for class room teaching. Therefore, there seems to be a strong case for a text which can navigate students/researchers/professionals through various simulation phases systematically illustrating simulation principles, TCAD tool usages with judiciously selected case studies. 2. The authors involved are mostly known users of TCAD tools of Silvaco and are therefore competent to undertake the task."
--Professor A. B. Bhattacharyya, Jaypee Institute of Information Technology, Noida, India
More details
Edition
1. Auflage
Language
English
Place of publication
Baton Rouge
United States
Publishing group
Taylor & Francis Inc
Target group
College/higher education
Illustrations
253 s/w Abbildungen, 10 s/w Tabellen
10 Tables, black and white; 253 Illustrations, black and white
File size
20,48 MB
ISBN-13
978-1-4665-1266-5 (9781466512665)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions
Book
11/2017
1st Edition
CRC Press
€114.10
Shipment within 10-20 days
Book
05/2013
1st Edition
CRC Press
€326.83
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Person
Chandan Kumar Sarkar, is a professor of Electronics and Telecommunication, at Jadavpur University, Calcutta, India and a senior member of IEEE. He received B.Sc. (Hons.) and M.Sc. degrees in physics from Aligarh Muslim University, a Ph.D. degree in Radio Physics from the University of Calcutta, and the D.Phil degree from Oxford University. In 1980 Prof. Sarkar received the British Royal Commission Fellowship to work in Oxford University, worked as a visiting scientist in Max Planck Laboratory, Stuttgart, Germany as well as in Linko Pink University, Sweden. He has published more than 300 research papers for international journals and conferences.
Content
Introduction to Technology CAD. Basic Semiconductor and MOS Physics. Review of Numerical Methods for TCAD. Device Simulation Using ISE-TCAD. Device Simulation Using Silvaco ATLAS Tool. Study of Deep Submicron VLSI MOSFETs through TCAD. MOSFET Characterization for VLSI Circuit Simulation. Process Simulation of a MOSFET using TSUPREM-4 and MEDICI.
