Arbitrary Modeling of TSVs for 3D Integrated Circuits
1st Edition
Published on 21. August 2014
IX, 179 pages
978-3-319-07611-9 (ISBN)
Description
This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor and inductive-based communication system and bandpass filtering.
More details
Series
Language
English
Place of publication
Cham
Switzerland
Publishing group
Springer International Publishing
Target group
Professional and scholarly
Product notice
Reflowable
Illustrations
IX, 179 p. 159 illus., 99 illus. in color.
File size
12,37 MB
ISBN-13
978-3-319-07611-9 (9783319076119)
DOI
10.1007/978-3-319-07611-9
Schweitzer Classification
Other editions
Additional editions
Khaled Salah | Yehea Ismail | Alaa El-Rouby
Arbitrary Modeling of TSVs for 3D Integrated Circuits
Book
09/2014
Springer
€106.99
Shipment within 10-15 days
Content
Introduction: Work around Moore's Law.- 3D/TSV Enabling Technologies.- TSV Modeling and Analysis.- TSV Verification.- TSV Macro-Modeling Framework.- TSV Design Applications: TSV-Based On-Chip Spiral Inductor, TSV-Based On-Chip Wireless Communications and TSV-Based Bandpass Filter.- Imperfection in TSV Modeling.- New Trends in TSV.- TSV Fabrication.- Conclusions.
