Physics of Semiconductor Devices

Massimo Rudan received a degree in Electrical Engineering in 1973 and a degree in Physics in 1976, both from the University of Bologna, Italy. His research interests are in the field of physics of carrier transport and numerical analysis of semiconductor devices. In 1986, he was a visiting scientist, on a one-year assignment, at the IBM Thomas J. Watson Research Center at Yorktown Heights, NY, studying the discretization techniques for the higher-order moments of the Boltzmann Transport Equation.
From 1979, he has been teaching annual courses in the Faculty of Engineering of the University of Bologna, firstly as Lecturer and then as Associate Professor. In 1990, he became Full Professor of Microelectronics at the University of Bologna. An IEEE Fellow (2008) and Life Fellow (2014), M.R. is author, coauthor or editor of 12 books, and has authored or coauthored about 250 technical papers published in major journals, or presented in international conferences, in the fields of electronics, solid-state physics, and solid-state sensors.
M.R. has coordinated several research projects funded by the European Commission, international Companies and Foundations, the National Council of Research, and the National Ministry of University and Research. In 2001, he was one of the founders of the Advanced Research Center for Electronic Systems (ARCES) of the University of Bologna.