Circuit Design for Modern Applications
1st Edition
Published on 5. February 2025
406 pages
978-1-040-26990-9 (ISBN)
Description
This book offers a clear exploration of cutting-edge semiconductor circuit technologies and their practical applications. It covers topics like advanced transistor design, low-power consumption techniques, and high-performance circuit design.
Circuit Design for Modern Applications explores the recent innovations in semiconductor technology. Bandgap reference circuits, quad model transistors, voltagecontrolled oscillators, LDO regulators, power amplifiers, low noise amplifiers, operational amplifiers, low-power CNTFET-based quaternary multipliers, and STT MRAM-based cache memory for multicore systems are discussed. It points out the difficulties in designing CMOS analog and RF circuits for mmWave applications and looks into newly developed field-effect transistors for an alternate solution. Innovative devices such as III-V material-based HEMTs, and junctionless FETs are discussed. The book also looks at creative ways to improve circuit performance and energy efficiency, which is a useful resource for academics, researchers, and industry experts working in semiconductors.
This book will help the readers to stay on the cutting edge of contemporary circuit design technologies, covering various topics from fundamental circuit design to high-performance circuits.
Circuit Design for Modern Applications explores the recent innovations in semiconductor technology. Bandgap reference circuits, quad model transistors, voltagecontrolled oscillators, LDO regulators, power amplifiers, low noise amplifiers, operational amplifiers, low-power CNTFET-based quaternary multipliers, and STT MRAM-based cache memory for multicore systems are discussed. It points out the difficulties in designing CMOS analog and RF circuits for mmWave applications and looks into newly developed field-effect transistors for an alternate solution. Innovative devices such as III-V material-based HEMTs, and junctionless FETs are discussed. The book also looks at creative ways to improve circuit performance and energy efficiency, which is a useful resource for academics, researchers, and industry experts working in semiconductors.
This book will help the readers to stay on the cutting edge of contemporary circuit design technologies, covering various topics from fundamental circuit design to high-performance circuits.
More details
Edition
1. Auflage
Language
English
Place of publication
London
United Kingdom
Publishing group
Taylor & Francis Ltd
Target group
College/higher education
Professional and scholarly
Illustrations
54 Tables, black and white; 271 Line drawings, black and white; 4 Halftones, black and white; 275 Illustrations, black and white
File size
28,29 MB
ISBN-13
978-1-040-26990-9 (9781040269909)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions
A. Andrew Roobert | M. Venkatesh | Shiromani Balmukund Rahi
Circuit Design for Modern Applications
Book
approx. 06/2026
1st Edition
CRC Press
€69.00
Not yet published
A. Andrew Roobert | M. Venkatesh | Shiromani Balmukund Rahi
Circuit Design for Modern Applications
Book
02/2025
1st Edition
CRC Press
€207.50
Shipment within 10-20 days
Persons
A. Andrew Roobert is currently a Postdoctoral Fellow in the Department of Electronics and Electrical Engineering, Indian Institute of Technology Guwahati, Assam, India. He completed his Ph.D. degree in RFIC Design at Thiagarajar College of Engineering, Madurai, M.E. degree in VLSI Design at Francis Xavier Engineering College, Tirunelveli, and B.E. degree in Electronics and Communication Engineering at National Engineering College Kovilpatti. His research interests include RFIC Design, LNA Design, Circuit optimization, Low power VLSI Design, Physical Design, VLSI architecture design, electronic system design and wireless communication.
M. Venkatesh is currently an Assistant Professor in the Department of Electronics and Communication Engineering, CMR Institute of Technology, Bengaluru, India. He received his B.E degree in Electronics and Communication Engineering from SACS MAVMM Engineering College, Madurai (2013), M.E degree in VLSI Design from P.S.N.A. College of Engineering and Technology, Dindigul (2015), and completed his Ph.D. in Thiagarajar College of Engineering, Madurai on July (2020). His research interests include analytical modeling and simulation of Nanoscale SOI MOSFETs, Nanowire Transistors, HEMTs, Tunnel FET and Quantum Effects in Multigate MOSFETs.
Shiromani Balmukund Rahi completed his Ph. D. [2018] at the Indian Institute of Technology Kanpur (India) and post-doctoral research [2021] with Prof. N. Guenifi (Electronics Department, University Mostefa Benboulaid of Batna Algeria (Algeria). Currently he works at Mahamaya College of Agriculture Engineering and Technology Akabarpur Ambedkar Nagar Uttar Pradesh affiliated to Narendra Dev University of Agriculture and Technology Uttar Pradesh India and associated with Indian Institute of Technology Kanpur (India) for advance research for ultra low power devices, circuits and systems. He is currently working on various advanced Field Effect devices such as Tunnel FETs, negative FETs, Nanosheet FETs, NC-Tunnel FET, NC-FinFETs, and FeFETs.
G. Lakshmi Priya is currently an Assistant Professor Senior Grade-II in the School of Electronics Engineering (SENSE), VIT University, Chennai. She completed her Ph.D. in Semiconductor Device Modeling (2020), M.E. in Communication Systems, B.E. in Electronics and Communication Engineering from Thiagarajar College of Engineering, Madurai affiliated to Anna University Chennai. Her primary area of research is Semiconductor Devices and Nanoscale Transistors.
Samuel Tensingh received his B.E. degree in Electronics and Communication Engineering from Anna University, Chennai, India in 2008, and Master of Science in Integrated Circuit Design from Nanyang Technological University, Singapore & Technical University of Munich, Germany in 2010. He also received a Master of Business Administration from Anglia Ruskin University, United Kingdom in 2012. Currently he is working as an Associate Lecturer in the School of Biomedical Engineering, at the University of Sydney, Australia. He also previously worked for ST Microelectronics, Broadcom, and Avago Technologies in Singapore.
M. Venkatesh is currently an Assistant Professor in the Department of Electronics and Communication Engineering, CMR Institute of Technology, Bengaluru, India. He received his B.E degree in Electronics and Communication Engineering from SACS MAVMM Engineering College, Madurai (2013), M.E degree in VLSI Design from P.S.N.A. College of Engineering and Technology, Dindigul (2015), and completed his Ph.D. in Thiagarajar College of Engineering, Madurai on July (2020). His research interests include analytical modeling and simulation of Nanoscale SOI MOSFETs, Nanowire Transistors, HEMTs, Tunnel FET and Quantum Effects in Multigate MOSFETs.
Shiromani Balmukund Rahi completed his Ph. D. [2018] at the Indian Institute of Technology Kanpur (India) and post-doctoral research [2021] with Prof. N. Guenifi (Electronics Department, University Mostefa Benboulaid of Batna Algeria (Algeria). Currently he works at Mahamaya College of Agriculture Engineering and Technology Akabarpur Ambedkar Nagar Uttar Pradesh affiliated to Narendra Dev University of Agriculture and Technology Uttar Pradesh India and associated with Indian Institute of Technology Kanpur (India) for advance research for ultra low power devices, circuits and systems. He is currently working on various advanced Field Effect devices such as Tunnel FETs, negative FETs, Nanosheet FETs, NC-Tunnel FET, NC-FinFETs, and FeFETs.
G. Lakshmi Priya is currently an Assistant Professor Senior Grade-II in the School of Electronics Engineering (SENSE), VIT University, Chennai. She completed her Ph.D. in Semiconductor Device Modeling (2020), M.E. in Communication Systems, B.E. in Electronics and Communication Engineering from Thiagarajar College of Engineering, Madurai affiliated to Anna University Chennai. Her primary area of research is Semiconductor Devices and Nanoscale Transistors.
Samuel Tensingh received his B.E. degree in Electronics and Communication Engineering from Anna University, Chennai, India in 2008, and Master of Science in Integrated Circuit Design from Nanyang Technological University, Singapore & Technical University of Munich, Germany in 2010. He also received a Master of Business Administration from Anglia Ruskin University, United Kingdom in 2012. Currently he is working as an Associate Lecturer in the School of Biomedical Engineering, at the University of Sydney, Australia. He also previously worked for ST Microelectronics, Broadcom, and Avago Technologies in Singapore.
Content
Chapter 1- Design an Inverter with a Quad-model Transistor
Chapter 2- Exploring the Design and Performance Dynamics of CMOS Voltage Controlled Ring Oscillator Stages
Chapter 3- A 3.1 ppm/OC Sub-1V Bandgap Reference in 28nm CMOS Technology Operating from a 1V Supply Voltage
Chapter 4- Advancements in Contemporary Circuit Design: Exploring Alternatives to CMOS for Enhanced Performance
Chapter 5- STT MRAM based Cache Memory Design for Multicore Systems
Chapter 6- OPTIMAL APPROACHES FOR ENHANCING ENERGY EFFICIENCY IN CIRCUITS
Chapter 7- Design and Analysis of Optimized Area and Energy Efficient QCA-based 8 x 8 Butterfly Switching
Chapter 8- Advanced Operational Amplifier with Emerging CMOS Technology
Chapter 9- Circuit Design for Accurate Digitized Urine Weight Measurement
Chapter 10- LOW POWER ENERGY EFFICIENT CNTFET BASED QUATERNARY MULTIPLIER
Chapter 11- Advancing Semiconductor Devices: FET Downscaling & Next-Gen Transistors
Chapter 12- Investigation of the Challenges in Analog/RF Circuit Design for millimeter wave Applications and Possible Solutions
Chapter 13- Performance analysis of Inner gate Vertical TFET
Chapter 14- Low Power CNTFET based Single Ended Write Driver Circuit for SRAM Design
Chapter 15- Electron Mobility Models and Subthreshold Swing for Modern Semiconductor
Chapter 16- Multiple-Gate MOSFET Model Implemented in Analog Circuits for Simulations and Co-Design Applications
Chapter 17- Design of Impedance Attenuated Control Loop for Flipped Voltage Follower based Output-capacitor-less LDO Regulators
Chapter 18- III-V Material-Based Lateral and Vertical HEMTs for High-Power and High-Speed Switching Applications
Chapter 19- Advanced Compound Semiconductor Based Heterostructure Devices for Next Generation Electronics
Chapter 20- GaN HEMT-Based Power Amplifiers: Advancements and Applications
Chapter 21- New approaches for modeling of nanoscale Junctionless FETs: device and circuit Level performance assessment
Chapter 22- Survey of Machine Learning-Augmented TCAD Algorithms for Modeling of GaN HEMTs
Chapter 23- Implementation of Modified Dual-Coupled Linear Congruential Generator with Parallel Prefix Adder
Chapter 2- Exploring the Design and Performance Dynamics of CMOS Voltage Controlled Ring Oscillator Stages
Chapter 3- A 3.1 ppm/OC Sub-1V Bandgap Reference in 28nm CMOS Technology Operating from a 1V Supply Voltage
Chapter 4- Advancements in Contemporary Circuit Design: Exploring Alternatives to CMOS for Enhanced Performance
Chapter 5- STT MRAM based Cache Memory Design for Multicore Systems
Chapter 6- OPTIMAL APPROACHES FOR ENHANCING ENERGY EFFICIENCY IN CIRCUITS
Chapter 7- Design and Analysis of Optimized Area and Energy Efficient QCA-based 8 x 8 Butterfly Switching
Chapter 8- Advanced Operational Amplifier with Emerging CMOS Technology
Chapter 9- Circuit Design for Accurate Digitized Urine Weight Measurement
Chapter 10- LOW POWER ENERGY EFFICIENT CNTFET BASED QUATERNARY MULTIPLIER
Chapter 11- Advancing Semiconductor Devices: FET Downscaling & Next-Gen Transistors
Chapter 12- Investigation of the Challenges in Analog/RF Circuit Design for millimeter wave Applications and Possible Solutions
Chapter 13- Performance analysis of Inner gate Vertical TFET
Chapter 14- Low Power CNTFET based Single Ended Write Driver Circuit for SRAM Design
Chapter 15- Electron Mobility Models and Subthreshold Swing for Modern Semiconductor
Chapter 16- Multiple-Gate MOSFET Model Implemented in Analog Circuits for Simulations and Co-Design Applications
Chapter 17- Design of Impedance Attenuated Control Loop for Flipped Voltage Follower based Output-capacitor-less LDO Regulators
Chapter 18- III-V Material-Based Lateral and Vertical HEMTs for High-Power and High-Speed Switching Applications
Chapter 19- Advanced Compound Semiconductor Based Heterostructure Devices for Next Generation Electronics
Chapter 20- GaN HEMT-Based Power Amplifiers: Advancements and Applications
Chapter 21- New approaches for modeling of nanoscale Junctionless FETs: device and circuit Level performance assessment
Chapter 22- Survey of Machine Learning-Augmented TCAD Algorithms for Modeling of GaN HEMTs
Chapter 23- Implementation of Modified Dual-Coupled Linear Congruential Generator with Parallel Prefix Adder
