Wide Bandgap Semiconductor-Based Electronics

Name: Wide Bandgap Semiconductor-Based Electronics
Brand: Institute of Physics Publishing
Price: 156.99 EUR
Availability: OnlineOnly

Fan Ren Stephen J. Pearton(Editor)

Institute of Physics Publishing

Published on 30. September 2020

450 pages

E-Book

ePUB without DRM

System requirements

978-0-7503-2516-5 (ISBN)

€156.99incl. 7% vat

System requirements

for ePUB without DRM

E-Book Single Licence

Available for download

Description

More details

Other editions

Persons

Content

Intro
Preface
References
Acknowledgements
Editor biography
Fan Ren
S J Pearton
Contributor list
Chapter 1 Low-dimensional ß-Ga2O3 semiconductor devices
1.1 Introduction
1.1.1 Preparation of low-dimensional Ga2O3 nanostructures
1.1.2 Contact properties of ß-Ga2O3 nanodevices
1.1.3 The ohmic contacts of ß-Ga2O3 nanobelt devices
1.1.4 ß-Ga2O3 nanobelt Schottky contacts
1.2 ß-Ga2O3-based nanoelectronic devices
1.2.1 Single ß-Ga2O3 nanobelt-based field-effect transistors
1.2.2 ß-Ga2O3 nanobelt-based heterostructured transistors
1.2.3 ß-Ga2O3 nanobelt-based Schottky barrier diode
1.3 Conclusion
References
Chapter 2 ß-Ga2O3 power field-effect transistors
2.1 Introduction
2.2 Key parameters of a ß-Ga2O3 power field-effect transistor
2.3 Planar depletion-mode transistors
2.4 Planar enhancement-mode transistors
2.5 Vertical depletion-mode transistors
2.6 Vertical enhancement-mode transistors
2.7 Homojunction HEMT
2.8 Heterojunction HEMT
2.9 Nanomembrane transistors
2.10 Conclusion
References
Chapter 3 Beta gallium oxide (ß-Ga2O3) nanomechanical transducers: fundamentals, devices, and applications
3.1 Introduction
3.2 ß-Ga2O3 circular drumhead resonators
3.3 Resonant solar-blind ultraviolet (SBUV) transducers
3.3.1 Resonator
3.3.2 Oscillator
3.3.3 Dual-modality transducer
3.4 Conclusions and future perspectives
References
Chapter 4 Epitaxial growth of monoclinic gallium oxide using molecular beam epitaxy
4.1 The properties of Ga2O3
4.1.1 Polymorphs
4.1.2 Crystal structure, electronics, and thermal properties of ß-Ga2O3
4.1.3 Optical properties of MBE-grown ß-Ga2O3
4.2 Molecular beam epitaxy
4.3 Growth modes
4.4 Epitaxial growth of ß-Ga2O3 thin films by MBE
4.4.1 Growth of ß-Ga2O3 from an elemental Ga source using PAMBE
4.4.2 Growth of ß-Ga2O3 using a Ga2O3 compound source
4.4.3 Growth of ß-Ga2O3 using ozone-MBE
4.5 Investigation of deep level defects and traps in MBE-grown ß-Ga2O3
4.6 The status of dopants in MBE-grown ß-Ga2O3
4.7 ß-(AlxGa1-x)2O3/Ga2O3 heterostructures and superlattices
4.8 Summary
References
Chapter 5 Defects and carrier lifetimes in Ga2O3
5.1 Introduction
5.1.1 Summary of the results of theoretical and experimental defect and impurity studies in ß-Ga2O3
5.1.2 Centers active in recombination
5.2 Conclusions
Acknowledgments
References
Chapter 6 Breakdown in Ga2O3 rectifiers-the role of edge termination and impact ionization
6.1 Introduction
6.2 The evolution of rectifier design and performance
6.3 Degradation mechanisms in rectifiers
6.3.1 Reverse bias
6.3.2 Forward bias
6.3.3 Carrier multiplication mechanisms
6.4 Measurement of impact ionization coefficients and their temperature dependence
6.5 Edge termination methods
6.6 The choice of dielectric material for a field plate
6.7 Summary and conclusions
Acknowledgments
References
Chapter 7 Radiation damage in Ga2O3 materials and devices
7.1 Introduction
7.2 Basic radiation damage measurement quantities
7.2.1 The importance of radiation damage in electronics
7.2.2 Radiation damage in wide bandgap semiconductors
7.2.3 Summary of radiation damage studies in Ga2O3
7.2.4 Dominant defects induced by proton irradiation
7.3 Conclusions
Acknowledgments
References
Chapter 8 Optical properties of Ga2O3 nanostructures
8.1 Introduction
8.2 Optical parameters of Ga2O3
8.2.1 Optical processes in semiconductors and insulators
8.2.2 Gallium oxide as an optical material
8.2.3 Ga2O3 nano- and microstructures
8.3 Luminescence of doped Ga2O3
8.3.1 Transition metal ion doping (Cr, Ni, Mn, and Zn)
8.3.2 Rare-earth ion doping (Er, Eu, Gd, Tb, Dy, and Nd)
8.3.3 Sn and Si doping
8.3.4 Al and In doping and alloying-ternary oxides
8.3.5 Other dopants
8.4 Optical confinement in Ga2O3 microstructures
8.4.1 Waveguiding in Ga2O3
8.4.2 Fabry-Pérot resonant cavities
8.4.3 Distributed Bragg reflector based microcavities
8.5 Summary, outlook, and prospective work
References
Chapter 9 Band alignment of various dielectrics on Ga2O3, (AlxGa1-x)2O3, and (InxGa1-x)2O3
9.1 Introduction
9.1.1 (AlxGa1-x)2O3
9.1.2 (InxGa1-x)2O3
9.2 Band alignment principles
9.3 Measuring band offset
9.4 Bandgap determination
9.4.1 Onset of inelastic losses using XPS
9.4.2 Reflection electron energy loss spectroscopy
9.4.3 Ultraviolet-visible spectroscopy
9.5 Choice of dielectric
9.6 Reported band offsets
9.6.1 Gate dielectrics on Ga2O3, (AlxGa1-x)2O3, and (InxGa1-x)2O3
9.6.2 Al2O3
9.6.3 SiO2 and HfSiO4
9.6.4 Indium tin oxide and aluminum zinc oxide
9.6.5 InN
9.6.6 CuI
9.7 Conclusion
References
Chapter 10 The effect of growth parameters on the residual carbon concentration in GaN high electron mobility transistors: theory, modeling, and experiments
10.1 Introduction
10.1.1 Opportunities and challenges for GaN based devices
10.1.2 Carbon impurity and related defects in GaN
10.2 Correlation between carbon concentration and growth conditions
10.2.1 The effects of MOCVD growth parameters
10.3 Theory and modeling of carbon incorporation
10.3.1 The surface reconstruction of GaN
10.3.2 The effects of carrier gas
10.3.3 The thermodynamic model of impurity incorporation
10.3.4 The effects of the Ga precursor
10.4 Conclusions
References
Chapter 11 High Al-content AlGaN-based HEMTs
11.1 Introduction
11.2 Figures-of-merit suggest performance advantages for AlGaN-channel HEMTs
11.2.1 Power switching figures-of-merit
11.2.2 RF figures-of-merit
11.3 Ohmic contacts for high Al-content AlGaN
11.4 AlGaN-channel HEMTs
11.4.1 Early work in AlGaN-channel HEMTs
11.4.2 Recent work in high Al-content HEMTs
11.4.3 Enhancement-mode HEMTs
11.4.4 Toward high current density in AlGaN-channel HEMTs
11.4.5 RF performance of high Al-content HEMTs
11.5 Breakdown properties of high Al-content transistors
11.6 Other nascent AlGaN HEMT research
11.6.1 Pulsed I-V
11.6.2 Reliability
11.6.3 Extreme temperature operation
11.6.4 Radiation performance
11.7 Summary
Acknowledgement
References
Chapter 12 Understanding interfaces for homoepitaxial GaN growth
12.1 Introduction
12.2 Surface interface structure
12.2.1 Offcut
12.2.2 Wafer bow
12.2.3 Surface polish and morphology
12.3 Chemical interfaces
12.4 Effects on device performance
12.4.1 Surface morphology effects
12.4.2 Chemical interface effects
12.5 Conclusion
Acknowledgements
References
Chapter 13 Gas sensors based on wide bandgap semiconductors
13.1 Introduction
13.2 An AlGaN/GaN HEMT-based ethanol sensor
13.3 AlGaN/GaN HEMT-based ammonia sensor
13.4 The AlGaN/GaN HEMT-based carbon dioxide sensor
13.5 The AlGaN/GaN HEMT-based hydrogen sensor with a water blocking layer
13.6 Conclusion
Acknowledgments
References
Chapter 14 Modeling of AlGaN/GaN pH sensors
14.1 Introduction
14.2 Background
14.2.1 Experimental review
14.2.2 Simulation review
14.3 Simulation methodology: an open-gate high electron mobility transistor as pH sensor
14.3.1 Device structure
14.3.2 Two-dimensional electron gas
14.3.3 Electrolyte
14.3.4 Semiconductor
14.3.5 Inner and outer Helmholtz regions
14.3.6 Interface regions
14.3.7 Boundary conditions
14.4 Results: a pH GaN-based HEMT sensor with EDL and specific adsorption finite-element modeling
14.4.1 Understanding the 2DEG as a sensor response
14.4.2 Equilibrium reaction rate
14.4.3 Passivation charge
14.4.4 Linear 2DEG sensor response
14.4.5 Drain bias
14.5 Comparing simulation work with experimental results
14.6 Future work
References
Chapter 15 The potential and challenges of in situ microscopy of electronic devices and materials
15.1 Introduction
15.2 Materials and characterization techniques
15.2.1 The material properties and working principle of AlGaN/GaN HEMTs
15.2.2 Material and device characterization using the in situ TEM technique
15.3 AlGaN/GaN HEMT reliability study
15.3.1 Degradation in the GaN HEMT
15.3.2 AlGaN/GaN HEMT characterization techniques
15.3.3 GaN HEMT reliability study using an in situ TEM study
15.4 Future directions
Acknowledgement
References
Chapter 16 Vertical GaN-on-GaN power devices
16.1 Introduction
16.2 Vertical GaN p-n diodes
16.2.1 Ion implantation
16.2.2 Beveled field plate
16.2.3 Mesa termination
16.2.4 Plasma-based edge termination
16.2.5 Leakage mechanism
16.3 Vertical GaN Schottky barrier diodes
16.3.1 Carbon doping in the drift layer
16.3.2 Double drift layer
16.3.3 Effect of buffer layer thickness
16.3.4 Edge termination
16.3.5 Leakage mechanism
16.4 Vertical GaN advanced power rectifiers
16.4.1 Vertical GaN MPS rectifiers
16.4.2 Vertical GaN JBS rectifiers
16.4.3 Vertical GaN TMBS rectifiers
16.5 Normally-off vertical GaN power transistors
16.5.1 Vertical GaN CAVETs
16.5.2 Vertical GaN trench MOSFETs
16.5.3 Vertical GaN JFETs
16.5.4 Vertical GaN FinFETs
16.6 Selective area doping
16.7 Conclusion
References
Chapter 17 Electric-double-layer-modulated AlGaN/GaN high electron mobility transistors (HEMTs) for biomedical detection
17.1 Introduction
17.2 Fabrication of sensors
17.2.1 Fabrication of HEMT sensors
17.2.2 Antibody and DNA aptamer immobilization
17.3 Principles and characteristics of EDL AlGaN/GaN HEMT sensors
17.4 Beyond the Debye length for protein detection in physiological samples
17.4.1 Protein detection in 1X PBS and human serum
17.4.2 Tunable and amplified sensitivity
17.4.3 Portable devices for personal healthcare
17.5 Summary
References
Chapter 18 Irradiation effects on high aluminum content AlGaN channel devices
18.1 Introduction
18.2 SRIM modeling
18.3 Device fabrication overview
18.4 Proton irradiation
18.5 Alpha irradiation
18.6 Summary and conclusion
References
Chapter 19 BeMgZnO wide bandgap quaternary alloy semiconductor
19.1 Introduction
19.2 Theoretical studies
19.3 Material growth
19.3.1 MBE of BeMgZnO
19.3.2 Other growth methods
19.4 Compositional and optical characterizations of BeMgZnO
19.5 Applications of BeMgZnO
19.5.1 BeMgZnO/ZnO HFETs
19.5.2 Other applications
19.6 Summary
References
Chapter 20 Growth and properties of hexagonal boron nitride (h-BN) based alloys and quantum wells
20.1 Introduction and unique properties of h-BN
20.2 Prospects of h-BN-based alloys and heterostructures
20.3 Epitaxy growth and properties of h-BGaN alloys and QWs
20.3.1 Epitaxial growth of h-GaxB1-xN alloys
20.3.2 Growth of h-BGaN QWs and photoluminescence emission properties
20.3.3 Probing the critical thickness and phase separation effects in h-GaBN/BN heterostructures
20.4 Epitaxy growth and properties of h-(BN)C semiconductor alloys
20.4.1 BN-rich h-(BN)1-x(C2)x alloys
20.4.2 C-rich h-(BN)1-x(C2)x alloys
20.5 Concluding remarks
Acknowledgement
References
Chapter 21 Recent advances in SiC/diamond composite devices
21.1 Introduction
21.2 Silicon carbide
21.2.1 SiC power devices
21.2.2 Technological challenges
21.3 Diamond
21.3.1 Doped diamond
21.3.2 Diamond based devices
21.3.3 Technical challenges
21.4 Diamond/SiC composite devices
21.4.1 Thermal management
21.4.2 Device passivation
21.4.3 Diamond/SiC heterojunctions
21.5 PCD/SiC heterojunctions
21.5.1 Experimental details
21.5.2 Morphological characterization of the BDD films
21.5.3 Electrical characteristics of the BDD films
21.6 Conclusions
References

System requirements

Save as PDF Copy link into clipboard

Schweitzer Fachinformationen

Wide Bandgap Semiconductor-Based Electronics

Description

More details

Other editions

Additional editions

Persons

Content

System requirements