Field-Effect Transistors Technology
From Sustainability to Next-Generation VLSI Design
Published on 8. December 2025
480 pages
978-1-040-51966-0 (ISBN)
Description
The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.
Features
Highlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies.
Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design.
Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs.
Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.
The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology.
Features
Highlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies.
Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design.
Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs.
Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.
The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology.
More details
Language
English
Place of publication
London
United Kingdom
Publishing group
Taylor & Francis Ltd
Target group
College/higher education
Professional and scholarly
Illustrations
16 Tables, black and white; 152 Line drawings, black and white; 42 Halftones, black and white; 194 Illustrations, black and white
File size
348,84 MB
ISBN-13
978-1-040-51966-0 (9781040519660)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions
Ashish Raman | Prabhat Singh | Naveen Kumar
Field-Effect Transistors Technology
From Sustainability to Next-Generation VLSI Design
Book
approx. 12/2025
1st Edition
CRC Press
€245.00
Not yet published
Persons
Ashish Raman works as an associate professor, in the Department of Electronics and Communication Engineering, at Dr. B R Ambedkar National Institute of Technology Jalandhar Punjab, India. His main areas of interest are electronic devices and circuits, device modeling, device design and simulation, MEMS, and high-power devices. He has contributed research articles/papers to SCI, Scopus, and other reputed journals like IEEE Transactions of Electron Devices, IEEE Transactions on Nanotechnology, Elsevier, and Springer journals, and at international conferences. He is a member of the IEEE Electron Devices Society, the IEEE Solid-State Circuits Society, and the Institution of Engineers Society, India.
Prabhat Singh has been a Postdoctoral Fellow scholar, in the School of Electrical and Computer Sciences, at Indian Institute of Technology, Bhubaneswar, Odisha, India. His expertise is in cryogenic CMOS, solid-state devices, analog complementary metal oxide semiconductor (CMOS) integrated circuits, nanoscale device design, and simulation. He has contributed research articles/papers to SCI, Scopus, and reputed journals.
Naveen Kumar is a post-doctoral research associate, in the Device Modelling Group, James Watt School of Engineering, at the University of Glasgow, United Kingdom. His research revolves around different semiconductor devices including ultra-scale FETs, solar cells, photodiodes, HEMT, and quantum dots, and their prospective applications. He has authored/co-authored more than 35 research articles/ papers in reputed international journals and conference proceedings. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics.
Sarabdeep Singh is currently working as an assistant professor, in the Department of Electronics and Communications Engineering, at Model Institute of Engineering and Technology, Jammu, India. His current research interests are microelectronics, sensors, and semiconductor devices focusing on Nanowire FETs, IMOS FETs, and Negative-Capacitance FETs. He has, to his credit, over twenty research papers published in national and international journals.
Prabhat Singh has been a Postdoctoral Fellow scholar, in the School of Electrical and Computer Sciences, at Indian Institute of Technology, Bhubaneswar, Odisha, India. His expertise is in cryogenic CMOS, solid-state devices, analog complementary metal oxide semiconductor (CMOS) integrated circuits, nanoscale device design, and simulation. He has contributed research articles/papers to SCI, Scopus, and reputed journals.
Naveen Kumar is a post-doctoral research associate, in the Device Modelling Group, James Watt School of Engineering, at the University of Glasgow, United Kingdom. His research revolves around different semiconductor devices including ultra-scale FETs, solar cells, photodiodes, HEMT, and quantum dots, and their prospective applications. He has authored/co-authored more than 35 research articles/ papers in reputed international journals and conference proceedings. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics.
Sarabdeep Singh is currently working as an assistant professor, in the Department of Electronics and Communications Engineering, at Model Institute of Engineering and Technology, Jammu, India. His current research interests are microelectronics, sensors, and semiconductor devices focusing on Nanowire FETs, IMOS FETs, and Negative-Capacitance FETs. He has, to his credit, over twenty research papers published in national and international journals.
Content
1. Semiconductors: The Backbone of Modern Technological Advancements. 2. Materials Frontiers: Pioneering Semiconductor Design. 3. FA Overview on Distinct FETs: Device Physics and Properties. 4. Essential Foundations of CMOS Technology. 5. Wide Band Gap Semiconductors and their Applications. 6. Comprehensive Review of Carbon Nanotubes: Synthesis, Properties, Functionalization, Characterization, and Applications. 7. Organic Field-Effect Transistor: Introduction, Modelling and Process. 8. Contact Resistance in an Organic Field Effect Transistor. 9. Synergistic Integration of High Electron Mobility Transistors (HEMT) and Quantum Dots for Spintronics-Based Quantum Computing. 10. Evaluation: CMOS Technology for the Estimation of Digital PLL Building Blocks. 11. Effective Design of a High-Speed, Low-Power Hybrid Adder for Computing Systems Using XOR-XNOR Cells. 12. Low Power and High Speed Comparator of SAR ADC. 13. Future Perspectives in FETs. 14. Web Monitoring and Speed Control of BLDC Motor with IoT. 15. A Recapitulation of Advancements in Water Treatment Using Cutting-edge Renewable Energy Technologies for a Sustainable Future.
