
Processing and Properties of Compound Semiconductors
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Content
- Front Cover
- Processing and Properties of Compound Semiconductors: Semiconductors and Semimetals
- Copyright Page
- Contents
- List of Contributors
- Chapter 1. Introduction
- 1. Introduction
- 2. Wet Etching
- References
- Chapter 2. Gallium Arsenide Heterostructures
- 1. Introduction
- 2. Crystal Growth and Properties of GaAs
- 3. Growth and Material Properties of GaAs Heterostructures
- 4. Physical Properties of GaAs-Based Quantum Well Structures and Superlattices
- References
- Chapter 3. Growth and Optical Properties of GaN
- 1. Introduction
- 2. Gallium Nitride and its Growth on Different Substrates
- 3. Line Width and Quantum Beats in GaN
- 4. Time-Resolved Spectroscopy of GaN Epilayers
- 5. p-GaN
- 6. n-GaN
- 7. Optical Pumping and Lasing in GaN Epilayers and Heterostructures
- 8. GaN Quantum Wells
- References
- Chapter 4. SiGe/Si Processing
- 1. Introduction
- 2. SiGe/Si Material Properties and Processing Challenges
- References
- Chapter 5. Advances in Quantum Dot Structures
- 1. Introduction
- 2. Physical Properties
- 3. State of the Art
- References
- Chapter 6. Wet Etching of III-V Semiconductors
- 1. Introduction
- 2. Semiconductor Electrochemistry: Basic Principles and Experimental Methods
- 3. Types of Etching Reactions
- 4. Some Solid-State and Electrochemical Data on III-V Semiconductors
- 5. Kinetics and Mechanisms of Etching Reactions at III-V Semiconductors
- 6. Material-Selective Etching
- 7. Etch Morphologies and Profiles
- 8. Conclusions
- References
- Index
- Contents of Volumes in This Series
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