
Nitride Semiconductor Devices: Principles and Simulation
Description
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This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.
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Content
1. Introduction
2. Electron Bandstructure Parameters
3. Spontaneous and Piezoelectric Polarization: Basic Theory vs. Practical Recipes
4. Transport Parameters for Electrons and Holes
5. Optical Constants of Bulk Nitrides
6. Intersubband Absorption in AlGaN/GaN Quantum Wells
7. Interband Transitions in InGaN Quantum Wells
8. Electronic and Optical Properties of GaN-based Quantum Wells with (10-10) Crystal Orientation
9. Carrier Scattering in Quantum-Dot Systems
Part 2: DEVICES
10. AlGaN/GaN High Electron Mobility Transistors
11. Intersubband Optical Switches for Optical Communications
12. Intersubband Electroabsorption Modulator
13. Ultraviolet Light-Emitting Diodes
14. Visible Light-Emitting Diodes
15. Simulation of LEDs with Phosphorescent Media for the Generation of White Light
16. Fundamental Characteristics of Edge-Emitting Lasers
17. Resonant Internal Transverse-Mode Coupling in InGaN/GaN/AlGaN Lasers
18. Optical Properties of Edge-Emitting Lasers: Measurement and Simulation
19. Electronic Properties of InGaN/GaN Vertical-Cavity Lasers
20. Optical Design of Vertical-Cavity Lasers
21. GaN Nanowire Lasers
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