
Non-Crystalline Films for Device Structures
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Content
- Cover
- Contents
- Contributors
- Preface
- Chapter 1. Ultrathin Gate Dielectric Films for Si-Based Microelectronic Devices
- 1.1. Introduction
- 1.2. Requirements of Ultrathin Gate Dielectric Films
- 1.3. Ultrathin Gate Dielectric Film Processing
- 1.4. Characterization of Ultrathin Gate Dielectric Films
- 1.5. Hydrogen and Ultrathin Gate Dielectric Films
- 1.6. Silicon Oxide Gate Dielectric Films
- 1.7. Silicon Oxynitride Gate Dielectric Films
- 1.8. Alternative (High-k) Gate Dielectric Films
- 1.9. Final Remarks
- Acknowledgments
- References
- Chapter 2. Electrochemical Passivation of Si and SiGe Surfaces
- 2.1. Introduction
- 2.2. In Situ Characterization of Surface Bond Configurations and Electronic Surface States
- 2.3. Electrochemically Hydrogenated Si Surfaces
- 2.4. Hydrogenated Porous Silicon
- 2.5. Thin Anodic Oxides on Si
- 2.6. Thick Anodic Oxides on Si
- 2.7. Enhanced Passivation of SiGe by Anodic Oxidation
- Acknowledgments
- References
- Index
- Recent Volumes In This Series
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