The Physics of MOS Insulators
Proceedings of the International Topical Conference on the Physics of MOS Insulators Held at the Jane S. McKimmon Conference Center, North Carolina State University, Raleigh, North Carolina, June 18-20, 1980
Published on 22. October 2013
382 pages
978-1-4831-6244-7 (ISBN)
Description
The Physics of MOS Insulators focuses on the experiments, research, and discussions made on MOS insulators. Divided into eight parts and having 72 chapters, the selection features the lengthy literature of contributors in the field of biochemistry who have continuously worked to highlight the structure, properties, applications, processes, experiments, and research done on MOS insulators. Scattered within the numerous chapters of the selection are experiments that are supported by lengthy discussions and data necessary to validate the claims of the authors. Although the chapters cover different topics, generally, they present how MOS insulators have captured the interest of biochemists and other individuals who are interested in this discipline. The papers generally include samples and measurements, observations, discussions, numerical representations, methodologies, conclusions, and recommendations. This book is a dependable source of information for those who are keen enough to study the physics of MOS insulators. This text is highly recommended to biochemists, students, and scholars who find this area of study interesting.
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Other editions
Additional editions
G. Lucovsky | etc.
Physics of Metal-oxide Semiconductor Insulators
International Conference Proceedings
Book
11/1980
Pergamon
€66.96
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Content
Chapter I: Transport Properties High Current Injection into SiO2 Using Si-Rich SiO2 Films and Experimental Applications High Field Conduction in Thick Oxide MNOS Capacitors on p-Type Silicon Dielectric Breakdown in Thermal SiO2 Grown from Doped Polycrystalline Silicon Thin Films The Effect of Diffusion on the Photoconductivity of Thin Films The Kinetic Behavior of Mobile Ions in SiO2 Studied with TSIC and TVS Measurements Interactions between Small-Polaronic Particles in Solids Small-Polaron Hopping without Trap Participation in Dispersive Transient Transport in SiO2 of MOS Structures Electron Transport in SiO2 Films at Low Temperatures Physical Effects in Lateral MIS Structures with Ultra-Thin Oxides Oxygen as a Two-Level Tunneling System in SiO2Chapter II: Bulk Properties Periodic Structural Models and Radial Distribution Functions of SiOx: x = 0 to 2 The Optical Absorption Edge of SiO2 Band Structure and Density of States of ß-Silicon Nitride Electron Microscopy and Raman Spectroscopy of Nb2O5, Ta2O5 and Si3N4 Thin Films Phonons and Submicrocrystallites in Amorphous SiO2 Chemical Bonding in SiO Structural and Bond Flexibility of Vitreous SiO2 FilmsChapter III: Bulk Defects Electron-Transfer Model for E'-Center Optical Absorption in SiO2 Assignment of the Optical Absorption of the E1' Center in SiO2 Electronic Structure of Vacancies and Interstitials in SiO2 Surface and Bulk Vibrations in Ion-Implanted Amorphous Silica Energy Distribution of Electron Trapping Defects in Thick-Oxide MNOS Structures Traps in SiO2-Si Structure Determined by Electrochemical Method Charge Trapping and Associated Luminescence in MOS Oxide Layers Time Decay of Photoluminescence from Amorphous SiO2 Electron-Beam-Induced Luminescence in SiO2 Photoionization Cross Section of the 2.5 eV Electron Trap in SiO2 Hydrogenation of Amorphous Silicon NitrideChapter IV: Oxidation - Si Initial Oxidation of Ion-Sputtered Silicon (100) Fixed Surface Charge Density Generation at the Interface of Anodic SiO2-Si Systems Tracer Measurements of Network Oxygen Exchange during Water Diffusion in SiO2 Films An 18O Study of the Oxygen Exchange in Silicon Oxide Films during Thermal Treatment in Water Vapor X-ray Photoelectron Spectroscopy of Siloxene: A Model Compound Representing Intermediate Oxidation States of Silicon and Interface Defect Sites Effect of Annealing in O2/N2 Mixture on the MOS CharacteristicsChapter V: Oxidation-Compound Semiconductors Chemical Reactions in Native Oxide Films Formed on III-V Semiconductors Anodic Oxide Insulators on InP and InAs Optical Properties and Interface Analysis of the GaAs-Anodic Oxide System XPS Study of GaAs(lOO) Surface Oxide Chemistry and Interface Potential Germanium (Oxy)nitride Based Surface Passivation Technique as Applied to GaAs and InP KrF-Laser Annealing of Native Oxides on GaAs Anodic Oxidation of Hg0.68Cd0.
