Gettering and Defect Engineering in Semiconductor Technology VIII
Published on 11. August 1999
628 pages
978-3-0357-0690-1 (ISBN)
Description
Ever since the invention of the transistor, a fantastic and continual growth in silicon technology has been witnessed; leading to yet more complex functions and higher densities of devices. The current book summarises the key issues of this field.
Among other topics, the outlook for silicon wafer technology and silicon materials engineering in the next millennium is reviewed and new approaches to the production of a 200 GHz silicon-based devices are described. Possible applications of dislocation luminescence in silicon are discussed as well as the hopes for, and limitations of, the Si:Er - based 1.54 mm emitter. Various properties of silicon-based materials and heterojunctions are characterised by using novel and state-of-the-art measurement techniques. Hydrogen- and oxygen-related defects, rare-earth impurities as well as radiation and gettering effects are discussed from various points of view.
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H. G. Grimmeiss | L. Ask | M. Kleverman
Gettering and Defect Engineering in Semiconductor Technology
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Content
Preface
Silicon Wafer Technology. Status and Overlook at the Millennium and a Decade Beyond
Self-Assembling Si/SiGe Nanostructures for Light Emitters
The Origin and Efficiency of Dislocation Luminescence in Si and its Possible Application in Optoelectronics
Acoustically Driven Optical Parameters in ?-? Photonic Materials
Growth-Defects and Process-Induced Defects in SiGe-Based Heterostructures
Status, Hopes and Limitations for the Si: Er-based 1.54 ?m Emitter
Oxygen Precipitation Behaviour and Internal Gettering in Epitaxial and Polished Czochralski Silicon Wafers
Grown-in Defects in High Temperature Annealed Si Wafers
Hydrogen Platelets in Crystalline Silicon - Precursors for the 'Smart Cut'
Relaxation of Misfit Induced Strain in Si-Based Heterostructures
Materials Quality and Materials Cost - Are they on a Collision Course?
Defect Engineering in the Development of Advanced Silicon Crystals and Wafers
200 GHz Potential of Si-Based Devices
Silicon Materials Engineering for the Next Millennium
Electrical Characterization of As-Grown and Thermally Treated 8'' Silicon Wafers
Equilibrium Critical Thickness of Strained Buried SiGe Layers
Improved Microwave Absorption Technique for Bulk and Surface Lifetime Analysis in Processed Si Wafers
Defect Control in Nitrogen Doped Czochralski Silicon Crystals
Growth and Characteristics of Low Trap Density Ultrathin [4-7 nm] Gate Oxides for SiGe Quantum Well MOS Structures
Interaction of Crystal Defects with p-n Junctions in Multicrystalline Si Solar Cells
Interaction between Point Defects and Dislocations in SiGe
Radiation Induced Defect Levels in Highly Doped n-Type Si1-xGex Strained Layers
ESR Investigations of Modulation-Doped Si/SiGe Quantum Wells
Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon
X-Ray Diffraction Studies of the Influence of Substitutional Carbon on Si/Ge Interdiffusion in SiGe/Si Superlattices
Radiation Defects Formation in Si
Oxygen and Peculiarities of its Precipitation in Si
The Peculiarities of a Non-Stationary Growth Kinetics in GSMBE and their Influence on Si/ Si1-xGex Interfaces Abruptness
Vacancy-Gettering in Silicon: Cavities and Helium-Implantation
Gettering Centres for Metals and Oxygen Formed in MeV-Ion-Implanted and Annealed Silicon
Iron Gettering on Cavities Produced by Helium Implantation
Gettering at Vacancy and Interstitial-Rich Regions in MeV Ion Implanted Silicon
Laser-Stimulated Gettering Processes in CdxHg1-xTe Solid Solutions
Gettering Strength Assessment Based on Lifetime Measurements
Impurity Gettering Investigation in the Si-SiO2 System
Computer Simulation of Gettering Induced Oxygen Redistribution in SOI Structures
Surface Gettering Background Impurities and Defects in GaAs Plates
Gettering Processes for the Preparation of Silicon Solar Cell Material
Gettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and Annealing
Oxygen and Carbon Clustering in Cz-Si during Electron Irradiation at Elevated Temperatures
Infrared Vibrational Bands Related to Thermal Donors in Germanium
New Infrared Vibrational Bands Related to Interstitial and Substitutional Oxygen in Silicon
Experimental and Numerical Investigation of the Oxygen Precipitation in Mono- and Multicrystalline Solar Silicon
The Segregation Behaviour of Oxygen at Dislocations in Silicon
About the Electrical Properties of Oxygen Phases Segregated by Annealing Cz Silicon in the 600-800 degreesC Range
Positron Trapping by Oxygen-Related Defects in Silicon and Anisotropy of 1D-ACAR Spectra
The Spatial Distribution of SiO2 Precipitates Grown in Silicon at Laser Induced Centres
Effect of External Stress Applied during Annealing on Hydrogen- and Oxygen-Implanted Silicon
The Nature of Precursors for the Thermal Donor Formation in Silicon
Photoluminescence of Erbium-Doped Silicon: Temperature Dependence
Rare Earth Impurities and Impurity-Related Centers in Silicon
Defect Engineering in Si: Ho Light-Emitting Structure Technology
Comparative Analysis of Light Emitting Properties of Si: Er and Ge/Si1-xGex Epitaxial Structures Obtained by MBE Method
Pre-Cavities Defect Distribution in He Implanted Silicon Studied by Slow Positron Beam
Ion Beam Doping of 6H-SiC for High Concentration p-Type Layers
In-Situ Photoexcitation-Induced Perturbations of Defect Complex Concentration and Distribution in Silicon Implanted with Light and Heavy Ions
Interaction of Hydrogen with Radiation-Induced Defects in Cz-Si Crystals
The Influence of Low-Energy Argon Implantation and Out-Diffusion Heat Treatments on Hydrogen Enhanced Thermal Donor Formation in P-Type Czochralski Silicon
Temperature Dependence of the Recombination Activity at Contaminated Dislocations in Si: A Model Describing the Different EBIC Contrast Behaviour
Experimental and Theoretical Study on Interaction Processes for 60 degrees Short Dislocation Segments with Precipitation Centers in Si-Crystals
Ultrasonic Influence on Dislocation Dynamics in Silicon
P-N- Junction Peripheral Current Analysis using Gated Diode Measurements
Investigations of Extended Defects after Sulfur Diffusion in GaAs
On the Reduction of the Critical Thickness in InxGa1-xAs Quantum Well Layers Grown on Vicinal GaAs Substrates
Extraction of Vacancy Parameters from Outdiffusion of Zinc from Silicon
Cu Determination in Silicon Wafers: A Comparison between Electrical and Chemical Measurements
Single Defect Studies by Means of Random Telegraph Signals in Submicron Silicon MOSFETs
Variations of Silicon Melt Convection in a Crucible with Boron Addition
Electrical Impedance Spectroscopy (EIS) as a New Characterisation Tool for the Determination of Electrical Material Parameters in Semiconductors and Insulators
Electron Spin Resonance of the Pb Centers Associated with Oxygen Precipitates in Silicon Crystals
Structural and Electrical Quality of Silicon Bicrystals Fabricated by a Modified Direct Bonding Technique
Formation of Spatial Inhomogeneities as a Result of Heat Treatment in Silicon Doped with Zinc
Magnetoplastic Effect in Compound Semiconductors
Reconstruction of GaAs/AlAs (311) and (100) Interfaces: Raman Study
Simulation of Point Defect Diffusion in Semiconductors
Correlation between Intrinsic Stress Distribution and Crystallographic Defects Density Profile in Czochralski Silicon after CMOS Processing
Silicon Impurity-Related Effects on Structural Defects in III-V Nitrides
Reconstruction of Deep Level Defect Distribution from DLTS Measurements in Compensated Semiconductors
Identification of Process Induced Defects in Silicon Power Devices
Nondestructive Defect Characterization and Engineering in Contemporary Silicon Power Devices
Rapid Low Temperature Diode Fabrication on P-Type Czochralski Silicon on the Base of Simple Hydrogen Enhanced Thermal Donor Formation Processes
Oriented Silicon Films on Glass Substrates for Device Applications
Radiation Induced Lattice Defects in InGaP/InGaAs P-HEMTs and their Effect on Device Performance
Hydrogen Diffusion and Trapping in Microcrystalline Silicon
Substrate Material for sub-0.25?m Si Technology Comparison of Hydrogen Annealed Wafers and Challengers: Evidence for Dopant Enhanced Diffusion
Atomic Structure of Chalcogen-Hydrogen Complexes in Silicon
Electric Properties of Hydrogenated Polycrystalline CdS-CdSe Solid Solution Films
Hydrogen-Enhanced Transformation of Eletrical and Structural Properties of Thin Subsurface Ion Implanted Silicon Layer in SiO2-Si Systems
Silicon Wafer Technology. Status and Overlook at the Millennium and a Decade Beyond
Self-Assembling Si/SiGe Nanostructures for Light Emitters
The Origin and Efficiency of Dislocation Luminescence in Si and its Possible Application in Optoelectronics
Acoustically Driven Optical Parameters in ?-? Photonic Materials
Growth-Defects and Process-Induced Defects in SiGe-Based Heterostructures
Status, Hopes and Limitations for the Si: Er-based 1.54 ?m Emitter
Oxygen Precipitation Behaviour and Internal Gettering in Epitaxial and Polished Czochralski Silicon Wafers
Grown-in Defects in High Temperature Annealed Si Wafers
Hydrogen Platelets in Crystalline Silicon - Precursors for the 'Smart Cut'
Relaxation of Misfit Induced Strain in Si-Based Heterostructures
Materials Quality and Materials Cost - Are they on a Collision Course?
Defect Engineering in the Development of Advanced Silicon Crystals and Wafers
200 GHz Potential of Si-Based Devices
Silicon Materials Engineering for the Next Millennium
Electrical Characterization of As-Grown and Thermally Treated 8'' Silicon Wafers
Equilibrium Critical Thickness of Strained Buried SiGe Layers
Improved Microwave Absorption Technique for Bulk and Surface Lifetime Analysis in Processed Si Wafers
Defect Control in Nitrogen Doped Czochralski Silicon Crystals
Growth and Characteristics of Low Trap Density Ultrathin [4-7 nm] Gate Oxides for SiGe Quantum Well MOS Structures
Interaction of Crystal Defects with p-n Junctions in Multicrystalline Si Solar Cells
Interaction between Point Defects and Dislocations in SiGe
Radiation Induced Defect Levels in Highly Doped n-Type Si1-xGex Strained Layers
ESR Investigations of Modulation-Doped Si/SiGe Quantum Wells
Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon
X-Ray Diffraction Studies of the Influence of Substitutional Carbon on Si/Ge Interdiffusion in SiGe/Si Superlattices
Radiation Defects Formation in Si
Oxygen and Peculiarities of its Precipitation in Si
The Peculiarities of a Non-Stationary Growth Kinetics in GSMBE and their Influence on Si/ Si1-xGex Interfaces Abruptness
Vacancy-Gettering in Silicon: Cavities and Helium-Implantation
Gettering Centres for Metals and Oxygen Formed in MeV-Ion-Implanted and Annealed Silicon
Iron Gettering on Cavities Produced by Helium Implantation
Gettering at Vacancy and Interstitial-Rich Regions in MeV Ion Implanted Silicon
Laser-Stimulated Gettering Processes in CdxHg1-xTe Solid Solutions
Gettering Strength Assessment Based on Lifetime Measurements
Impurity Gettering Investigation in the Si-SiO2 System
Computer Simulation of Gettering Induced Oxygen Redistribution in SOI Structures
Surface Gettering Background Impurities and Defects in GaAs Plates
Gettering Processes for the Preparation of Silicon Solar Cell Material
Gettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and Annealing
Oxygen and Carbon Clustering in Cz-Si during Electron Irradiation at Elevated Temperatures
Infrared Vibrational Bands Related to Thermal Donors in Germanium
New Infrared Vibrational Bands Related to Interstitial and Substitutional Oxygen in Silicon
Experimental and Numerical Investigation of the Oxygen Precipitation in Mono- and Multicrystalline Solar Silicon
The Segregation Behaviour of Oxygen at Dislocations in Silicon
About the Electrical Properties of Oxygen Phases Segregated by Annealing Cz Silicon in the 600-800 degreesC Range
Positron Trapping by Oxygen-Related Defects in Silicon and Anisotropy of 1D-ACAR Spectra
The Spatial Distribution of SiO2 Precipitates Grown in Silicon at Laser Induced Centres
Effect of External Stress Applied during Annealing on Hydrogen- and Oxygen-Implanted Silicon
The Nature of Precursors for the Thermal Donor Formation in Silicon
Photoluminescence of Erbium-Doped Silicon: Temperature Dependence
Rare Earth Impurities and Impurity-Related Centers in Silicon
Defect Engineering in Si: Ho Light-Emitting Structure Technology
Comparative Analysis of Light Emitting Properties of Si: Er and Ge/Si1-xGex Epitaxial Structures Obtained by MBE Method
Pre-Cavities Defect Distribution in He Implanted Silicon Studied by Slow Positron Beam
Ion Beam Doping of 6H-SiC for High Concentration p-Type Layers
In-Situ Photoexcitation-Induced Perturbations of Defect Complex Concentration and Distribution in Silicon Implanted with Light and Heavy Ions
Interaction of Hydrogen with Radiation-Induced Defects in Cz-Si Crystals
The Influence of Low-Energy Argon Implantation and Out-Diffusion Heat Treatments on Hydrogen Enhanced Thermal Donor Formation in P-Type Czochralski Silicon
Temperature Dependence of the Recombination Activity at Contaminated Dislocations in Si: A Model Describing the Different EBIC Contrast Behaviour
Experimental and Theoretical Study on Interaction Processes for 60 degrees Short Dislocation Segments with Precipitation Centers in Si-Crystals
Ultrasonic Influence on Dislocation Dynamics in Silicon
P-N- Junction Peripheral Current Analysis using Gated Diode Measurements
Investigations of Extended Defects after Sulfur Diffusion in GaAs
On the Reduction of the Critical Thickness in InxGa1-xAs Quantum Well Layers Grown on Vicinal GaAs Substrates
Extraction of Vacancy Parameters from Outdiffusion of Zinc from Silicon
Cu Determination in Silicon Wafers: A Comparison between Electrical and Chemical Measurements
Single Defect Studies by Means of Random Telegraph Signals in Submicron Silicon MOSFETs
Variations of Silicon Melt Convection in a Crucible with Boron Addition
Electrical Impedance Spectroscopy (EIS) as a New Characterisation Tool for the Determination of Electrical Material Parameters in Semiconductors and Insulators
Electron Spin Resonance of the Pb Centers Associated with Oxygen Precipitates in Silicon Crystals
Structural and Electrical Quality of Silicon Bicrystals Fabricated by a Modified Direct Bonding Technique
Formation of Spatial Inhomogeneities as a Result of Heat Treatment in Silicon Doped with Zinc
Magnetoplastic Effect in Compound Semiconductors
Reconstruction of GaAs/AlAs (311) and (100) Interfaces: Raman Study
Simulation of Point Defect Diffusion in Semiconductors
Correlation between Intrinsic Stress Distribution and Crystallographic Defects Density Profile in Czochralski Silicon after CMOS Processing
Silicon Impurity-Related Effects on Structural Defects in III-V Nitrides
Reconstruction of Deep Level Defect Distribution from DLTS Measurements in Compensated Semiconductors
Identification of Process Induced Defects in Silicon Power Devices
Nondestructive Defect Characterization and Engineering in Contemporary Silicon Power Devices
Rapid Low Temperature Diode Fabrication on P-Type Czochralski Silicon on the Base of Simple Hydrogen Enhanced Thermal Donor Formation Processes
Oriented Silicon Films on Glass Substrates for Device Applications
Radiation Induced Lattice Defects in InGaP/InGaAs P-HEMTs and their Effect on Device Performance
Hydrogen Diffusion and Trapping in Microcrystalline Silicon
Substrate Material for sub-0.25?m Si Technology Comparison of Hydrogen Annealed Wafers and Challengers: Evidence for Dopant Enhanced Diffusion
Atomic Structure of Chalcogen-Hydrogen Complexes in Silicon
Electric Properties of Hydrogenated Polycrystalline CdS-CdSe Solid Solution Films
Hydrogen-Enhanced Transformation of Eletrical and Structural Properties of Thin Subsurface Ion Implanted Silicon Layer in SiO2-Si Systems
