Gettering and Defect Engineering in Semiconductor Technology IX

<ul><li>Preface</li><li>Silicon Wafer Requirements for ULSI Device Processing</li><li>Orthogonal Defect Solutions for Silicon Crystal Growth and Wafer Processing</li><li>On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals</li><li>Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect Behavior</li><li>The Effects of Impurities on Extended Defects in Cz Silicon Crystals Grown under Interstitial-Rich Conditions</li><li>Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth</li><li>Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers</li><li>Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies</li><li>Infrared Absorption Analysis of Nitrogen in Czochralski Silicon</li><li>Role of Nitrogen-Related Complexes in the Formation of Defects in N-Cz Silicon Wafers</li><li>Optical Properties of Oxygen Agglomerates in Silicon</li><li>Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO₂ Films: Role of Vacancy-Like Defects</li><li>Silicon Isotope Shifts of the 648-cm^-1 Infrared Absorption Line of Oxygen in Silicon</li><li>Thermal Donors in Silicon Implanted with Rare Earth Impurities</li><li>Interfacial Oxygen Thermodonor Formation in Plasma-Hydrogenated Silicon</li><li>Vibrational Modes of Oxygen Dimers in Germanium</li><li>Oxygen Precipitation in Silicon Doped with Tin</li><li>Hydrostatic Pressure Effect on Redistribution of Oxygen Atoms in Oxygen-Implanted Silicon</li><li>Elastic Instability of Strained Spherical Precipitates as a Cause of Oxide Platelets in Silicon</li><li>Impact of Hydrogen on Oxygen Precipitation and Gate Oxide Integrity after RTA Processing</li><li>Hydrogen Interaction with Transition Metals in Silicon, Studied by Electron Paramagnetic Resonance</li><li>Raman Spectroscopic Analysis of Hydrogen Plasma Treated Czochralski Silicon</li><li>Nitrogen Effect on Hydrogen Penetration into Cz Si during Wet Chemical Etching</li><li>Hydrogen-Related Defects in High-Resistivity Silicon</li><li>Infra Red Absorption by Hydrogen-Passivated Cracks in Silicon</li><li>Atomistic Study of Boron Clustering in Silicon</li><li>Self-Interstitial Kinetics and Transient Phenomena in Si Crystals</li><li>Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose</li><li>Interstitial Diffusion Influence upon Two-Dimensional Boron Profiles</li><li>Incorporation, Diffusion and Agglomeration of Carbon in Silicon</li><li>Suppression of Boron Transient Enhanced Diffusion by C Trapping</li><li>Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling</li><li>Room Temperature Point Defect Migration in Crystalline Si</li><li>Electrical Effects of Point Defect Clouds at Dislocations in Silicon, Studied by Deep Level Transient Spectroscopy</li><li>The Effect of Intrinsic Point Defects upon Dislocation Motion in Silicon</li><li>Stress-Induced Redistribution of Point Defects in Silicon Device Structures</li><li>Characterization of Interstitial-Related Bulk Defects in p^- Silicon Substrates by Epitaxial Deposition</li><li>Monitoring of Defects in Thermal Oxides during Electrical Stress</li><li>Formation of Shallow Donors in Stress-Annealed Silicon Implanted with High-Energy Ions</li><li>A Study of the Conversion of the VO to the VO₂ Defect in Heat-Treated Silicon under Stress</li><li>Passivation of Al/Si Interface by Chemical Treatment: Schottky Barrier Height and Plasma Etch Induced Defects</li><li>Impact of Compressive Stress on the Formation of Thermal Donors in Heat-Treated Silicon</li><li>Helium Bubble Growth in Silicon: Ripening or Bubble Motion and Coalescence?</li><li>Void Shrinkage during Thermal Oxidation of Silicon</li><li>Gettering Induced by Helium Implantation: Application to a Device</li><li>Defects Created by Helium Implantation at Different Temperatures in Silicon</li><li>Damage Evolution in Helium-Hydrogen Co-Implanted (100) Silicon</li><li>Gold Gettering by H⁺ or He⁺⁺ Ion Implantation Induced Cavities and Defects in Cz Silicon Wafers</li><li>Influence of Depth in Helium Desorption from Cavities Induced by ³He Implantation in Silicon</li><li>Dopant Segregation on Cavities Induced by Helium Implantation: The Case of Boron and Phosphorus</li><li>Hydrogen Redistribution and Void Formation in Hydrogen Plasma Treated Czochralski Silicon</li><li>Precipitation Kinetics and Recombination Activity of Cu in Si in the Presence of Internal Gettering Sites</li><li>Iron Solubility in Boron-Doped Silicon and Fe Gettering Mechanism in p/p⁺ Epitaxial Wafers</li><li>Copper-Defect and Copper-Impurity Interactions in Silicon</li><li>Efficiency of Intrinsic Gettering for Copper in Silicon</li><li>Nickel Gettering in Silicon: Role of Oxygen</li><li>Electrical Activity of Dislocations in Si Decorated by Ni</li><li>Comparison of Nickel and Iron Gettering in Cz Silicon Wafers</li><li>Recombination Lifetimes of Iron-Contaminated Silicon Wafers: Characterization Using a Single Set of Capture Cross-Sections</li><li>Internal Gettering in Silicon: Experimental and Theoretical Studies Based on Fast and Slow Diffusing Metals</li><li>The Realization of Uniform and Reliable Intrinsic Gettering in 200mm p- and p/p- Wafers for a Low Thermal Budget 0.18?m Advanced CMOS Logic Process</li><li>Application of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si Wafers</li><li>Defect Engineering and Prevention of Impurity Gettering at R_P/2 in Ion-Implanted Silicon</li><li>Gettering Technology Based on Porous Silicon</li><li>Platinum Silicide Precipitate Formation During Phosphorus Diffusion Gettering in Silicon</li><li>Impact of a Cooling Process on the Dopant Activity of Platinum in Silicon</li><li>Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon</li><li>Ultra Low-Level Ion Implantation Damage Detected by p-n Junctions Biased above Breakdown</li><li>Radiation-Induced Electronic Defect Levels in High-Resistivity Si Detectors</li><li>p-n Junction Leakage in Neutron-Irradiated Diodes Fabricated in Various Silicon Substrates</li><li>Radiation Damage in MOS Structures, Irradiated with High-Energy Heavy Ions and Fast Neutrons, with Regard to Charge DLTS and C-V Measurements</li><li>Study of the Effect of Carrier Cross-Sections, on the Leakage Current of Irradiated Silicon Detectors, using the Exchange Charge Model</li><li>Radiation Damage in npn Si Transistors due to High-Temperature Gamma Ray and 1-MeV Electron Irradiation</li><li>Impact of High-Energy Particle Irradiation on Polycrystalline Silicon Films</li><li>Proton Irradiation Effects on Standard and Oxygenated Silicon Diodes</li><li>Existence of an Epitaxially Ordered Phase in the Buried Oxide of SIMOX Wafers</li><li>Hydrogen-Related Phenomena in SOI Fabricated by Using H⁺-Ion Implantation</li><li>Hydrogen-Induced Shallow Donors in Silicon and Silicon-on-Insulator Structures Formed by Hydrogen Slicing</li><li>Properties of Silicon Film in a Silicon-on-Glass Structure</li><li>Structural and Photoluminescence Properties of H⁺ Ion-Implanted Silicon-on-Insulator Structures Formed by Hydrogen Slicing</li><li>Charge Relaxation at Oxygen-Enriched Silicon Grain Boundaries</li><li>Characterization of SiC Grown on Si(111) by Supersonic C₆₀ Beams</li><li>Effects of Pulsed Electron Beam Annealing on Radiation Damage in N Doped a-SiC:H Films Deposited by PECVD</li><li>Cavities in He-Implanted SiC</li><li>Study of Relaxed Si_0.7Ge_0.3 Buffers, Grown on Patterned Silicon Substrates, by Raman Spectroscopy</li><li>On the Properties of Divacancies in Si_1-xGe_x</li><li>Kinetics of Surface Processes and Mechanisms of Alloy Intermixing Near Interfaces in Si(Ge)/Si_1-xGe_x Structures Grown by Molecular Beam Epitaxy with Combined Sources</li><li>Influence of Ge Content on Electrical Properties: Sheet Resistance and Hall Mobility in Ion Beam Synthesized Si_1-xGe_x Alloy</li><li>Defect-Related Current Instabilities in InAs/GaAs and AlGaAs/GaAs Structures?</li><li>Segregation of Mg Implanted into InAs: Influence of the Internal Elastic Stresses</li><li>Defects in CdTe Induced by Powerful Laser Radiation</li><li>Phonon-Plasmon Interaction in Tunnelling GaAs/AlAs Superlattices Grown on (311) and (100) Substrates</li><li>Radiation-Stimulated Ordering Effect in CdS Crystals</li><li>The Laser-Stimulated Modification of the Surfaces of Polycrystalline CdTe Layers</li><li>Electroluminescence of Si Quantum Dots in MOS Structures</li><li>Blue-Green Photoluminescence from Silicon Dioxide Films Containing Ge⁺ Nanocrystals Formed under Conditions of High Hydrostatic Pressure Annealing</li><li>Silicon Nanoclusters in Thermal Oxide Films on Silicon</li><li>Luminescence from Si Nanocrystals and Er³⁺ Ions Embedded in Resonant Cavities</li><li>Temporal Characteristics of the Optical Storage Effect in Si:Er</li><li>Effect of Selective Doping on Photo- and Electroluminescence Efficiency in Si:Er Structures</li><li>The Structure and Photoluminescence of Erbium-Doped Nanocrystalline Silicon Thin Films Produced by Reactive Magnetron Sputtering</li><li>Defect Engineering in the Technology of Light-Emitting Structures Based on Monocrystalline Si Implanted with Rare Earth Ions</li><li>Excitation Cross-Section of Erbium in Semiconductor Matrices under Optical Pumping</li><li>Spectroscopic Characterisation of Erbium Impurity in Crystalline Silicon</li><li>Nanocrystal MOS Memories Obtained by LPCVD Deposition of Si Nanograins</li><li>Memory Effects in Single-Electron Nanostructures</li><li>Nanocrystal MOS with Silicon-Rich Oxide</li><li>Self-Orientation of Silicon Nanocrystals Created under Pulse Laser Impact in Stressed ?-Si:H Films on Glass Substrates</li><li>Nucleation of Nanostructures from Surface Defects on Silicon</li><li>Crystalline Silicon for Solar Cells</li><li>Measurement of the Normalized Recombination Strength of Dislocations in Multicrystalline Silicon Solar Cells</li><li>Oxygen Annealing Behavior in Multicrystalline Silicon</li><li>Three-Dimensional Emitter Based on Locally Enhanced Diffusion (TREBLE) Structure: Modeling and Formation</li><li>Effective Gettering Mechanisms in Solar Multicrystalline Materials</li><li>Strain Characterisation at the nm Scale of Deep Sub-Micron Devices by Convergent-Beam Electron Diffraction</li><li>Gate-Oxide Integrity Evaluation Using Non-Ideal Metal-Oxide-Silicon Capacitor Structures</li><li>Lock-In IR-Thermography - A Novel Tool for Material and Device Characterization</li><li>Characterisation of Surface and Near-Surface Regions in High-Purity Cz Si</li><li>A Technique for Delineating Defects in Silicon</li><li>SEM Vision Periodic Defect Review and Characterization after Inter-Metal Dielectric Deposition</li><li>Ellipsometric Study of Ion-Implantation Damage in Single-Crystal Silicon - An Advanced Optical Model</li><li>Evaluation of Effective Carrier Lifetime in Epitaxial Silicon Layers</li><li>Spatial Distribution of Strain and Phases in Si Nano-Indentation Analysed by Raman Mapping</li><li>Structure and Stability of Thin Praseodymium Oxide Layers on Si(001)</li><li>Structural Investigations of Praseodymium Oxide Epitaxially Grown on Silicon</li><li>1D-ACAR Studies of As-Grown Impurity Centers in Silicon</li><li>Characterization of Interfacial States at Silicon Bicrystals</li><li>Minority Carrier Diffusion Lengths in Silicon Doped Gallium Nitride Thin Films Measured by Electron Beam Induced Current</li></ul>