Defects in Semiconductors 19

<ul><li>Acknowledgements</li><li>Recent Measurements and Theory Relating to Impurity-Induced LVMS in GaP and GaAs</li><li>Optically-Induced Defects in Si-H Nanoparticles</li><li>Defects and Doping in III-V Nitrides</li><li>A Programme for the Future?</li><li>The Hydrogen-Saturated Self-Interstitial in Silicon and Germanium</li><li>Matrix-Induced Isotope Shift of a Vibrational Mode of Interstitial Oxygen in Germanium</li><li>Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium</li><li>DLTS Combined with Perturbed Angular Correlation (PAC) on Radioactive ¹¹¹In Atoms in Ge</li><li>Microscopic Study of the Vacancy and Self-Interstitial in Germanium by PAC</li><li>Localization of Nondegenerate Electrons at Random Potential of Charged Impurities</li><li>Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge</li><li>Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As</li><li>Defects in SiGe</li><li>Acceptor States in Boron Doped SiGe Quantum Wells</li><li>Substitutional Carbon in Ge and Si_1-xGe_x.</li><li>Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge</li><li>Optical Investigation of Ge-Rich Ge_1-xSi_x (0? x ? 0.1) Alloys</li><li>Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si_1-xGe_x</li><li>Lattice Defects in Si_1-xGe_x Epitaxial Diodes Induced by 20-MeV Alpha Rays</li><li>Positron Annihilation Study of Electron-Irradiated Silicon-Germanium Bulk Alloys</li><li>Electronic Properties of Defects Introduced in n- and p-Type Si_1-xGe_x During Ion Etching</li><li>The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy</li><li>Gold-Related Levels in Relaxed Si_1-xGe_x Alloy Layers: A Study of the Pinning Effect</li><li>Dislocation-Related Electronic States in Strain-Relaxed Si_1-xGe_x/Si Epitaxial Layers Grown at Low Temperature</li><li>Dislocation Activities in Bulk GeSi Crystals</li><li>Schottky Diodes on Si_1-x-yGe_xC_y Alloys: Measurement of Band Off-Set by DLTS</li><li>Molecular-Dynamics Simulations of Microscopic Defects in Silicon</li><li>Comparison of Muonium (Hydrogen) Dynamics in Germanium and Silicon</li><li>Hydrogenation and Passivation of B in Si by Boiling in Water Pressurized up to 10 ATM</li><li>Low Temperature Hydrogen Diffusion in Silicon: Influence of Substrate Quality and the Surface Damage</li><li>Mechanism of Ultrasonic Enhanced Hydrogenation in Poly-Si Thin Films</li><li>Hydrogen Molecules in Crystalline Silicon</li><li>Thermal Stability of Hydrogen Molecule in Crystalline Silicon</li><li>Emission and Capture Kinetics for a Hydrogen-Related Negative-U Center in Silicon: Evidence for Metastable Neutral Charge State</li><li>IR Studies of Si-H Bond-Bending Vibrational Modes in Si</li><li>Optical Absorption Due to Hydrogen Bound to Interstitial Si in Si Crystal Grown in Hydrogen Atmosphere</li><li>Trapping Site of Hydrogen Molecule in Crystalline Silicon</li><li>Formation and Structure of Hydrogen Molecules in Crystalline Si</li><li>Structure and Charge-State-Dependent Instability of a Hydrogen-Carbon Complex in Silicon</li><li>The Trapping of Hydrogen at Carbon Defects in Silicon</li><li>The M-Line (760.8 me V) Luminescence System Associated with the Carbon-Hydrogen Acceptor Centre in Silicon</li><li>Interstitial Carbon-Hydrogen Defects in Silicon</li><li>Low-Temperature Migration of Hydrogen and Interaction with Oxygen</li><li>Anomalous Shift of the 1075 cm^-1 Oxygen-Hydrogen Defect in Silicon</li><li>Vibrational Absorption from Oxygen-Hydrogen (O_i-H₂) Complexes in Hydrogenated CZ Silicon</li><li>The I Centre: A Hydrogen Related Defect in Silicon</li><li>Theory of Gold-Hydrogen Complexes in Silicon</li><li>Electrically Active Silver-Hydrogen Complexes in Silicon</li><li>Palladium-Hydrogen Related Complexes in Silicon</li><li>Effects of Hydrogen Plasma on Dislocation Motion in Silicon</li><li>Hydrogenation of Copper Related Deep States in n-Type Si Containing Extended Defects</li><li>Hydrogenation of Deep Defect States in n-Type Si Containing Extended Defects and Transition Metal (Ni or Fe)</li><li>Metastable Defects and Recombination in Hydrogenated Amorphous Silicon</li><li>Tracing Diffusion by Laplace Deep-Level Spectroscopy</li><li>Defects in AS-Grown Silicon and their Evolution During Heat Treatments</li><li>An Investigation of the Possibility that Oxygen Diffusion in Czochralski Silicon is Catalyzed during Clustering</li><li>Temperature-Dependent Widths of Infrared and Far-Infrared Absorption Lines of Oxygen in Silicon</li><li>The Oxygen Dimer in Silicon: Some Experimental Observations</li><li>Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 degreesC</li><li>High-Field EPR Spectroscopy of Thermal Donors in Silicon</li><li>Shallow Thermal Donors in Annealed CZ Silicon and Links to the NL10 EPR Spectrum: The Relevance of H, Al and N Impurities</li><li>Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 degreesC</li><li>Local Vibrational Modes of Weakly Bound O-H Complexes in SI</li><li>Phonon Scattering in Heat-Treated Cz-Silicon</li><li>Determination of Stoichiometry and Oxygen Content in Platelike and Octahedral Oxygen Precipitates in Silicon with FT-IR Spectroscopy</li><li>Influence of the Li Concentration on the Photoluminescence Spectra of Neutron-Irradiated Silicon:Passivation of Radiation Induced Centers</li><li>Electric-Dipole Spin Resonance of Be-Doped Silicon</li><li>Cadmium-Related Defects in Silicon: Electron-Paramagnetic-Resonance Identification</li><li>Iron in p-Type Silicon: A Comprehensive Model</li><li>Moessbauer Spectroscopy of Fe in Silicon with the Novel Laser-Ionized ⁵⁷Mn⁺ Ion Beam at Isolde</li><li>Recombination-Enhanced Fe Atom Jump of Fe-Acceptor Pairs in Si</li><li>Precipitation of Iron in FZ and CZ Silicon</li><li>The Orthorhombic FeIn Complex in Silicon</li><li>Copper in Silicon: Quantitative Analysis of Internal and Proximity Gettering</li><li>A Study of the Copper-Pair Related Centers in Silicon</li><li>The Photoluminescence of Pt-Implanted Silicon</li><li>Identification of the Si:Au and Si:Pt 1S_3/2(?₈)+? Phonon-Assisted Fano Resonance</li><li>Silver-Related Donor Defect in Silicon</li><li>Isolated Substitutional Silver and Silver-Induced Defects in Silicon: An Electron Paramagnetic Resonance Investigation</li><li>Pseudo or Deep Donor Excitation Spectra in Silicon</li><li>Vacancies and Interstitial Atoms in e?-Irradiated Silicon</li><li>Vacancy Aggregates in Silicon</li><li>Identification of VH in Silicon by EPR</li><li>Novel Luminescent Centres in Cadmium Doped Silicon</li><li>Defect Clusters in Silicon: Impact on the Performance of Large-Area Devices</li><li>Modeling of Self-Interstitial Clusters and their Formation Mechanism in Si</li><li>Self-Interstitials in Irradiated Silicon</li><li>High Resolution EELS Study of Extended Defects in Silicon</li><li>Electron Irradiation Effects in Silicon Thin Foils Under Ultra-High Vacuum Environment</li><li>Application of Spin Dependent Recombination for Investigation of Point Defects in Irradiated Silicon</li><li>Electrical and Optical Characterisation of Defects Induced in Epitaxially Grown n-Si During 1 keV Noble Gas Ion Bombardment</li><li>Fano Resonance in a Vibronic Sideband in Silicon</li><li>Frenkel Pairs and Impurity-Defect Interactions in p-Type Silicon Irradiated with Fast Electrons and Gamma-Rays at Low Temperatures</li><li>Impurity-Vacancy Complexes Formed by Electron Irradiation of Czochralski Silicon</li><li>Luminescence Centers in High-Energy Ion-Implanted Silicon</li><li>Performance Degradation of Microcrystalline Silicon-Based p-i-n Detectors Upon He⁴ Irradiation</li><li>Persistent Excited Conductivity Induced by Proton Irradiation in a-Si:H</li><li>Photoluminescence Centers Associated with Noble-Gas Impurities in Silicon</li><li>Implantation of Reactive and Unreactive Ions in Silicon</li><li>Photoluminescence Vibrational Spectroscopy of Defects Containing the Light Impurities Carbon and Oxygen in Silicon</li><li>Raman Scattering Measurements in Neutron-Irradiated Silicon</li><li>Recombination Centers in Electron Irradiated Si and GaAs</li><li>Study of a Li- and C-Related Center Formed at High Annealing Temperatures in Neutron-Irradiated FZ Silicon Doped with Li</li><li>The Influence of Accumulated Defects on the Lateral Spread of Implanted Ions</li><li>Structural Change and Relaxation Processes of Tetrahedral Point Defects</li><li>The Jahn-Teller Effect and the Structure of Monovacancies in Si, SiC and C</li><li>Transient Lattice Vibration Induced by Successive Carrier Captures at a Deep-Level Defect and the Effect on Defect Reactions</li><li>Characterisation of Recombination Centres in Solar Cells by DLTS</li><li>Defect-Engineering Rad-Hard Detectors for the CERN LHC</li><li>Theory of 3d Transition Metal Defects in 3C-SiC</li><li>A Deep Photoluminescence Band in 4H SiC Related to the Silicon Vacancy</li><li>Thermal Activation Energies for the Three Inequivalent Lattice Sites for the B_Si Acceptor in 6H-SiC</li><li>Optical Absorption and Zeeman Study of 6H-SiC:Cr</li><li>High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC</li><li>Gas and Heat Treatment Effects on the Defect Structure of a-SiC:H Films</li><li>Capacitance Spectroscopy of Deep Centres in SiC</li><li>Native and Electron Irradiation Induced Defects in 6H-SiC</li><li>Raman Scattering Analysis of Defects in 6H-SiC Induced by Ion Implantation</li><li>Vacancy-Type Defects in Proton-Irradiated SiC</li><li>Theoretical Studies on Defects in SiC</li><li>Formation and Relaxation of Hydrogen-Related Defects in the Subsurface Region of Diamond Films</li><li>Hydrogen and Hydrogen-Like Defects in Diamond</li><li>Fine Structure of the Boron Bound Exciton in Diamond</li><li>Investigation of Ion-Implanted Boron in Diamond</li><li>Isotopic Shifts of the N3 Optical Transition in Diamond</li><li>Breakdown of the Vacancy Model for Impurity-Vacancy Defects in Diamond</li><li>A First Principles Study of Interstitial Si in Diamond</li><li>Radiation Damage of Silicon and Diamond by High Energy Neutrons, Protons and ? Particles</li><li>Study of Defects in Diamond Films by Electrical Measurements</li><li>Valence Controls and Codoping for Low-Resistivity n-Type Diamond by Ab Initio Molecular-Dynamics Simulation</li><li>Intrinsic Modulation Doping in InP-Based Heterostructures</li><li>Pressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP Heterostructures</li><li>Study of Iron-Related Defects in SI-InP by Positron Annihilation Spectroscopy</li><li>Homogeneity of Fe-Doped InP Wafers Using Optical Microprobes</li><li>Osmium Related Deep Levels in p-InP and their Interaction with Alpha Radiation</li><li>A Sharp Defect-Annealing Stage Below Room Temperature in Irradiated N-Type Indium Phosphide</li><li>Alpha Radiation-Induced Deep Levels in p-InP</li><li>Site Stability, Diffusion, and Charge Dynamics for Muonium in GaAs</li><li>Structure and Reorientation of the Si_As-H and Zn_Ga-H Complexes in Gallium Arsenide</li><li>Ab Initio Study of the C_As Local Oscillator in Gallium Arsenide</li><li>Spectroscopy of Nitrogen-Related Centers in Gallium Arsenide</li><li>Atomic Configuration of Oxygen Negative-U Center in GaAs</li><li>Ga Vacancies as Compensating Centers in Homogeneously or ?-Doped GaAs(Si) Layers</li><li>Positron Annihilation and Scanning Tunneling Microscopy Used to Characterise Defects in Highly Si-Doped GaAs</li><li>Chemical Trends in Electronic Properties of Arsenic Vacancy-3d Transition Metal Pairs in Gallium Arsenide</li><li>Perturbed Angular Correlation Measurements and Lattice Site Location of Br in GaAs</li><li>Equilibrium Vacancies in Te-Doped GaAs Studied by Positron Annihilation</li><li>Spectroscopic Investigation of Neutral Niobium in GaAs</li><li>Yb Luminescence Centres in MBE-Grown and Ion-Implanted GaAs</li><li>Arsenic Interstitial Pairs in GaAs</li><li>Electrical Properties of Low Temperature Grown GaAs</li><li>Traps Found in GaAs MESFETs: Properties Location and Detection</li><li>Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors</li><li>Creation of Ga_As Antisites in GaAs by Transmutation of Radioactive ⁷¹As_As to Stable ⁷¹Ga_As</li><li>Defect Control in As-Rich GaAs</li><li>As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature</li><li>Electrically Detected Magnetic Resonance at Different Microwave Frequencies</li><li>Metastable Antisite Pair in GaAs</li><li>Theoretical Study of Antistructure Defects in GaAs</li><li>Study of Plastically Deformed Semiconductors by Means of Positron Annihilation</li><li>The Micro Structure of the EL2 Defect in GaAs - A Different Look to Former Spin Resonance Data</li><li>Detection and Identification of the EL2 Metastable in GaAs</li><li>Defects in Thick Epitaxial GaAs Layers</li><li>Effects of Copper Diffusion on the Native Defect EL2 in GaAs</li><li>EL2 Induced Enhancement of the Donor Acceptor Pair Luminescence in GaAs</li><li>Observation of Persistent Electron Capture in N-Type Gallium Arsenide Studied by Optically Detected Magnetic Resonance</li><li>ODMR Investigation of Proton Irradiated GaAs</li><li>Uniaxial-Stress Symmetry Studies on the E1, E2 and E3 Irradiation-Induced Defects in Gallium Arsenide</li><li>Magnetic Resonance and Positron Annihilation of Intrinsic Acceptors in ITC-Treated GaAs</li><li>Defects in Neutron Irradiated, LEC Semi-Insulating GaAs</li><li>Electrical Characterization of Defects Introduced During Plasma-Based Processing of GaAs</li><li>Metastable Charge Recovery in Plasma-Irradiated ?-GaAs</li><li>Metastable Amorphous Structure in Ion Implanted GaAs</li><li>Theory of Nitrogen-Hydrogen Complexes in GaP</li><li>Photoluminescence, Optical Absorption, and EPR Studies of the Co²⁺-S_P Pair Defect in GaP</li><li>Resonance-Mode Phonon Replica in the Optical Spectra of Transition-Metal Impurities in GaP</li><li>GaN Grown Using Trimethylgallium and Triethylgallium</li><li>ODMR Studies of AS-Grown and Electron-Irradiated GaN and AlN</li><li>Electrical and Optical Characterization of Defects in GaN Generated by Ion Implantation</li><li>Implantation Doping and Hydrogen Passivation of GaN</li><li>Electrically and Optically Detected Magnetic Resonance in GaN-Based LEDs</li><li>Donor-Acceptor Pair Transitions in GaN</li><li>AB Initio Studies of Atomic-Scale Defects in GaN and AlN</li><li>Photoluminescence Dynamics in the Near Bandgap Region of Homoepitaxial GaN Layers</li><li>Zeeman Study of the 0.9 eV Emission in AlN and GaN</li><li>A First-Principles Study of Mg-Related Defects in GaN</li><li>Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN</li><li>On the Origin of the Yellow Donor-Acceptor Pair Emission in GaN</li><li>Blue Emission in Mg Doped GaN Studied by Time Resolved Spectroscopy</li><li>GaN Doped with Sulfur</li><li>Identification of Iron Transition Group Trace Impurities in GaN Bulk Crystals by Electron Paramagnetic Resonance</li><li>Local Vibrational Modes at Transition-Metal Impurities in Hexagonal AlN and GaN Crystals</li><li>Local Vibrational Modes at As_N in Cubic GaN: Comparing Ab-Initio Calculations to a Semi-Empirical Model</li><li>A Codoping Method in GaN Proposed by Ab Initio Electronic-Structure Calculations</li><li>Photoluminescence of Donor Acceptor Pair Transitions in Hexagonal and Cubic MBE-Grown GaN</li><li>Raman Scattering from Defects in GaN</li><li>Structural and Electrical Properties of Threading Dislocations in GaN</li><li>Defects Analysis in Strained InAlAs and InGaAs Films Grown on (111)B InP Substrates</li><li>Irradiation Induced Lattice Defects in In_0.53Ga_0.47As Pin Photodiodes</li><li>Acceptor-Hydrogen Interaction in InAs</li><li>Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN</li><li>Effect of Neutron Irradiation on Ga-Based Semiconductors</li><li>Polaron Coupling for Sulphur Impurity in GaSb</li><li>Resonant Interaction Between Local Vibrational Modes and Extended Lattice Phonons in AlSb</li><li>Defect Reactions in Low Temperature Electron Irradiated AlAs Investigated by Measurements of the Lattice Parameter</li><li>Transition from Tunneling to Poole-Frenkel Type Transport in Aluminum-Nitride</li><li>Growth Surface Dependence of Cathodoluminescence of Cubic Boron Nitride</li><li>N-Vacancy Defects in c-BN and w-BN</li><li>Multiphonon-Assisted Tunnel Ionisation of Deep Impurities in High-Frequency Electric Field</li><li>Long-Range Lattice Relaxation for Donor Centers in Supercell Method</li><li>Decay Kinetics of Growth-Induced Alignment of the First Neighbor Shell of C_As in Al_xGa_1-xAs</li><li>Plausible Evidence of Existence of Deep Acceptors in Si ?-Doped AlGaAs</li><li>Magneto-Optical and Magnetic Resonance Investigations of Intrinsic Defects in Electron-Irradiated n-Type Al_xGa_1-xAs</li><li>Gallium Interstitials in GaAs/AlGaAs Heterostructures Investigated by Optically and Electrically Detected Magnetic Resonance</li><li>ODMR Investigations of Ge Acceptors in p-Type Al_0.4Ga_0.6As</li><li>Inverted Charge States of Anion and Cation-Site Vacancies in Zinc Blende Semiconductors:Theory</li><li>Degradation in II-VI Laser Diodes</li><li>Defect Characterization of II-VI Compound Semiconductors Using Positron Lifetime Spectroscopy</li><li>Defect Structures in Heavily In-Doped II-VI Semiconductors</li><li>The Role of Cation Vacancy in Compensation of II-VI Compounds by Fast Diffusors - Example of Cu in CdS</li><li>Experimental Evidence for the Two-Electron Nature of In-Related DX States in CdTe</li><li>Nature of Dislocation-Related Deep Level Defects in CdS</li><li>NMR Study of Carrier States and Trapping Complexes in the Transparent Conductor ZnO:M_III</li><li>Cathodoluminescence Study on the Hydrogenation of ZnO Luminescence</li><li>Observation of Frenkel Pairs on Both Sublattices of Electron Irradiated ZnSe</li><li>Interface Defects and their Effect on the Electrical Properties of ZnSe/GaAs Heterojunctions Grown by MBE</li><li>Donor Doping of ZnSe: Lattice Location and Annealing Behavior of Implanted Boron</li><li>Determination of the Lattice Site of Nitrogen after Implantation into ZnSe</li><li>Charge Transfer at Ti Ions in ZnTe</li><li>Bistable Centers in CdMnTeSe:In and CdMnTe:Ga Crystals Studied by Light-Induced Gratings</li><li>Deep Levels in Cd_0.99Mn_0.01Te:Ga</li><li>Vacancy-Type Defects in Electron and Proton Irradiated II-VI Compounds</li><li>UV Enhanced and Solar Blind Photodetectors Based on Large-Band-Gap Materials</li><li>Lattice Relaxation of In Donors in CdF₂</li><li>Shallow Electron Centres in CdF₂:M³⁺ and Silver Halides</li><li>EPR Investigation of Metastable Donor States in CdF₂:In, Ga</li><li>Photoinduced Magnetism in CdF₂ with Bistable Donors: The Clue for the Negative U?</li><li>Evidence of Metastable Deep Acceptors in AgGaS₂ from Time-Resolved Emission</li><li>A Positron Lifetime Study of Lattice Defects in Chalcopyrite Semiconductors</li><li>Magnetooptical Characterization of CuIn(Ga)Se₂</li><li>Defects Spectroscopy in ss-Ga₂O₃</li><li>Bistability of Oxygen Vacancy in Silicon Dioxide</li><li>Energy Transfer Processes at Erbium Ions in Silicon</li><li>Energy Transfer Rate Between Erbium 4? Shell and Si Host</li><li>Photoluminescence Study of Erbium in Silicon with a Free-Electron Laser</li><li>Direct Evidence for Stability of Tetrahedral Interstitial Er in Si up to 900 degreesC</li><li>Photo- and Electroluminescence of Erbium-Doped Silicon</li><li>Donor Centers in Er-Implanted Silicon</li><li>Structural Defects and Photoluminescence in Dislocation-Rich Erbium-Doped Silicon</li><li>Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures</li><li>High Temperature Luminescence Due to Er in Porous Si</li><li>Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals</li><li>1.54 ?m Luminescence in Er and Er+O Implanted 6H SiC</li><li>Erbium Related Defects in Gallium Arsenide</li><li>Electron Spin Resonance of Er-Oxygen Complexes in GaAs</li><li>Er Centers in GaAs Studied by Optical Spectroscopy Under Hydrostatic Pressure</li><li>EXAFS Measurement on Local Structure Around Erbium Atoms Doped in GaAs with Oxygen Co-Doping</li><li>Luminescence and Annealing Studies of Er-Implanted GaN with and without Oxygen Co-Doping</li><li>Er-Luminescence in MBE-Grown AlGaAs</li><li>Crystal-Field Transitions of Nd³⁺ and Er³⁺ in Perovskite-Type Crystals</li><li>Excitation and De-Excitation of Erbium Ions in Semiconductor Matrices</li><li>Mechanism of Generation of F-F Radiation in Semiconductor Heterostructures</li><li>Infrared Induced Emission From Silicon Quantum Wires</li><li>Acceptor States in Boron Doped SiGe Quantum Wells</li><li>Coulomb Interaction between Carriers Localized in InAs/GaAs Quantum Dots and on Point Defects</li><li>Influence of Erbium Doping on Structure and Optical Properties of the InGaAs/GaAs Superlattices</li><li>Defect Formation During Laser Induced Intermixing of GaAs/AlGaAs Multiple-Quantum-Well Structures</li><li>Localized Epitaxy for Vertical Cavity Surface Emitting Laser Applications</li><li>The Long Wavelength Luminescence Observation from the Self-Organized InGaAs Quantum Dots Grown on (100) GaAs Substrate by Metalorganic Chemical Vapor Deposition.</li><li>Deep Hole Traps in Be-Doped Al_0.5Ga_0.5 As MBE Layers</li><li>Nanotubes and Pinholes in GaN and their Formation Mechanism</li><li>Defect-Related Recombination Processes in Low-Dimensional Structures of ZnCdSe/ZnSe, CdTe/CdMnTe and GaAs/AlGaAs</li><li>Study of Hole Traps in p-Type ZnSe and ZnSSe Epilayers by DLTS and Admittance Spectroscopy</li><li>Auger-Type Nonradiative Recombination Processes in Bulk and in Quantum Well Structures of II-VI Semiconductors Containing Transition Metal Ions</li><li>Spin-Dependent Processes in Self-Assembly Impurity Quantum Wires</li><li>Comparison between AS-Grown and Annealed Quantum Dots Morphology</li><li>EPR Studies of Magnetic Superlattices</li><li>Er Diffusion and Er-Induced Ga-Al Interdiffusion in GaAs/AlGaAs Quantum Structures</li><li>Ground and Excited States of D? Centres in Semiconductor Quantum Dots</li><li>Electron Spin Resonance Features of the P_b1 Interface Defect in Thermal (100)Si/SiO₂</li><li>Silicon Surface Defects: The Roles of Passivation and Surface Contamination</li><li>Heat-Treatment Induced Modifications of Porous Silicon</li><li>Luminescence Due to Electron-Hole Condensation in Silicon-On-Insulator and its Application to Defect and Interface Characterization</li><li>Deep Electronic States at the Inverted AlAs/GaAs Interface Under Different Growth Modes</li><li>TEM-Study of Frank Partial Dislocations in ZnSe/GaAs(001) Caused by Substrate-Preparation</li><li>Defect Formation and Electronic Transport at AlGaN/GaN Interfaces</li><li>Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al₂O₃(0001) Studied by TEM</li><li>Formation Kinetics of the Al-Related Shallow Thermal Donors: A Probe for Oxygen Diffusion in Silicon</li><li>Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium</li><li>The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon</li><li>EPR Evidence of Hydrogen-Enhanced Diffusion of Aluminum in Silicon</li><li>Segregation of Gold at Dislocations Confirmed by Gold Diffusion into Highly Dislocated Silicon</li><li>Annealing of Low-Temperature Substitutional Gold in Silicon: Ring-Diffusion of Substitutional Gold in Silicon</li><li>Rate Limiting Mechanism of Transition Metal Gettering in Multicrystalline Silicon</li><li>Intrinsic Point Defect Engineering in Silicon High-Voltage Power Device Technology</li><li>Influence of the Dislocation Loops on the Anomalous Diffusion of Fe Implanted into InP</li><li>Lithium Induced Vacancy Formation and its Effect on the Diffusivity of Lithium in Gallium Arsenide</li><li>Ab-Initio Investigations on Diffusion of Halogen Atoms in GaAs</li><li>Low Temperature Intrinsic Diffusion Coefficient of Lithium in GaAs</li><li>Low Temperature Impurity Diffusion into Large-Band-Gap Semiconductors</li><li>Background Doping Effects on Zn Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures</li></ul>