Silicon Quantum Integrated Circuits
Silicon-Germanium Heterostructure Devices: Basics and Realisations
1st Edition
Published on 11. December 2005
XII, 364 pages
978-3-540-26382-1 (ISBN)
Description
Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation. The basic physical principles, materials, technological aspects, and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.
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Other editions
Additional editions
E. Kasper | D.J. Paul
Silicon Quantum Integrated Circuits
Silicon-Germanium Heterostructure Devices: Basics and Realisations
Book
10/2010
Springer
€160.49
Shipment within 7-9 days
E. Kasper | D.J. Paul
Silicon Quantum Integrated Circuits
Silicon-Germanium Heterostructure Devices: Basics and Realisations
Book
01/2005
Springer
€160.49
Shipment within 10-15 days
Content
Material Science.- Resumé of Semiconductor Physics.- Realisation of Potential Barriers.- Electronic Device Principles.- Heterostructure Bipolar Transistors - HBTs.- Hetero Field Effect Transistors (HFETs).- Tunneling Phenomena.- Optoelectronics.- Integration.- Outlook.
