High-Speed Electronics
Basic Physical Phenomena and Device Principles Proceedings of the International Conference, Stockholm, Sweden, August 7-9, 1986
Published on 8. March 2013
X, 234 pages
978-3-642-82979-6 (ISBN)
Description
In the past, a number of Satellite Conferences have been held in con nection with the International Conference on Physics of Semiconductors, covering selected fields of interest. In 1986, when the main conference was held in Stockholm, Sweden, new. phenomena had to be discussed: super lattices, hot 'electron phenomena and new device structures for high-speed applications. The aim was to select topics which would be of interest to physicists as well as to electronics engineers. Therefore a Satellite Con ference on H!gh-Speed Electronics, Basic Physical Phenomena and Device Principles, was arranged at Saltjobaden, a coastal resort near Stockholm. An organizing committee was established after the first suggestion made by Professor Grimmeiss from the University of Lund, Sweden, and some preliminary discussions on the Conference format. A Program Committee was established to be responsible for the further selection of the invited talks, the regular papers and poster presentation. The aim was to have a broad spectrum of contributions to attract physicists as well as device oriented engineers and to stimulate discussions among the participants. These Proceedings contain all oral and poster presentations, with em phasis on the invited talks, which give a competent overview of the field. The fast publication by Springer-Verlag has permitted the presentation of an up-to-date survey of the principles of high-speed electronics. Incorpo ration in the Springer Series in Electronics and Photonics will enable the book to be distributed worldwide and to reach all interested scientists.
More details
Other editions
Additional editions
Bengt Källbäck | Heinz Beneking
High-Speed Electronics
Basic Physical Phenomena and Device Principles Proceedings of the International Conference, Stockholm, Sweden, August 7-9, 1986
Book
12/1986
Springer
€85.55
Article exhausted; check different version
Content
I Hot-Electron Dynamics.- Modelling of High Electron Velocity Effects for Devices.- Ballistic Transport and Electron Spectroscopy in Tunnelling Hot Electron Transfer Amplifiers (THETA).- Hot Electron Transistors.- Tunneling Through III-V Low-Barrier Heterostructures.- Velocity Overshoot and Suppression of Diffusivity and Microwave Noise in Short n+-n-n+ Structures of GaAs.- Mobility Overshoot of Hot Electrons.- Monte-Carlo Simulation of the Effects Induced by Real-Space Transfer in a HEMT.- Application of the Integral Boltzmann Equation to the Hot Electron Problem in an Inhomogeneous Submicron Structure.- Three Picosecond Oscillations in Avalanche Electron- Hole Plasma Induced by Energy Relaxation Phenomena.- II Heterostructures, Superlattices and Quantum Wells.- Resonant Tunneling Transistors, Tunneling Superlattice Devices and New Quantum Well Avalanche Photodiodes.- Novel Real-Space Transfer Devices.- Transport Characteristics in Heterostructure Devices.- Technical Issues of High-Speed Heterostructure Devices.- Hot-Carrier-Excited Two-Dimensional Plasmon in Selectively Doped AIGaAs/GaAs Heterointerface Under High Electric Field Application.- Optical High-Field-Transport Experiments in GaAs Quantum Wells.- Optical Time-of-Flight Investigation in Ambipolar Carrier Transport in Specially Designed GaAs/GaA1As Quantum Well Structures.- An Ultra-Fast Optical Modulator: The Double-Well GaAs/GaAlAs Superlattice (DWSL).- High-Velocity Vertical Transport in Graded Gap GaAs/GaA1As Superlattices.- Modelling of Mobility Degradation in Submicron MOSFETs After Electrical Stressing.- Negative Differential Mobility and Drift Velocity Overshoot in a Single Quantum Well of AIGaAs/GaAs/AIGaAs Heterostructure.- Monte Carlo Study of Hot Electron Transport in GaAs-AIGaAs Quantum Wells.-III High-Speed Electronic Devices.- High-Speed Bulk Unipolar Structures in Silicon.- Silicon Bulk Barrier Diodes Fabricated by LPVPE.- Impact Ionization Breakdown of GaAs Current Limiters.- The New High Speed Devices: The Barrier Transistor and the TEG-Base Transistor.- Monte Carlo Investigation of the High Electron Mobility Transistor.- Excess Gate Current Due to Hot Electrons in GaAs-Gate FETs.- Potential Barriers in Doped GaAs by OM-VPE.- Low Noise High Electron Mobility Transistors Grown By MOVPE.- Emitter-Coupled Logic Ring Oscillators Implemented with GaAs/GaAlAs Single and Double Heterojunction Bipolar Transistors: A Comparison.- Self-Aligned Technology Using Refractory Ohmic Contacts for GaAs/GaAlAs Heterojunction Bipolar Transistors.- Novel Cryoelectronic Device Concept Based on Magnetically Controlled Current Flow in Bulk Semiconductors.- InGaAlAs/InGaAs/InGaAlAs NnpnN Double Heterojunction Bipolar Transistors: Experimental Characteristics and Monte-Carlo Interpretation.- Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar Transistors.- Cryogenic GaAs Integrated Circuits Using a Lightly Doped GaAs FET Structure.- GaAs-on-Insulator Structure Prepared by Heteroepitaxy of Fluorides and GaAs.- IV High-Speed Opto-Electronics.- Optoelectronic Generation of Very High Speed Electromagnetic Transients.- Picosecond Electro-Optic Sampling.- High-Speed Integrated Circuit Testing by Time-Resolved Photoemission.- Overview of Optical Switching and Bistability.- Monte Carlo Investigation of High-Speed GaAs Schottky Barrier Photodiode.- A High-Speed Au/In0.53Ga0.47As/InP Schottky Barrier Photodiode for 1. 3-1. 65µm Photodetection.- High Sensitivity Picosecond Optical Pulse Detection by Semiconductor Laser Amplifiers Via Cross-Correlation.- GaAs Photoconductors toCharacterize Picosecond Response in GaAs Integrated Devices and Circuits.- Characterization of On-Chip Polycrystalline Silicon Photoconductors.- Index of Contributors.
