Basic Principles of Electronics

PrefaceChapter 1. Conduction in the Solid State 1.1. Historical 1.2. Vacancies in Crystals 1.3. Drude's Theory of Metallic Conduction 1.4. The Paradox 1.5. Mean Free TimeChapter 2. Conduction and Heat 2.1. Some Kinetic Theory 2.2. The Mean Free Path 2.3. The Joule Heating Effect 2.4. The Failure of Drude's Theory 2.5. The Work of Wien 2.6. The Modern Picture of Resistivity 2.7. The Effect of Temperature on the Conductivity (E1)Chapter 3. Semiconductors 3.1. Historical 3.2. Classification of Materials 3.3. Electrons and Holes 3.4. Extrinsic or Impurity SemiconductorsChapter 4. Semiconductor Technology and Simple Devices 4.1. Terminology 4.2. Crystal Preparation 4.3. The Materials in Use 4.4. Photoconductors (E1) 4.5. The Hall Effect; Magnetometers (E3) 4.6. Thermoelectric Semiconductors (E2) 4.7. Thermistors (E3) 4.8. Strain Gauges (E4)Chapter 5. The p-n Junction 5.1. Semiconductor Junctions 5.2. Diffusion in a Semiconductor 5.3. The Potential Barrier 5.4. The p-n Junction with Forward and Reverse Bias (E1) 5.5. The Resistance of a p-n JunctionChapter 6. p-n Junction Devices 6.1. Practical Junctions 6.1.1. The Alloy Junction 6.1.2. The Diffused Junction 6.1.3. Epitaxial Junctions 6.2. Rectifiers (E1) 6.3. Diodes 6.3.1. The Point-Contact Diode 6.3.2. The Gold-Bonded Diode 6.3.3. The Junction Diode 6.4. Comparison of p-n Junction Diodes with Thermionic Valve Diodes 6.5. The Varactor Diode 6.6. The Zener Diode (E3) 6.7. Photocells (E2)Chapter 7. The Transistor 7.1. The Principle of the Junction Transistor 7.2. The Current Gain, aChapter 8. Transistor Production and Characteristics 8.1. Transistor Production 8.1.1. The Germanium Alloy Transistor 8.1.2. The Silicon Alloy Transistor 8.1.3. The Germanium Alloy Power Transistor 8.1.4. The Germanium Diffused Mesa Transistor 8.1.5. The Silicon Diffused Mesa Transistor 8.1.6. The Silicon Epitaxial Planar Transistor 8.2. Transistor Characteristics 8.2.1. Common Base Characteristics (E1) 8.2.2. Common Emitter Characteristics (E2)Chapter 9. The Transistor as a Circuit Element 9.1. A Low-Frequency Equivalent Circuit for Common Base 9.2. Amplification in Common Base Connection (E1) 9.3. A Low-Frequency Equivalent Circuit for Common Emitter 9.4. The Common Emitter Amplifier (E2) 9.4.1. The Input Resistance, Rin 9.4.2. The Current Amplification, A1 9.4.3. The Voltage Amplification, Av 9.4.4. The Power Amplification, Ap 9.4.5. The Output Resistance, Rout 9.5. Determination of Parameters from Transistor Characteristics (E3) 9.6. The Load Line 9.7. Bias Circuits 9.7.1. Fixed Bias 9.7.2. Self Bias 9.7.3. Stabilized Bias 9.8. Design of a Bias Circuit 9.9. Alternative Transistor ConfigurationsChapter 10. Common Transistor Circuitry 10.1. Multi-Stage Amplifiers 10.2. Power Output Stages 10.2.1. Single-Ended Power Output Stages 10.2.2. Double-Ended Power Output Stages 10.2.3. Thermal Runaway; Precautions 10.3. Tuned Amplifiers 10.3.1. Single Tuned Amplifier Stage 10.3.2. Double Tuned Amplifier Stage 10.4. Oscillators 10.4.1. Sinusoidal Oscillators (E2) 10.4.2. Relaxation Oscillators 10.5. The Transistor Switch (E1) 10.5.1. Logic Circuits 10.6. D.C. Amplifiers 10.6.1. Directly-Coupled Circuits 10.6.2. Chopper Circuits 10.7. InvertersChapter 11. Special Devices, Processes and Uses 11.1. Heterojunctions 11.2. Sonar Amplifier 11.3. Radiation Detection 11.4. Power Control (E1) 11.4.1. The Thyristor (E2) 11.5. Microwave Devices 11.6. Opto-Electronics (E3) 11.6.1.