Silicon-Germanium Strained Layers and Heterostructures
Semi-Conductor and Semi-Metals Series
2nd Edition
Published on 1. October 2003
322 pages
978-0-08-054102-0 (ISBN)
Description
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject* Appropriate for students and senior researchers
More details
Series
Edition
2nd ed.
Language
English
Place of publication
San Diego
United States
Product notice
Windows
ISBN-13
978-0-08-054102-0 (9780080541020)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions
M. Willander | Suresh C. Jain
Silicon-Germanium Strained Layers and Heterostructures: Volume 74
Semi-conductor and semi-metals series
Book
10/2003
Academic Press
€198.08
Article exhausted; check different version
Content
Introduction; Strain, Stability, reliability and growth; mechanism of strain relaxation; strain, growth, and TED in SiGeC layers; Bandstructure and related properties; Heterostructure Bipolar Transistors; FETs and other devices.
