Localization and Metal-Insulator Transitions
Published on 6. December 2012
XIV, 533 pages
978-1-4613-2517-8 (ISBN)
Description
This volume and its two companion volumes, entitled Tetrahedrally-Bonded Amorphous Semiconductors and Physics of Disordered Materials, are our way of paying special tribute to Sir Nevill Mott and to express our heartfelt wishes to him on the occasion of his eightieth birthday. Sir Nevill has set the highest standards as a physicist, teacher, and scientific leader. Our feelings for him include not only the respect and admiration due a great scientist, but also a deep affection for a great human being, who possesses a rare combination of outstanding personal qualities. We thank him for enriching our lives, and we shall forever carry cherished memories of this noble man. Scientists best express their thanks by contributing their thoughts and observations to a Festschrift. This one honoring Sir Nevill fills three volumes, with literally hundreds of authors meeting a strict deadline. The fact that contributions poured in from all parts of the world attests to the international cohesion of our scientific community. It is a tribute to Sir Nevill's stand for peace and understanding, transcending national borders. The editors wish to express their gratitude to Ghazaleh Koefod for her diligence and expertise in deciphering and typing many of the papers, as well as helping in numerous other ways. The blame for the errors that remain belongs to the editors.
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Hellmut Fritzche
Localization and Metal-Insulator Transitions
Book
04/2013
Springer
€106.99
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Hellmut Fritzche
Localization and Metal-Insulator Transitions
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08/1985
Kluwer Academic/Plenum Publishers
€109.13
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Content
One: Metal-Insulator Transitions: Experimental.- The Disordered Insulator: Electron Glasses and Crystals.- Tuning the Metal-Insulator Transition in N-Type Silicon with a Magnetic Field.- Metal-Semiconductor Transitions in Doped IV-VI Semiconductors.- Metal-Insulator Transitions in Pure and Doped V02.- Composition-Controlled Metal-Insulator Transitions in Metal Oxides.- Pressure-Induced Insulator-Metal Transition.- The Metal-Insulator Transition and Superconductivity in Amorphous Molybdenum-Germanium Alloys.- On the Nature of the Metal-Insulator Transition in Metal-Rare-Gas Mixture Films.- Electrical Conductivity of Discontinuous Metal Films.- Metal-Nonmetal Transition and the Critical Point Phase Transition in Fluid Cesium.- The Semiconductor-to-Metal Transition in Liquid Se-Te Alloys.- Localization and the Metal-Nonmetal Transition in Liquids.- Diffusion and Conduction Near the Percolation Transition in a Fluctuating Medium.- Counter-Cation Roles in Ru(IV) Oxides with Perovskite or Pyrochlore Structures.- The Mott Mobility Edge and the Magnetic Polaron.- Two: Metal-Insulator Transitions: Theoretical.- Metal-Nonmetal Transitions and Thermodynamic Properties.- Metal-Insulator Transition and Landau Fermi Liquid Theory.- Long-Range Coulomb Interaction Versus Chemical Bonding Effects in the Theory of Metal-Insulator Transitions.- The Metal-Insulator Transition in Liquid Doped Crystalline and Amorphous Semiconductors: The Effect of Electron-Electron Interaction.- Exciton Condensation and the Mott Transition.- Metal-Insulator Transition in Doped Semiconductors.- Flux Quantization in Rings, Cylinders and Arrays.- Localization and Heavy Fermions.- Anderson Localization.- Effect of Phase Correlations on the Anderson Transition.- Electron-Lattice-Interaction Induced Localizationin Solids.- Density Correlations Near the Mobility Edge.- An Alternative Theory for Thermoelectric Power in Anderson-Mott Insulators.- Transport Properties Near the Percolation Threshold of Continuum Systems.- Three: Quasi-One-Dimensional and Quasi -Two-Dimensional Systems.- First-Order Phase Transition to the Metallic State in Doped Polyacetylene: Solitons at High Density.- The Germanium Grain Boundary: A Disordered Two-Dimensional Electronic System.- Structural Properties of Two-Dimensional Metal-Ammonia Liquids in Graphite.- Physical Properties of the Quasi-Two-Dimensional Compound La2NiO4.- One Electron Band Structure of a Collection of Resonant States.- Inelastic Scattering and Localization in Two Dimensions.- Existence of a Sharp Anderson Transition in Disordered Two-Dimensional Systems.- Fluctuation Kinetics and the Mott Hopping.- Aspects of 2D and 3D Conduction in Doped Semiconductors.- Localization Phenomena and AC Conductivity in Weakly Disordered Quasi-One-Dimensional and Layered Materials and in Anisotropic Low Dimensional Systems.- of Companion Volumes:.- Tetrahedrally-Bonded Amorphous Semiconductors, Edited by David Adler and Hellmut Fritzsche.- Physics of Disordered Materials Edited by David Adler, Hellmut Fritzsche, and Stanford R. Ovshinsky.- Author Index.
