Physics of Thin Films
Advances in Research and Development
Published on 22. October 2013
262 pages
978-1-4831-0330-3 (ISBN)
Description
Physics of Thin Films: Advances in Research and Development primarily deals with the influence of ions or optical energy on the deposition, properties, and etching on thin films. The book is a collection of five articles, with one article per chapter. Chapter 1 covers ionized cluster beam deposition; epitaxy; and film-formation mechanism. Chapter 2 discusses the activated reactive evaporation process; the deposition of refractory compounds; the role of plasma in the process; and its applications. Chapter 3 focuses on ion-beam processing of optical thin films; ion sources and ion-surface interactions; and the different kinds of bombardment involved. Chapter 4 deals with laser induced etching - its mechanisms, methods, and applications. Chapter 5 talks about contacts to GaAs devices; Fermi-level pinning; and heterojunction contacts. The book is recommended for physicists and engineers in the field of electronics who would like to know more about thin films and the progresses in the field.
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Other editions
Additional editions
Maurice H. Francombe | John L. Vossen
Physics of Thin Films: v. 13
Advances in Research and Development
Book
12/1987
Academic Press
€105.23
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Content
ContentsContributors to Volume 13 vPrefaceEditors' NoteIonized Cluster Beam Deposition and Epitaxy I. Introduction II. Equipment for Ionized Cluster Beam Deposition and Epitaxy III. Film-Formation Mechanism IV. Film Deposition and Epitaxial Growth V. Conclusions References The Activated Reactive Evaporation Process I. Introduction II. Processes for the Deposition of Refractory Compounds III. Direct Evaporation IV. Reactive Evaporation Processes V. Activated Reactive Evaporation and the Role of Plasma VI. Implementation of the Activated Reactive Evaporation Process VII. Compounds Synthesized by the ARE Process and the Effect of Process Variables VIII. Microstructure, Preferred Orientation, and Mechanical Properties of Refractory Compound Deposits IX. Applications of the ARE Process X. Summary References Ion-Beam Processing of Optical Thin Films I. Introduction II. Ion Sources III. Ion-Surface Interactions IV. Film Properties and Analysis Method V. Substrate Bombardment VI. Postdeposition Bombardment VII. Ion-Beam Deposition of Optical Films VIII. Conclusion References Laser-Induced Etching I. Introduction II. Mechanisms of Laser-Induced Etching III. Methods of Laser-Induced Etching IV. Applications of Laser-Induced Etching V. Concluding Remarks References Contacts to GaAs Devices I. Introduction II. "Ideal" Contacts III. The GaAs Surface and InterfaceFermi-Level Pinning IV. Alloyed Ohmic Contacts to GaAs V. Heterojunction Contacts VI. Recent Results VII. Summary References Author IndexSubject Index
