Surface Processing and Laser Assisted Chemistry

Name: Surface Processing and Laser Assisted Chemistry
Brand: Elsevier
Price: 51.95 EUR
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E. Fogarassy I. W. Boyd M. Stuke(Editor)

Elsevier (Publisher)

Published on 1. December 1990

494 pages

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978-0-444-59668-0 (ISBN)

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Front Cover
Surface Processing and Laser Assisted Chemistry
Copyright Page
Table of Contents
Preface
Conference organisation
Supporting organisations and sponsors
PART I: PRECURSORS FOR SURFACE PROCESSING
Chapter 1. New metallo-organic precursors for surface processing
1. Introduction
2. Metal films
3. Metal oxide films
4. Metal nitride films
5. Metal fluoride films
6. Compound semiconductors
7. Conclusions
References
Chapter 2. Design and synthesis of CVD precursors to thin film ceramic materials
1. Introduction
2. Experimental section
3. Results and discussion
Acknowledgments
References
Chapter 3. The photolytic laser chemical vapor deposition rate of platinum, its dependence on wavelength, precursor vapor pressure, light intensity, and laser beam diameter
1. Introduction
2. Experimental
3. Results and discussion
4. Conclusions
Acknowledgements
References
Chapter 4. Photoprocesses in organometallics
1. Introduction
2. Metal alkyls
References
Chapter 5. Preferential (111) orientation of ZnSe on (100) GaAs deposited by laser-induced MOCVD
1. Introduction
2. Experimental
3. Results
4. Discussion
5. Conclusions
References
Chapter 6. The adsorption of triethylgallium on GaAs(100) at 300 K: adsorption kinetics from optical second harmonic generation transients
1. Introduction
2. Theory
3. Results and discussion
4. Conclusions
Acknowledgements
References
Chapter 7. Photoreactions of adsorbed CH3Br on Pt(111)
1. Introduction
2. Experimental
4. Summary and conclusions
Acknowledgements
References
Chapter 8. Second harmonic generation of C02-laser radiation and FTIR spectroscopy for resonant desorption in the adsorbate CO-NaCl(100)
1. Introduction
2. SHG of C02 laser radiation for resonant desorption
3. Experimental
4. CO on NaCl(100) - a model adsorbate for studying laser energy transfer
5. Results and discussion
6. Summary and conclusions
Acknowledgements
References
PART II: DEPOSITION
SECTION II-l: SUPERCONDUCTORS
Chapter 9. High- Tc YBa2 Cu3 O7-8 prepared by chemical vapour deposition
1. Introduction
2. Experiments
3. Results
4. Conclusion
Acknowledgements
References
Chapter 10. Deposition, characterization, and laser ablation patterning of YBCO thin films
1. Introduction
2. Experimental set-up
3. Film preparation
4. Film characteristics
5. Laser ablation lithography
6. Summary
References
Chapter 11. Computer-controlled ion beam deposition systems for high Tc superconductor and other multi-component oxide thin films and layered structures
1. Introduction
2. Description of the SBMT deposition system
3. Results
4. Conclusion
Acknowledgement
References
Chapter 12. High quality YBa2Cu3Ox ultra-thin films and Y/Pr/Y multilayers made by a modified RF-magnetron sputtering technique
1. Introduction
2. Experimental
3. Results and discussions
4. Conclusions
References
Chapter 13. Characterization of the KrF laser-induced plasma plume created above an YBaCuO superconducting target and preparation of superconducting thin films
1. Introduction
2. Experimental set-up
3. Results and discussion
4. Conclusion
Acknowledgment
References
Chapter 14. Laser-ablation deposition of uniform thin films of Bi2Sr2CaCu20x
1. Introduction
2. Mathematical analysis
3. Experimental studies
4. Conclusion
Acknowledgements
References
Chapter 15. An investigation of laser ablation and deposition of Y-Ba-Cu-O in an oxygen environment
1. Introduction
2. Experimental
3. Results
4. Plume dynamics - analysis
5. Plume range
6. Deposition experiments
7. Conclusions
Acknowledgements
References
SECTION I-2: METALS
Chapter 16. Simulation of laser CVD
1. Introduction
2. Basic equations
3. Calculations, comparison with analytical expressions
Acknowledgement
References
Chapter 17. Gas-phase transport and kinetics in pulsed-laser CVD
1. Introduction
2. Model
3. Discussion
Acknowledgements
References
Chapter 18. High performance contact formation in LSI circuit restructuring using visible pulse laser induced ablation and CVD
1. Introduction
2. Experiment
3. Results
4. Summary
References
Chapter 19. Laser-assisted deposition for electronic packaging applications
1. Introduction
2. Factors influencing the LAD process
3. Effect of laser parameters
4. Prenucleation with palladium
5. Concentration of the precursor
6. Influence of the substrate material
7. Surface pretreatment
8. Applications
References
Chapter 20. Multichip packaging for very-high-speed digital systems
Acknowledgment
References
Chapter 21. Optimization of the laser-induced deposition technique for its application in X-ray mask repair
1. Introduction
2. Experimental
3. Deposition processes
4. Experimental results
5. Repair results
6. Comparison with electron- and ion-induced deposition
7. Conclusion
Acknowledgements
References
Chapter 22. HF formation in laser-induced CVD of tungsten
1. Introduction
2. Experimental
3. Results
4. Discussion
5. Conclusions
Acknowledgements
References
Chapter 23. Laser direct writing of copper on various thin-film substrate materials
1. Introduction
2. Experimental
3. Results
4. Conclusion
References
Chapter 24. Direct writing of conducting traces by chemical modification of sohd coatings with laser radiation
1. Introduction
2. Experimental set-up
3. Results
4. Conclusions
References
Chapter 25. VUV synchrotron radiation processing of thin palladium acetate spin-on films for metallic surface patterning
1. Introduction
2. Experiment
3. Spectrometric study of chemical changes
4. Discussion
5. Conclusion
Acknowledgments
References
Chapter 26. Investigation of the mechanism of the UV-induced palladium deposition process from thin solid palladium acetate films
1. Introduction
2. Experimental
3. Results and discussion
4. Conclusions
References
Chapter 27. Laser evaporation of metal sandwich layers for improved IC metallization
1. Introduction
2. Experimental set-up
3. Experimental results
4. Conclusion
Acknowledgements
References
SECTION II-3: INSULATORS AND REFRACTORY MATERIALS
Chapter 28. Filling of Si oxide into a deep trench using digital CVD method
1. Introduction
2. TMS/02 and TES /02 reaction systems
3. TES/H2 - O2 reaction system
4. Conclusion
Acknowledgement
References
Chapter 29. Photo-assisted deposition of thin films on III-V semiconductors with UV and IR lamps
1. Introduction
2. Build-up of semiconductor/insulator interfaces in CVD and UVCVD
3. High-sensitivity infrared spectroscopy for the study of the InP/Si02 interface
4. Silicon nitride deposition by "flash" CVD
5. Deposition of semiconductors and metals
6. Conclusions
Acknowledgments
References
Chapter 30. Si02 deposition by direct photolysis at 185 nm of N2O and SiH4
1. Introduction
2. Experimental
3. Results
4. Modelling of the deposition mechanism
Appendix A
References
Chapter 31. Deposition of Si02 by reactive excimer laser ablation from a SiO target
1. Introduction
2. Experimental
3. Results and discussion
4. Conclusion
References
Chapter 32. Sol-gel low-temperature preparation of silica films: RBS, TEM and MOS C- V characterization
1. Introduction
2. Experimental procedure
3. High-resolution transmission electron microscopy
4. RBS analysis
5. MOS C-V analysis
Acknowledgements
References
Chapter 33. Gas mixture dependence of the LCVD of Si02 films using an ArF laser
1. Introduction
2. Experimental
3. Results
4. Conclusions
Acknowledgements
References
Chapter 34. Excimer laser deposition of silica films: a comparison between two methods
1. Introduction
2. Experimental
3. Results
4. Sample properties
5. Conclusions
Acknowledgements
References
Chapter 35. Photochemical vapor deposition of titaniumdiboride
1. Introduction
2. Experimental
3. Results and discussion
4. Conclusion
Acknowledgment
References
Chapter 36. In situ formation of ionic carbide clusters by laser ablation
1. Introduction
2. Experimental
3. Results and discussion
References
Chapter 37. Synthesis of ultrafine Ti02 powders by a CW C02 laser
1. Introduction
2. Experimental
3. Results and discussion
4. Conclusions
References
SECTION II-4: SEMICONDUCTORS
Chapter 38. On the role of the substrate position in the C02 laser CVD of amorphous hydrogenated silicon
1. Introduction
2. Experimental part
3. Results and discussion
Acknowledgements
References
Chapter 39. Laser CVD of a-Si:H from SiH4 and Si2H6: relations between chemistry, growth rate and film properties
1. Introduction
2. Experimental
3. Results
4. Discussion
Acknowledgements
References
Chapter 40. Picosecond YAG laser photoablation of amorphous silicon
1. Introduction
2. Experimental details
3. Results and discussion
4. Summary
References
Chapter 41. The influence of deposition parameters on the growth of a-SiGe:H alloys in a plasma CVD system
1. Introduction
2. Experimental
3. Results
4. Discussion and conclusions
References
Chapter 42. Good-quality Ge films grown by excimer laser deposition
1. Introduction
2. Experimental
3. Results and discussion
4. Conclusions
Acknowledgments
References
PART III: DESORPTION, ABLATION, ETCHING AND PATTERNING
Chapter 43. Industrial laser applications
1. Introduction
2. Preconditions for the use of novel production processes: reflections from the developer's standpoint
3. Some examples of laser application in production lines
4. The first application of KrF excimer lasers in a production line for high-density-multilayer printed circuit boards
5. Use of excimer lasers in production
6. Conclusion
References
Chapter 44. Surface modifications of Kapton and cured polyimide films by ArF excimer laser: applications to imagewise wetting and metallization
1. Introduction
2. Experimental
3. Results
4. Discussion
References
Chapter 45. Excimer laser ablation of polyimide
1. Introduction
2. Experimental
3. Results and discussions
4. Conclusions
Acknowledgements
References
Chapter 46. Photochemically assisted laser ablation of doped polymethyl-methacrylate
1. Introduction
2. Experimental
3. Results
4. Discussion
References
Chapter 47. Picosecond time-resolved laser desorption
1. Introduction
2. Experimental
3. Results
4. Discussion
5. Summary
Acknowledgement
References
Chapter 48. Mechanisms of photon-stimulated desorption and chemisorption of atomic particles on the surfaces of semiconductors and metals
1. Introduction
2. Cross-section of single-photon bound-free transition
3. Electrical field effect on the cross-section
References
Chapter 49. Surface temperature measurements using pyrometry during excimer laser pulsed etching of silicon in a Cl2 environment
1. Introduction
2. Experimental
3. Results
4. Calculations
5. Discussion
6. Conclusions
References
Chapter 50. Reactive ion beam etching of Si/Si02 systems using SF6/02 chemistry
1. Introduction
2. Experimental set-up
3. Results and discussion
4. Conclusion
Acknowledgments
References
Chapter 51. On the two- and three-dimensional simulation of ion-milled structures
1. Introduction
2. Structure profile /topography algorithm
4. Application of algorithm
5. Conclusions
Ackowledgement
References
Chapter 52. Spectroscopic study of the plasma created by interaction between a TEA C02 laser beam and a Ti target in a cell containing helium gas
1. Introduction
2. Experimental set-up
3. Diagnostics
4. Results
5. Modelling
6. Conclusion
Acknowledgement
References
Chapter 53. Luminescence and ESCA analysis of laser-ablated materials
1. Introduction
2. Experimental
3. Results and discussion
Acknowledgements
References
PART IV. PHOTON AND ION SURFACE MODIFICATIONS
Chapter 54. Controlled structuring of polymer surfaces by UV-laser irradiation
1. Introduction
2. Experimental
3. Emperical observations
4. The model
References
Chapter 55. Ion-beam-assisted formation of interconnections into high temperature polymers
1. Introduction
2. Ion-beam-induced conductivity in polymers
3. Field of application
4. Role of the ion beam parameters
5. Conclusions
References
Chapter 56. Laser-induced photochemical adherence enhancement
1. Introduction
2. Experimental
3. Results and discussion
4. Conclusion
Acknowledgement
References
Chapter 57. Application of doping and dedoping of Teflon AF films in microfabrication using KrF and ArF excimer lasers
1. Introduction
2. Experimental
3. Results and discussion
Acknowledgment
References
Chapter 58. Ultra-flat p-n junctions formed by solid source laser doping
1. Introduction
2. Experimental procedure
3. Theoretical background
4. Experimental results
5. Conclusion
Acknowledgements
References
Chapter 59. Low temperature VUV enhanced growth of thin silicon dioxide films
1. Introduction
2. Experimental system and procedures
3. Results and discussion
4. Influence of VUV photons on the electrical properties
5. Conclusions
Acknowledgements
References
Chapter 60. Chemical reactions at solid-solid interfaces induced by pulsed laser annealing
1. Introduction
2. Experimental details
3. Experimental results
4. Discussion
5. Conclusions
Acknowledgements
References
Chapter 61. Nitridation of titanium by multipulse excimer laser irradiation
1. Introduction
2. Experimental apparatus
3. Experimental results
4. Discussion
5. Conclusions
Acknowledgements
References
Chapter 62. Annealing kinetics during rapid thermal processing of excimer laser-induced defects in virgin silicon
1. Introduction
2. Experiments
3. Results and discussion
4. Conclusion
References
Chapter 63. Influence of the substrate on the temperature induced by pulsed laser irradiation of thin films
1. Introduction
2. Numerical simulation
3. Results and discussion
4. Conclusions
References
Chapter 64. Pulsed excimer and Nd:YAG laser crystallization of a-Si:H The specific role of hydrogen
1. Introduction
2. Experimental
3. Results and discussions
4. Conclusion
References
Chapter 65. The influence of the substrate on the transformations induced in Si by nanosecond laser irradiation: a time-resolved study
1. Introduction
2. Experimental procedure
3. Results
4. Discussion
5. Conclusions
Acknowledgements
References
Chapter 66. Investigation of laser recrystallization of thin Si films using numerical simulation
1. Introduction
2. Modelling
3. Beam shaping
4. Integrated absorber
5. Micro-absorber
Acknowledgements
References
Chapter 67. Time-resolved TEM of laser-induced structural changes in GeTe films
1. Introduction
2. Experimental procedure
3. Experimental results
4. Discussion/conclusion
Acknowledgement
References
Chapter 68. Thermal evolution of W/Si and W/C multilayers under pulsed laser heating and classical annealing
1. Introduction
2. Experimental conditions
3. Results
4. Discussion
Acknowledgments
References
Chapter 69. Diffusion and microstructures induced by excimer laser irradiation in Ge-Sb thin film bilayers
1. Introduction
2. Experimental method
3. Results
4. Discussion
Acknowledgements
References
Chapter 70. Morphological improvement of zinc electrodeposits by laser assistance
1. Introduction
2. Materials and experimental procedure
3. Electrochemical and metallurgical aspects of the classical electrodeposition of zinc
4. Influence of laser assistance on the electrochemical aspect
5. Influence of laser assistance on the metallurgical aspect
6. Conclusion
Acknowledgements
References
Chapter 71. CW laser-induced transformation of thin Sb, Se and Sb2Se3 films in air
1. Introduction
2. Experimental
3. Results
4. Discussion
5. Conclusions
Acknowledgements
References
Chapter 72. Instability and structural transformation of amorphous ultra-thin W-Si multilayer structures during heavy ion irradiation
1. Experiments
2. Results and discussion
3. Conclusions
Acknowledgments
References
Chapter 73. Crystallization of Fe-Zr metallic glasses during ion irradiation
1. Introduction
2. Experimental details
3. Results and discussion
References
Chapter 74. Glass surface treatment with excimer and C02 lasers
1. Introduction
2. Experimental set-up
3. Interaction of laser beams with glasses
4. Surface treatment with C02 laser
5. Excimer laser ablation of glasses
5. Conclusion
References
PART V: ADVANCED TECHNIQUES OF CHARACTERISATION
Chapter 75. Hydrogen plasma treatment of silicon surfaces studied by in-situ spectroscopic ellipsometry
1. Introduction
2. Experimental
3. Results and discussion
References
Chapter 76. Scanning tunneling microscopy and technical applications
1. Introduction
2. Applications in magnetic storage device manufacturing
3. Instrumental
4. STM applications on substrates of magnetic recording disks
5. Advanced techniques
6. Conclusion
References
Chapter 77. Femtosecond transient reflectivity measurements as a probe for process-induced defects in silicon
1. Introduction
2. Experimental
3. Physics, measurements and applications
4. Conclusion
Acknowledgements
References
Chapter 78. In situ silicon solid state regrowth kinetics measurement in a rapid thermal processor
1. Introduction
2. Experimental methods
3. Results and discussion
4. Conclusion
References
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Surface Processing and Laser Assisted Chemistry

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