Charge-Based MOS Transistor Modeling
The EKV Model for Low-Power and RF IC Design
Published on 14. August 2006
328 pages
978-0-470-85545-4 (ISBN)
Description
Modern, large-scale analog integrated circuits (ICs) areessentially composed of metal-oxide semiconductor (MOS) transistorsand their interconnections. As technology scales down to deepsub-micron dimensions and supply voltage decreases to reduce powerconsumption, these complex analog circuits are even more dependenton the exact behavior of each transistor. High-performance analogcircuit design requires a very detailed model of the transistor,describing accurately its static and dynamic behaviors, its noiseand matching limitations and its temperature variations. Thecharge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model forIC design has been developed to provide a clear understanding ofthe device properties, without the use of complicated equations.All the static, dynamic, noise, non-quasi-static models arecompletely described in terms of the inversion charge at the sourceand at the drain taking advantage of the symmetry of the device.Thanks to its hierarchical structure, the model offers severalcoherent description levels, from basic hand calculation equationsto complete computer simulation model. It is also compact, with aminimum number of process-dependant device parameters.
Written by its developers, this book provides a comprehensivetreatment of the EKV charge-based model of the MOS transistor forthe design and simulation of low-power analog and RF ICs. Clearlysplit into three parts, the authors systematically examine:
* the basic long-channel intrinsic charge-based model, includingall the fundamental aspects of the EKV MOST model such as the basiclarge-signal static model, the noise model, and a discussion oftemperature effects and matching properties;
* the extended charge-based model, presenting importantinformation for understanding the operation of deep-submicrondevices;
* the high-frequency model, setting out a complete MOS transistormodel required for designing RF CMOS integrated circuits.
Practising engineers and circuit designers in the semiconductordevice and electronics systems industry will find this book avaluable guide to the modelling of MOS transistors for integratedcircuits. It is also a useful reference for advanced students inelectrical and computer engineering.
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Software
11/2007
Wiley
€89.49
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Christian C. Enz | Eric A. Vittoz
Charge-Based MOS Transistor Modeling
The EKV Model for Low-Power and RF IC Design
Book
07/2006
Wiley
€138.50
Shipment within 10-20 days
Persons
Christian C. Enz and Eric A. Vittoz are the authors of Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design, published by Wiley.
Content
Foreword.
Preface.
List of Symbols.
1. Introduction.
1.1 The Importance of Device Modeling for IC Design.
1.2 A Short History of the EKV MOST Model.
1.3 The Book Structure.
PART I: THE BASIC LONG-CHANNELINTRINSIC CHARGE-BASED MODEL.
2. Introduction.
2.1 The N-channel Transistor Structure.
2.2 Definition of charges, current, potential and electricfields.
2.3 Transistor symbol and P-channel transistor.
3. The Basic Charge Model.
3.1 Poisson's Equation and Gradual ChannelApproximation.
3.2 Surface potential as a Function of Gate Voltage.
3.3 Gate Capacitance.
3.4 Charge Sheet Approximation.
3.5 Density of Mobile Inverted Charge.
3.6 Charge-Potential Linearization.
4. Static Drain Current.
4.1 Drain Current Expression.
4.2 Forward and Reverse Current Components.
4.3 Modes of Operation.
4.4 Model of Drain Current Based on Charge Linearization.
4.5 Fundamental Property: Validity and Application.
4.6 Channel Length Modulation.
5. The Small-Signal Model.
5.1 The Static Small-Signal Model.
5.2 A General Non-Quasi-Static Small-Signal Model.
5.3 The Quasi-Static Dynamic Small-Signal Model.
6. The Noise Model.
6.1 Noise Calculation Methods.
6.2 Low-Frequency Channel Thermal Noise.
6.3 Flicker Noise.
6.4 Appendices.
Appendix : The Nyquist and Bode Theorems.
Appendix : General Noise Expression.
7. Temperature Effects and Matching.
7.1 Introduction.
7.2 Temperature Effects.
PART II: THE EXTENDED CHARGE-BASED MODEL.
8. Non-Ideal Effects Related to the Vertical Dimension.
8.1 Introduction.
8.2 Mobility Reduction Due to the Vertical Field.
8.3 Non-Uniform Vertical Doping.
8.4 Polysilicon Depletion.
8.4.1 Definition of the Effect.
8.5 Band Gap Widening.
8.6 Gate Leakage Current.
9. Short-Channel Effects.
9.1 Velocity Saturation.
9.2 Channel Length Modulation.
9.3 Drain Induced Barrier Lowering.
9.4 Short-Channel Thermal Noise Model.
10. The Extrinsic Model.
10.1 Extrinsic Part of the Device.
10.2 Access Resistances.
10.3 Overlap Regions.
10.4 Source and Drain Junctions.
10.5 Extrinsic Noise Sources.
PART III: THE HIGH-FREQUENCY MODEL.
11. Equivalent Circuit at RF.
11.1 RF MOS Transistor Structure and Layout.
11.2 What Changes at RF?.
11.3 Transistor Figures of Merit.
11.4 Equivalent Circuit at RF.
12. The Small-Signal Model at RF.
12.1 The Equivalent Small-Signal Circuit at RF.
12.2 Y-Parameters Analysis.
12.3 The Large-Signal Model at RF.
13. The Noise Model at RF.
13.1 The HF Noise Parameters.
13.2 The High-Frequency Thermal Noise Model.
13.3 HF Noise Parameters of a Common-Source Amplifier.
References.
Index.
