VLSI Metallization
Published on 1. December 2014
490 pages
978-1-4832-1781-9 (ISBN)
Description
VLSI Electronics Microstructure Science, Volume 15: VLSI Metallization discusses the various issues and problems related to VLSI metallization. It details the available solutions and presents emerging trends. This volume is comprised of 10 chapters. The two introductory chapters, Chapter 1 and 2 serve as general references for the electrical and metallurgical properties of thin conducting films. Subsequent chapters review the various aspects of VLSI metallization. The order of presentation has been chosen to follow the common processing sequence. In Chapter 3, some relevant metal deposition techniques are discussed. Chapter 4 presents the methods of VLSI lithography and etching. Conducting films are first deposited at the gate definition step; therefore, the issues related to gate metallization are discussed next in Chapter 5.In Chapter 6, contact metallization is elaborated, and Chapter 7 is devoted to multilevel metallization schemes. Long-time reliability is the subject of Chapter 8, which discusses the issues of contact and interconnect electromigration. GaAs metallization is tackled in Chapter 9. The volume concludes with a general discussion of the functions of interconnect systems in VLSI. Materials scientists, processing and design engineers, and device physicists will find the book very useful.
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Norman G. Einspruch
Einspruch Vlsi Electronics V15
Book
01/1987
Academic Press
€72.85
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Content
¿PrefaceChapter 1 Electrical Properties of Thin Conducting Films I. Introduction II. The Physics of Transport Phenomena in Thin Films III. Electromigration in Thin Metal Lines IV. The Interconnect Impedance V. Test Structures ReferencesChapter 2 Metallurgical Properties of Thin Conducting Films I. Introduction II. Theoretical Background on Thin-Film Properties III. Metallurgical Properties of Thin Films IV. Summary and Future Trends ReferencesChapter 3 Metallization Techniques I. General Considerations II. Deposition Techniques ReferencesChapter 4 Methods of Metal Patterning and Etching I. Introduction II. Lithography III. Metal Etching IV. Summary ReferencesChapter 5 Gate Metallization I. Introduction II. Choice of Gate Materials III. Metal Gate Electrodes IV. Polysilicon and Silicide Gate Electrodes V. Transparent Conducting Electrodes VI. Concluding Remarks ReferencesChapter 6 Contact Metallization I. Introduction II. Specific Contact Resistance III. The Impact of Series Resistance on the Device Performance IV. Scaling of Contact Resistance V. Shallow Junctions VI. Contact Fabrication Procedures VII. Ohmic Contacts to Silicon Appendix ReferencesChapter 7 Multilevel Metallization Schemes I. Introduction II. Need for Multilevel Metallization III. Historical Perspective IV. Multilevel Metallization Issues V. Materials Used for Multilevel Metallization Schemes VI. Conductor Systems VII. Dielectric Systems VIII. Planarization and Via Technologies IX. Yield, Reliability, and Other Issues X. Concluding Remarks ReferencesChapter 8 Electromigration in Interconnects and Contacts I. Introduction II. Background III. Measurement Techniques IV. The Design of Reliable Devices V. Future Perspectives ReferencesChapter 9 Metallization Technology for GaAs Integrated Circuits I. Introduction II. GaAs Integrated Circuit Metallization Design Considerations III. GaAs Contact and Interconnect Systems IV. Metallization Fabrication Technology for GaAs V. Yield and Reliability VI. Future Trends ReferencesChapter 10 Interconnections, Dissipation, and Computation I. Introduction II. Interconnections in VLSI III. Off-Chip Interconnections IV. Dissipation and Computation V. Conclusions ReferencesIndex
