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VLSI Electronics: Microstructure Science, Volume 5 considers trends for the future of very large scale integration (VLSI) electronics and the scientific base that supports its development. This book discusses the automation for VLSI manufacture, silicon material properties for VLSI circuitry, and high-performance computer packaging and thin-film multichip module. The nanometer-scale fabrication techniques, high-density CCD memories, and solid-state infrared imaging are also elaborated. This text likewise covers the impact of microelectronics upon radar systems and quantum-mechanical limitations on device performance. This volume is a good source for scientists and engineers who wish to become familiar with VLSI electronics, device designers concerned with the fundamental character of and limitations to device performance, systems architects who will be charged with tying VLSI circuits together, and engineers conducting work on the utilization of VLSI circuits in specific areas of application.
Language
Place of publication
Publishing group
Elsevier Science & Techn.
ISBN-13
978-1-4832-1772-7 (9781483217727)
Schweitzer Classification
List of ContributorsPrefaceChapter 1 Automation for VLSI Manufacture I. Introduction II. VLSI Manufacturing Technology III. Automation for VLSI Manufacture IV. Summary ReferencesChapter 2 Silicon Material Properties for VLSI Circuitry I. Introduction II. Fabrication of Silicon Material and VLSI Circuits: A Summary III. Silicon Material Phenomena Important for VLSI Circuitry IV. Electrical Effects of Point Defects and Crystal Strain on VLSI Circuitry V. Historical Perspective on the Evolution of Silicon Material Technology VI. Conclusion; Recommendations ReferencesChapter 3 High-Performance Computer Packaging and the Thin-Film Multichip Module I. Introduction-The Trend for High-Performance Computer Packaging II. The Multilayer Ceramic Module for LSI Chips III. Challenges for Designing Future High-Performance Multichip Modules IV. Thin-Film Interconnection Lines V. The Delta-I Problem and On-Module Capacitor VI. Thin-Film Line Fabrication and the Defect Problem VII. Conclusion-The Thin-Film Module as a High-Performance Package ReferencesChapter 4 Nanometer-Scale Fabrication Techniques I. Introduction II. Resist Processes and Resolution Limits III. Exposure and Patterning Techniques IV. Three-Dimensional Techniques V. Conclusions ReferencesChapter 5 High-Density CCD Memories I. Introduction II. Early Use of Electron-Beam Technology to Fabricate CCDs III. MOS RAM versus CCD IV. Technology Components V. CCD Memory Structure VI. Two-Phase Cell VII. Channel Stop VIII. Barriers IX. Maximum Charge Capacity X. Processing Error Budgets XI. Other Processing Effects XII. CCD Array Structures XIII. Examples of Device Operation XIV. Process Problems XV. Technology Status and Forecast Appendix. Optimum Cell Layout ReferencesChapter 6 Solid-State Infrared Imaging I. Introduction II. Infrared Imaging Principles III. Staring and Scanning FPAs IV. Infrared Detectors and Readout Structures V. Area and Line Arrays VI. Array Technologies VII. Array Characterization VIII. Infrared-Imaging-System Performance IX. Concluding Remarks ReferencesChapter 7 Impact of Microelectronics upon Radar Systems I. Overview II. System Requirements Drive Technology III. Subsystems and Technology Requirements IV. Key Microelectronic Technologies V. Summary Selected ReferencesChapter 8 Materials Science, Chemistry, and Physics at Small Dimensions I. Materials Science II. Chemistry III. Physics ReferencesChapter 9 Quantum-Mechanical Limitations on Device Performance I. Fundamental Limits on Logic Devices II. Technology-Independent Quantum Limits ReferencesIndexContents of Other Volumes