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VLSI Electronics: Microstructure Science, Volume 3 evaluates trends for the future of very large scale integration (VLSI) electronics and the scientific base that supports its development. This book discusses the impact of VLSI on computer architectures; VLSI design and design aid requirements; and design, fabrication, and performance of CCD imagers. The approaches, potential, and progress of ultra-high-speed GaAs VLSI; computer modeling of MOSFETs; and numerical physics of micron-length and submicron-length semiconductor devices are also elaborated. This text likewise covers the optical linewidth measurements on photomasks and wafers and effects of materials technology and fabrication tolerances on guided-wave optical communication and signal processing. This volume is recommended for scientists and engineers who wish to become familiar with VLSI electronics, device designers concerned with the fundamental character of and limitations to device performance, systems architects who will be charged with tying VLSI circuits together, and engineers conducting work on the utilization of VLSI circuits in specific areas of application.
Language
Place of publication
Publishing group
Elsevier Science & Techn.
ISBN-13
978-1-4832-1770-3 (9781483217703)
Schweitzer Classification
List of ContributorsPrefaceChapter 1 Impact of VLSI on Computer Architectures I. Introduction II. Single-Chip Computers III. Special-Purpose VLSI Chips IV. Conclusion ReferencesChapter 2 VLSI Design and Design Aid Requirements I. Introduction II. State-of-the-Art versus Workhorse Technologies III. Designer Goals in Workhorse Technologies IV. Next-Generation Requirements V. The Problem and the Approach VI. The Future References Additional ReferencesChapter 3 Design, Fabrication, and Performance of CCD Imagers I. Introduction II. Silicon CCD Imagers with Intrinsic Photoresponse III. PtSi-Silicon Schottky-Barrier Infrared Image Sensors IV. Other Infrared Imagers V. Prospects for the Future ReferencesChapter 4 Ultra-High-Speed GaAs VLSI: Approaches, Potential, and Progress I. Introduction II. GaAs Device Approaches for Ultra-High-Speed VLSI III. Yield Analysis and Implications for VLSI Design IV. The Schottky Diode-FET Logic Circuit Approach for Ultra-High-Speed GaAs VLSI V. Planar GaAs LSI/VLSI Fabrication Technology VI. Experimental Performance Results for Planar SDFL LSI GaAs ICs VII. Summary ReferencesChapter 5 Computer Modeling of MOSFETs I. Introduction II. MOSFET Device Modeling III. Results and Discussion IV. Conclusions ReferencesChapter 6 The Numerical Physics of Micron-Length and Submicron-Length Semiconductor Devices I. Introduction II. The Semiconductor Equations III. The Boltzmann Transport Equation IV. Quantum Transport Theory V. Diffusion Appendix A. Derivation of the Balance Equations Appendix B. The Wigner Distribution Function ReferencesChapter 7 Optical Linewidth Measurements on Photomasks and Wafers I. Introduction II. Limitations of Traditional Methods III. Modeling of the Optical Image IV. Primary Linewidth-Measurement System V. Primary Linewidth Measurements on Photomasks VI. Linewidth Measurements with Conventional Optical Systems on Photomasks VII. Linewidth Measurements on Other Materials ReferencesChapter 8 The Effects of Materials Technology and Fabrication Tolerances on Guided-Wave Optical Communication and Signal Processing I. Introduction II. Optical Guided-Wave Components in Communications and Signal-Processing Systems III. The Effect of Fabrication Techniques on the Performance of Optical Guided-Wave Components IV. Conclusion ReferencesChapter 9 The Impact of VLSI on CAM I. Introduction II. CAM's Structure III. VLSIs Impact on CAM IV. Education and Training ReferencesIndexContents of Other Volumes