Surface and Interface Effects in VLSI

¿List of ContributorsPrefacePart A Introduction Chapter 1 Interfaces and Devices I. Introduction II. Electrical Properties of Interfaces III. Structure of Interfaces IV. Reproducibility and Stability V. Summary and Prognosis ReferencesPart B Structure Chapter 2 Characterization of the Si - SiO2 Interface I. Introduction II. Historical Background III. Oxidation and Diffusion IV. Interface Morphology V. Interface Traps VI. Theoretical Models VII. Conclusions References Chapter 3 Fundamental Studies of Interfaces: The Unified Defect Model and Its Application to GaAs Integrated Circuits I. Introduction II. New Experimental Techniques to Study Surfaces and Interfaces on an Atomic Scale: Synchrotron Radiation III. Strategy Used in This Work IV. The Unified Defect Model for III-V Interfaces and Its Origin V. III-V Ternary and Quaternary Alloys VI. Scientifically Engineered Schottky Barrier Heights VII. Ohmic Contacts VIII. Chemistry and Intermixing at III-V Semiconductor-Metal Interfaces IX. Other Applications to VLSI Devices X. Summary and Conclusions ReferencesPart C Electronic Properties Chapter 4 Heterostructure Device Physics: Band Discontinuities as Device Design Parameters I. Introduction: Why Heterostructures? II. Band Offsets III. Band Bending and Space Charge Layers at Abrupt Heterojunctions IV. The High Electron Mobility Transistor (HEMT): A Device Example References Chapter 5 Interface Constraints on MESFET and MISFET Architectures I. Introduction II. Models for FET III. Surfaces and Interfaces IV. Metal-Semiconductor Interfaces V. Chemical Reactions Between Metals and III-V Compounds VI. The GaAs Schottky Barrier VII. Channel-Substrate Interface VIII. Ohmic Contacts IX. Dielectric III-V Compound Semiconductor Interfaces X. Surface and Interfacial Properties of Ternary and Quaternary III-V Alloys XI. Instabilities in MISFET XII. Afterthoughts References Chapter 6 The Role of Boundary Conditions to Near-and Submicrometer-Length Gallium Arsenide Structures I. Introduction II. Transport through Moment of the Boltzmann Transport Equation III. Solution of the Governing Equations IV. Conclusions References Appendix. Dimensionless Equations Used in the Numerical Simulations Chapter 7 Carrier Transport at the Si - SiO2 Interface List of Symbols I. Introduction II. Scaling III. Carrier Velocity Measurements IV. A Model for Electron Velocity in Silicon V. Charge Packet Transport and Broadening ReferencesIndexContents of Other Volumes