Materials and Process Characterization
Published on 1. December 2014
614 pages
978-1-4832-1773-4 (ISBN)
Description
VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials characterization tools to materials and processes used for development and production of very large scale integration (VLSI) electronics. This book discusses the various characterization techniques, such as Auger spectroscopy, secondary ion mass spectroscopy, X-ray topography, transmission electron microscopy, and spreading resistance. The systematic approach to the technologies of VLSI electronic materials and device manufacture are also considered. This volume is beneficial to materials scientists, chemists, and engineers who are commissioned with the responsibility of developing and implementing the production of materials and devices to support the VLSI era.
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Norman G. Einspruch | Graydon B. Larrabee
Very Large Scale Integration Electronics: Materials and Process Characterization v. 6
Book
07/1983
Academic Press
€132.68
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Content
List of ContributorsPrefaceChapter 1 Characterization of Silicon Materials for VLSI I. Introduction II. Characterization Techniques III. Polycrystalline Silicon IV. Single-Crystal Silicon V. Slice Preparation VI. Summary Appendix. Properties of 54 Elements in Single-Crystal Silicon ReferencesChapter 2 Characterization of Silicon Epitaxial Films I. Introduction II. Epitaxial-Growth Process III. Electrical Characterization IV. Physical and Optical Characterization V. Epitaxial-Defect Characterization VI. Epitaxial-Defect Measurements VII. Summary ReferencesChapter 3 Characterization of Dielectric Films I. Introduction and Background II. Basic Structure and Properties of Gate Dielectrics III. The Classification of Dielectric Charges IV. The Spatial Location of Oxide Charge V. The Amount and Energy Location of Interface Traps VI. Temperature Effects on Mobile Ionic Charge VII. Injected Charge Trapping in Oxide Films VIII. The Role of Dielectric Layer Characterization in VLSI ReferencesChapter 4 The Status of Dry-Developed Resists for Each Lithographic Technology I. Introduction II. The Total Dry Process III. Ablative Resists IV. Photoresist Analogs V. X-Ray Resist Analogs VI. Electron Resist Analogs VII. Ion-Beam Resist Analogs VIII. Conclusions ReferencesChapter 5 Microlithography in Semiconductor Device Processing I. Introduction II. Pattern Generation III. Photomask Fabrication IV. Wafer Resist Patterning V. Summary and Conclusions ReferencesChapter 6 Formation and Characterization of Transition-Metal Silicides I. Introduction II. Formation and Characterization III. Silicide Transformations IV. Properties of Silicides Appendix. Silicide Tables ReferencesChapter 7 Materials Characterization for Ion Implantation I. Introduction II. Techniques III. Applications IV. Summary ReferencesChapter 8 Surface Characterization for VLSI I. Introduction II. Techniques of Surface Analysis III. Applications to Process Flow IV. Future Trends and Needs ReferencesChapter 9 Microelectronic Test Chips for VLSI Electronics I. Historical Perspective II. Introduction III. Types of Test Structures IV. Test-Chip Organization and Test-Structure Design V. Test-Chip Testers and Advanced Test Structures VI. Future Directions Appendix ReferencesIndexContents of Other Volumes
