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VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
Language
Place of publication
Publishing group
Elsevier Science & Techn.
ISBN-13
978-1-4832-1777-2 (9781483217772)
Schweitzer Classification
¿List of ContributorsPrefaceChapter 1 GaAs Technology Perspective I. Introduction II. History of GaAs Technology Development III. Properties of GaAs and Related III-V Materials IV. Device Structures for Integrated Circuits V. New Materials and Devices VI. Summary ReferencesChapter 2 GaAs Material Preparation and Characterization I. Introduction II. Growth of GaAs Single Crystals III. Direct Ion Implantation IV. Substrate and Active Layer Characterization ReferencesChapter 3 GaAs Monolithic Microwave Integrated Circuits I. GaAs MMIC Overview II. Fundamentals of GaAs Microwave Device Technology III. GaAs MMIC Design Principles IV. GaAs MMIC Processing Techniques V. Examples of MMIC Technology VI. Applications of GaAs MMICs VII. Issues and Assessment ReferencesChapter 4 The Future Impact of GaAs Digital Integrated Circuits I. Introduction II. High-Speed GaAs Devices and Circuits III. LSI Limitations of Logic Gates IV. Design-Rule Effects on Speed Performance V. GaAs Digital IC Fabrication Technology VI. High-Speed Digital IC Technology Comparison ReferencesChapter 5 GaAs Bipolar Digital Integrated Circuits I. GaAs Bipolar Development: A Historical Perspective II. GaAs/AlGaAs Epitaxial Materials Preparation III. GaAs Heterojunction Bipolar Transistors IV. Heterojunction Bipolar Gate Array Technology V. Conclusions ReferencesChapter 6 The Selectively Doped Heterostructure Transistor: Materials, Devices, and Circuits I. Introduction II. Material Properties of SDHT Structures III. Discrete Devices IV. SDHT Circuit Implementations V. Conclusions ReferencesChapter 7 On-Wafer Measurement of Gigahertz Integrated Circuits I. Introduction II. Limitations of Conventional Low-Frequency Wafer Probes III. Low-Parasitic Hybrid MIC Technology Probes IV. High-Accuracy On-Wafer Measurements V. Conclusions ReferencesChapter 8 Packaging and Interconnection of GaAs Digital Integrated Circuits I. Introduction II. Signal Processing Applications Requiring Digital GaAs III. Design Issues for Digital GaAs IV. Packaging and Interconnect Technology Issues for High-Frequency GaAs Digital Integrated Circuits V. Electrical Problems Created in LCCCs and PWB Structures by Inductance in the Power and Ground Planes ReferencesChapter 9 GaAs VLSI Technology for High-Speed Computers I. Introduction II. GaAs Devices for High-Performance VLSI III. Self-Aligned GaAs MESFET Technology for VLSI IV. HEMT Technology for VLSI V. Application to High-Speed Computers VI. Summary ReferencesChapter 10 Military Applications of GaAs Integrated Circuits I. Introduction II. Functional Replication III. Microwave Analog Applications IV. Microwave Digital Applications V. Novel Applications VI. Applications Requiring Assorted ICs VII. Summary ReferencesChapter 11 Radiation Effects of GaAs Integrated Circuits I. Introduction II. Damage Mechanisms III. Degradation of Device Characteristics Due to Fast Neutron Exposure IV. Total Dose Effects of Ionizing Radiation V. Transient Response to Pulsed Ionizing Radiation VI. Modeling of Logic Upset in GaAs ICs VII. Single Event Upset VIII. Annealing Characteristics of Defects IX. Prospects for Radiation-Hardened GaAs ICs ReferencesIndexContents of Other Volumes